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A2T21H140-24SR3

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
A2T21H140--24SR3
1
RF Device Data
NXP Semiconductors
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 36 W asymmetrical Doherty RF power LDMOS trans istor is designed
for cellular base station applications covering the frequenc y range of 2110 to
2170 MHz.
2100 MHz
Typical Doherty Single--Carrier W--CDMA Performance: V
DD
=28Vdc,
I
DQA
= 350 mA, V
GSB
=0.5Vdc,P
out
= 36 W Avg., Input Signal PAR =
9.9 dB @ 0.01% Probability on CCDF.
Frequency
G
ps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
2110 MHz 17.4 53.1 6.9 –30.2
2140 MHz 17.5 53.3 6.8 –31.4
2170 MHz 17.5 53.0 6.7 –32.1
Features
Advanced high performance in--package Doherty
Greater negative gate--source voltage range for improved Class C operation
Designed for digital predistortion error correction systems
Document Number: A2T21H140--24S
Rev. 0, 03/2017
NXP Semiconductors
Technical Data
2110–2170 MHz, 36 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTOR
A2T21H140--24SR3
NI--780S--4L2L
(Top View)
RF
outA
/V
DSA
RF
outB
/V
DSB
RF
inA
/V
GSA
RF
inB
/V
GSB
6
3
15
24
Carrier
Peaking
Figure 1. Pin Connections
VBW
B
(1)
1. Device cannot operate with V
DD
current
supplied through pin 3 and pin 6.
VBW
A
(1)
2017 NXP B.V.
2
RF Device Data
NXP Semiconductors
A2T21H140--24SR3
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage V
DSS
–0.5, +65 Vdc
Gate--Source Voltage V
GS
–6.0, +10 Vdc
Operating Voltage V
DD
32, +0 Vdc
Storage Temperature Range T
stg
–65 to +150 C
Case Operating Temperature Range T
C
–40 to +150 C
Operating Junction Temperature Range
(1,2)
T
J
–40 to +225 C
Table 2. Thermal Characteristics
Characteristic Symbol Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 77C, 36 W Avg., W--CDMA, 28 Vdc, I
DQA
= 350 mA,
V
GSB
= 0.5 Vdc, 2140 MHz
R
JC
0.45 C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2
Charge Device Model (per JESD22--C101) C2
Table 4. Electrical Characteristics (T
A
=25C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Off Characteristics
(4)
Zero Gate Voltage Drain Leakage Current
(V
DS
=65Vdc,V
GS
=0Vdc)
I
DSS
— — 10 Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
=32Vdc,V
GS
=0Vdc)
I
DSS
— — 1 Adc
Gate--Source Leakage Current
(V
GS
=5Vdc,V
DS
=0Vdc)
I
GSS
— — 1 Adc
On Characteristics -- Side A
(4)
Gate Threshold Voltage
(V
DS
=10Vdc,I
D
=70Adc)
V
GS(th)
0.8 1.2 1.6 Vdc
Gate Quiescent Voltage
(V
DD
=28Vdc,I
DA
= 350 mAdc, Measured in Functional Test)
V
GSA(Q)
1.4 1.8 2.2 Vdc
Drain--Source On--Voltage
(V
GS
=10Vdc,I
D
=0.7Adc)
V
DS(on)
0.1 0.2 0.3 Vdc
On Characteristics -- Side B
(4)
Gate Threshold Voltage
(V
DS
=10Vdc,I
D
= 100 Adc)
V
GS(th)
0.8 1.2 1.6 Vdc
Drain--Source On--Voltage
(V
GS
=10Vdc,I
D
=1.0Adc)
V
DS(on)
0.1 0.2 0.3 Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com/RF/calculators
.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF
and search for A N1955.
4. Each side of device measured separately.
(continued)
A2T21H140--24SR3
3
RF Device Data
NXP Semiconductors
Table 4. Electrical Characteristics
(T
A
=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Functional Tests
(1,2)
(In NXP Doherty Test Fixture, 50 ohm system) V
DD
=28Vdc,I
DQA
= 350 mA, V
GSB
=0.5Vdc,P
out
=36WAvg.,
f = 2110 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured
in 3.84 MHz Channel Bandwidth @ 5MHzOffset.
Power Gain
G
ps
16.7 17.4 19.7 dB
Drain Efficiency
D
50.1 53.1 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 6.4 6.9 — dB
Adjacent Channel Power Ratio ACPR — –30.2 –26.6 dBc
Load Mismatch
(2)
(In NXP Doherty Test Fixture, 50 ohm system) I
DQA
= 350 mA, V
GSB
= 0.5 Vdc, f = 2140 MHz
VSWR 10:1 at 32 V dc, 200 W CW Output Power
(3 dB Input Overdrive from 120 W CW Rated Power)
No Device Degradation
Typical Performance
(2)
(In NXP Doherty Test Fixture, 50 ohm system) V
DD
=28Vdc,I
DQA
= 350 mA, V
GSB
= 0.5 Vdc, 2110–2170 MHz
Bandwidth
P
out
@ 3 dB Compression Point
(3)
P3dB — 169 — W
AM/PM
(Maximum value measured at the P3dB compression point across
the 2110–2170 MHz bandwidth)
— –23 —
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBW
res
— 140 — MHz
Gain Flatness in 60 MHz Bandwidth @ P
out
=36WAvg. G
F
— 0.18 — dB
Gain Variation over Temperature
(–30Cto+85C)
G — 0.008 — dB/C
Output Power Variation over Temperature
(–30Cto+85C)
P1dB — 0.004 — dB/C
Table 5. Ordering Information
Device Tape and Reel Information Package
A2T21H140--24SR3 R3 Suffix = 250 Units, 44 mm Tape Width, 13--inch Reel NI--780S--4L2L
1. Part internally matched both on input and output.
2. Measurements made with device in an asymmetrical Doherty configuration.
3. P3dB = P
avg
+ 7.0 dB where P
avg
is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

A2T21H140-24SR3

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Buy A2T21H140-24SR3
Manufacturer:
NXP Semiconductors
Description:
RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2170 MHz, 36 W Avg., 28 V
Lifecycle:
New from this manufacturer.
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