IXTK88N30P

IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH 88N30P IXTK 88N30P
IXTQ 88N30P IXTT 88N30P
Fig. 11. Capacitance
100
1000
10000
0 5 10 15 20 25 30 35 40
V
D S
- Volts
Capacitance - picoFarads
C
iss
C
oss
C
rss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160 180
Q
G
- nanoCoulombs
V
G S
- Volts
V
DS
= 150V
I
D
= 44A
I
G
= 10mA
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
40
80
120
160
200
240
280
0.4 0.6 0.8 1 1.2 1.4 1.6
V
S D
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 12. For w ar d-Bias
Safe Ope r ating Ar ea
1
10
100
1000
10 100 1000
V
D S
- Volts
I
D
- Amperes
100µs
1ms
DC
T
J
= 150ºC
T
C
= 25ºCR
DS(on)
Limit
10ms
25µs
Fig. 13. Maximum Transient Thermal Resistance
0.01
0.10
1.00
1 10 100 1000
Pulse Width - milliseconds
R
(th) J C
-
ºC / W
© 2006 IXYS All rights reserved
IXTH 88N30P IXTK 88N30P
IXTQ 88N30P IXTT 88N30P
TO-247 (IXTH) Outline
1 2 3
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Terminals:
1. Gate 2,4. Drain
3. Source
TO-3P (IXTQ) Outline
TO-268 (IXTT) Outline
Terminals:
1. Gate 2,4. Drain
3. Source
TO-264 (IXTK) Outline

IXTK88N30P

Mfr. #:
Manufacturer:
Littelfuse
Description:
MOSFET 88 Amps 300V 0.04 Rds
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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