MT41K1G4THD-15E:D Datasheet MT41K1G4THD-15E:D, MT41K1G4THV-15E:M, MT41K512M8THD-15E:D | P10-P12

Electrical Specifications – I

CDD

Parameters

Table 7: DDR3L I

CDD

Specifications and Conditions (Rev D)

Note 1 applies to the entire table

Combined

Symbol

Individual

Die Status

Bus

Width -187E -15E Units

I

CDD0

I

CDD0

=

I

DD0

+ I

DD2P0

+ 5

x4, x8 92 102 mA

I

CDD1

I

CDD1

=

I

DD1

+ I

DD2P0

+ 5

x4, x8 112 117 mA

I

CDD2P0

(slow exit) I

CDD2P0

=

I

DD2P0

+ I

DD2P0

x4, x8 24 24 mA

I

CDD2P1

(fast exit) I

CDD2P1

=

I

DD2P1

+ I

DD2P0

x4, x8 37 42 mA

I

CDD2Q

I

CDD2Q

=

I

DD2Q

+ I

DD2P0

x4, x8 42 47 mA

I

CDD2N

I

CDD2N

=

I

DD2N

+ I

DD2P0

x4, x8 44 49 mA

I

CDD2N T

I

CDD2NT

=

I

DD2NT

+ I

DD2P0

x4, x8 52 57 mA

I

CDD3P

I

CDD3P

= I

DD3P

+ I

DD2P0

x4, x8 42 47 mA

I

CDD3N

I

CDD3N

=

I

DD3N

+ I

DD2P0

x4, x8 47 52 mA

I

CDD4R

I

CDD4R

=

I

DD4R

+ I

DD2P0

+ 5

x4 142 162 mA

x8 157 177

I

CDD4W

I

CDD4W

=

I

DD4W

+ I

DD2P0

+ 5

x4 152 172 mA

x8 162 182

I

CDD5B

I

CDD5B

=

I

DD5B

+ I

DD2P0

x4, x8 202 212 mA

I

CDD6

I

CDD6

=

I

DD6

+ I

DD6

x4, x8 24 24 mA

I

CDD6ET

I

CDD6ET

=

I

DD6ET

+ I

DD6ET

x4, x8 30 30 mA

I

CDD7

I

CDD7

=

I

DD7

+ I

DD2P0

+ 5

x4, x8 352 402 mA

I

CDD8

I

CDD8

= 2 × I

DD2P0

+ 4 x4, x8 32 32 mA

Note:

1. I

CDD

values reflect the combined current of both individual die. I

DDx

represents individu-

al die values.

Preliminary

4Gb: x4, x8 1.35V TwinDie DDR3L SDRAM

Electrical Specifications – I

CDD

Parameters

PDF: 09005aef8460911b

DDR3L_4Gb_1_35V_TwinDie.pdf - Rev. B 4/11 EN

10

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Table 8: DDR3L I

CDD

Specifications and Conditions (Rev M)

Note 1 applies to the entire table

Combined

Symbol

Individual

Die Status

Bus

Width -15E -125 Units

I

CDD0

I

CDD0

=

I

DD0

+ I

DD2P0

x4, x8 67 72 mA

I

CDD1

I

CDD1

=

I

DD1

+ I

DD2P0

x4, x8 82 87 mA

I

CDD2P0

(slow exit) I

CDD2P0

=

I

DD2P0

+ I

DD2P0

x4, x8 24 24 mA

I

CDD2P1

(fast exit) I

CDD2P1

=

I

DD2P1

+ I

DD2P0

x4, x8 40 45 mA

I

CDD2Q

I

CDD2Q

=

I

DD2Q

+ I

DD2P0

x4, x8 40 45 mA

I

CDD2N

I

CDD2N

=

I

DD2N

+ I

DD2P0

x4, x8 42 47 mA

I

CDD2N T

I

CDD2NT

=

I

DD2NT

+ I

DD2P0

x4, x8 47 52 mA

I

CDD3P

I

CDD3P

= I

DD3P

+ I

DD2P0

x4, x8 54 59 mA

I

CDD3N

I

CDD3N

=

I

DD3N

+ I

DD2P0

x4, x8 59 64 mA

I

CDD4R

I

CDD4RCDD4R

=

I

DD4R

+ I

DD2P0

x4 122 137 mA

x8 137 152

I

CDD4W

I

CDD4W

=

I

DD4W

+ I

DD2P0

x4 112 127 mA

x8 122 137

I

CDD5B

I

CDD5B

=

I

DD5B

+ I

DD2P0

x4, x8 197 202 mA

I

CDD6

I

CDD6

=

I

DD6

+ I

DD6

x4, x8 24 24 mA

I

CDD6ET

I

CDD6ET

=

I

DD6ET

+ I

DD6ET

x4, x8 30 30 mA

I

CDD7

I

CDD7

=

I

DD7

+ I

DD2P0

x4, x8 217 232 mA

I

CDD8

I

CDD8

= 2 × I

DD2P0

+ 4 x4, x8 28 28 mA

Note:

1. I

CDD

values reflect the combined current of both individual die. I

DDx

represents individu-

al die values.

Preliminary

4Gb: x4, x8 1.35V TwinDie DDR3L SDRAM

Electrical Specifications – I

CDD

Parameters

PDF: 09005aef8460911b

DDR3L_4Gb_1_35V_TwinDie.pdf - Rev. B 4/11 EN

11

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Package Dimensions

Figure 5: 78-Ball FBGA (package code THD)

Ball A1 ID

Seating

plane

0.12

A

0.85 ±0.1

1.2 MAX

0.25 MIN

9 ±0.15

Ball A1 ID

9.6 CTR

Solder ball

material: SAC305.

Dimensions apply

to solder balls post-

reflow on Ø0.33

NSMD ball pads.

78X Ø0.45

11.5 ±0.15

0.8 TYP

6.4 CTR

9 8 7 3 2 1

A

B

C

D

E

F

G

H

J

K

L

M

N

Notes:

1. All dimensions are in millimeters.

2. Solder ball material: SAC305 (96.5% Sn, 3% Ag, 0.5% Cu).

Preliminary

4Gb: x4, x8 1.35V TwinDie DDR3L SDRAM

Package Dimensions

PDF: 09005aef8460911b

DDR3L_4Gb_1_35V_TwinDie.pdf - Rev. B 4/11 EN

12

Micron Technology, Inc. reserves the right to change products or specifications without notice.

MT41K1G4THD-15E:D

MT41K1G4THD-15E:D

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