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VND810SP13TR
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P21
P22-P24
P25-P27
VND810SP
Application inform
ation
Doc I
D 7377 R
ev 5
19/2
7
3.5
Maximum demagnetizati
on energy (V
CC
= 13.5 V)
Figure 26.
Maximum turn-off current versus load induct
ance
(1)
1.
Values are generated with R
L
= 0
Ω.
In case of repetitive pulses, T
jstart
(at beginning of each demagnetization) of every pulse must not exceed
the temperature specified above for curves B and C.
V
IN
, I
L
t
Demagne
tizati
on
Demagn
etizat
ion
Demagn
etizat
ion
A = s
ingle pul
se at
T
Jstar
t
= 150 °C
B= re
pet
iti
ve pul
se at T
Jstart
= 100 °C
C= repe
titive pu
lse at T
Jstart
= 125 °C
1
10
0,
01
0,
1
1
10
100
L(
m
H
)
I
LM
A
X
(
A
)
A
B
C
Obsolete Product(s) - Obsolete Product(s)
Package
and PCB ther
mal data
VND810SP
20/27
Doc ID 737
7 Rev 5
4
Package and PCB therm
al dat
a
4.1 PowerSO-1
0
thermal
dat
a
Figure 27.
PowerSO-10 PC board
(1)
1.
Layout condition of R
th
and Z
th
measurements (PC
B FR4 area = 58
mm
x 58 mm, PCB
thickness = 2 mm,
Cu thickness
= 35 µ
m, Copper ar
eas: from minimum
pad lay-out to
8 cm
2
).
Figure 28.
R
thj-amb
vs PCB copper area in open box free air condition
30
35
40
45
50
55
024
68
1
0
PCB Cu heatsink area (cm^2)
RT
Hj_amb (°
C/W)
Tj-T
amb=50°C
Obsolete Product(s) - Obsolete Product(s)
VND810
SP
Package an
d PCB ther
mal data
Doc I
D 7377 R
ev 5
21/2
7
Figure 29.
Thermal impedance junction ambient single pulse
Equation 1
:
pulse c
alculat
ion formu
la
Figure 30.
Thermal fitting model of a double channel HSD in PowerSO-10
0.1
1
10
100
1000
0.
0001
0.0
01
0.
01
0.
1
1
10
100
1000
Ti
m
e (
s
)
Z
T
H (°
C/
W
)
0.5 c
m
2
6 cm
2
Z
TH
δ
R
TH
δ
Z
THtp
1
δ
–
()
+
⋅
=
where
δ
t
p
T
⁄
=
T_amb
Pd1
C1
R4
C3
C4
R3
R1
R6
R5
R2
C5
C6
C2
Pd2
R2
C1
C2
R1
Tj_1
Tj_2
Obsolete Product(s) - Obsolete Product(s)
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P21
P22-P24
P25-P27
VND810SP13TR
Mfr. #:
Buy VND810SP13TR
Manufacturer:
STMicroelectronics
Description:
Gate Drivers Double Ch High Side
Lifecycle:
New from this manufacturer.
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