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A2T21H140-24SR3

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
10
RF Device Data
NXP Semiconductors
A2T21H140--24SR3
Table 9. Peaking Side Load Pull Performance — Maximum Power Tuning
V
DD
=28Vdc,V
GSB
= 0.5 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Z
source
()
Z
in
()
Max Output Power
P1dB
Z
load
(1)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2110 10.2 – j17.7 11.6 + j18.7 5.96 – j12.8 14.5 50.5 113 56.5 –29
2140 13.9 – j18.3 16.0 + j19.0 6.26 – j13.0 14.5 50.5 112 56.8 –30
2170 19.5 – j16.1 21.7 + j17.2 6.42 – j13.3 14.4 50.5 113 57.2 –30
f
(MHz)
Z
source
()
Z
in
()
Max Output Power
P3dB
Z
load
(2)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2110 10.2 – j17.7 13.8 + j19.4 6.34 – j13.6 12.4 51.3 134 58.1 –36
2140 13.9 – j18.3 19.3 + j18.8 6.62 – j13.9 12.4 51.2 132 57.6 –37
2170 19.5 – j16.1 25.4 + j14.9 6.85 – j14.3 12.3 51.2 132 57.8 –37
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Z
source
= Measured impedance presented to the input of the device at the package reference plane.
Z
in
= Impedance as measured from gate contact to ground.
Z
load
= Measured impedance presented to the output of the device at the package reference plane.
Table 10. Peaking Side Load Pull Performance — Maximum Efficiency Tuning
V
DD
=28Vdc,V
GSB
= 0.5 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Z
source
()
Z
in
()
Max Drain Efficiency
P1dB
Z
load
(1)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2110 10.2 – j17.7 9.39 + j20.4 11.1 – j5.75 16.0 48.6 73 70.2 –34
2140 13.9 – j18.3 13.5 + j22.1 10.3 – j4.94 15.9 48.4 68 70.0 –36
2170 19.5 – j16.1 20.4 + j21.8 9.59 – j6.35 15.7 48.8 75 70.0 –36
f
(MHz)
Z
source
()
Z
in
()
Max Drain Efficiency
P3dB
Z
load
(2)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2110 10.2 – j17.7 12.2 + j21.0 11.6 – j8.27 13.9 49.8 95 69.7 –42
2140 13.9 – j18.3 17.9 + j21.8 11.2 – j7.51 13.8 49.6 91 69.3 –44
2170 19.5 – j16.1 25.6 + j19.4 10.4 – j7.20 13.7 49.5 89 69.4 –45
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Z
source
= Measured impedance presented to the input of the device at the package reference plane.
Z
in
= Impedance as measured from gate contact to ground.
Z
load
= Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
source
Z
in
Z
load
Output Load Pull
Tuner and Test
Circuit
A2T21H140--24SR3
11
RF Device Data
NXP Semiconductors
P1dB – TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 2140 MHz
IMAGINARY ()
4
68 16
2
REAL ()
–
2
10
–4
–6
–8
–10
–12
–14
–16
12 14
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 16. P1dB Load Pull Output Power Contours (dBm) Figure 17. P1dB Load Pull Efficiency Contours (%)
Figure 18. P1dB Load Pull Gain Contours (dB)
Figure 19. P1dB Load Pull AM/PM Contours ()
IMAGINARY ()
4
68 16
2
REAL ()
–
2
10
–4
–6
–8
–10
–12
–14
–16
12 14
IMAGINARY ()
4
68 16
2
REAL ()
–2
10
–4
–6
–8
–10
–12
–14
–16
12 14
IMAGINARY ()
4
68 16
2
REAL ()
–2
10
–4
–6
–8
–10
–12
–14
–16
12 14
E
47.5
49
46.5
48
47
48.5
49.5
50
P
48
49
E
P
56
68
62
64
54
66
58
60
P
E
15
14.5
14
12
13.5
13
15.5
P
E
–44
–30
–42
–40
–38
–36
–34
–32
12
RF Device Data
NXP Semiconductors
A2T21H140--24SR3
P3dB – TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 2140 MHz
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 20. P3dB Load Pull Output Power Contours (dBm) Figure 21. P3dB Load Pull Efficiency Contours (%)
Figure 22. P3dB Load Pull Gain Contours (dB)
Figure 23. P3dB Load Pull AM/PM Contours ()
IMAGINARY ()
4
68 16
2
REAL ()
–
2
10
–4
–6
–8
–10
–12
–14
–16
12 14
IMAGINARY ()
4
68 16
2
REAL ()
–
2
–4
–6
–8
–10
–12
–14
–16
12 14
IMAGINARY ()
4
68 16
2
REAL ()
–
2
10
–4
–6
–8
–10
–12
–14
–16
12 14
IMAGINARY ()
4
68 16
2
REAL ()
–2
10
–4
–6
–8
–10
–12
–14
–16
12 14
IMAGINARY ()
4
68 16
2
REAL ()
–2
10
–4
–6
–8
–10
–12
–14
–16
12 14
48
49.5
50.5
47
P
E
50
49
51
48.5
47.5
64
56
66
62
58
54
P
E
68
12.5
13
12
P
E
11
10
13.5
11.5
–46
–44
P
E
–40
–42
–52
–50
–48
–38
–36
60
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

A2T21H140-24SR3

Mfr. #:
Buy A2T21H140-24SR3
Manufacturer:
NXP Semiconductors
Description:
RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2170 MHz, 36 W Avg., 28 V
Lifecycle:
New from this manufacturer.
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