IXYK100N65B3D1 Datasheet IXYK100N65B3D1, IXYX100N65B3D1 | P1-P3

XPT

TM

650V IGBT

GenX3

TM

w/ Diode

IXYK100N65B3D1

IXYX100N65B3D1

V

CES

= 650V

I

C110

= 100A

V

CE(sat)



 1.85V

t

fi(typ)

= 73ns

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 175°C 650 V

V

CGR

T

J

= 25°C to 175°C, R

GE

= 1M 650 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

T

C

= 25°C (Chip Capability) 225 A

I

LRMS

Terminal Current Limit 160 A

I

C110

T

C

= 110°C 100 A

I

F110

T

C

= 110°C 67 A

I

CM

T

C

= 25°C, 1ms 460 A

I

A

T

C

= 25°C 50 A

E

AS

T

C

= 25°C 600 mJ

SSOA V

GE

= 15V, T

VJ

= 150°C, R

G

= 3 I

CM

= 200 A

(RBSOA) Clamped Inductive Load @V

CE

 V

CES

t

sc

V

GE

= 15V, V

CE

= 360V, T

J

= 150°C 8 μs

(SCSOA) R

G

= 10, Non Repetitive

P

C

T

C

= 25°C 830 W

T

J

-55 ... +175 °C

T

JM

175 °C

T

stg

-55 ... +175 °C

T

L

Maximum Lead Temperature for Soldering 300 °C

T

SOLD

1.6 mm (0.062in.) from Case for 10s 260 °C

M

d

Mounting Torque (TO-264) 1.13/10 Nm/lb.in

F

C

Mounting Force (PLUS247) 20..120 /4.5..27 N/lb

Weight TO-264 10 g

PLUS247 6 g

DS100633(10/14)

Extreme Light Punch Through

IGBT for 10-30kHz Switching

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

BV

CES

I

C

= 250μA, V

GE

= 0V 650 V

V

GE(th)

I

C

= 250μA, V

CE

= V

GE

3.5 6.0 V

I

CES

V

CE

= V

CES

,

V

GE

= 0V 50 μA

T

J

= 150°C 3 mA

I

GES

V

CE

= 0V, V

GE

= ±20V ±100 nA

V

CE(sat)

I

C

= 70A, V

GE

= 15V, Note 1 1.53 1.85 V

T

J

= 150°C 1.77 V

Features



International Standard Packages



Optimized for 10-30kHz Switching



Square RBSOA



Avalanche Rated



Short Circuit Capability



Anti-Parallel Ultra Fast Diode



High Current Handling Capability

Advantages



High Power Density



Low Gate Drive Requirement

Applications



Power Inverters



UPS



Motor Drives



SMPS



PFC Circuits



Battery Chargers



Welding Machines



Lamp Ballasts

G = Gate E = Emitter

C = Collector Tab = Collector

TO-264 (IXYK)

E

G

C

PLUS247 (IXYX)

G

Tab

E

C

G

Advance Technical Information

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYK100N65B3D1

IXYX100N65B3D1

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

g

fs

I

C

= 60A, V

CE

= 10V, Note 1 30 55 S

C

ies

4740 pF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 470 pF

C

res

103 pF

Q

g(on)

168 nC

Q

ge

I

C

= 100A, V

GE

= 15V, V

CE

= 0.5 • V

CES

30 nC

Q

gc

78 nC

t

d(on)

29 ns

t

ri

37 ns

E

on

1.27 mJ

t

d(off)

150 ns

t

fi

73 ns

E

off

1.37 2.00 mJ

t

d(on)

28 ns

t

ri

37 ns

E

on

2.35 mJ

t

d(off)

198 ns

t

fi

160 ns

E

off

2.16 mJ

R

thJC

0.18 °C/W

R

thCS

0.15 °C/W

Notes:

1. Pulse test, t  300μs, duty cycle, d  2%.

2. Switching times & energy losses may increase for higher V

CE

(clamp), T

J

or R

G

.

Inductive load, T

J

= 150°C

I

C

= 50A, V

GE

= 15V

V

CE

= 400V, R

G

= 3

Note 2

Reverse Diode (FRED)

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

V

F

I

F

= 100A, V

GE

= 0V, Note 1 1.7 2.7 V

T

J

= 150C 1.4 V

I

RM

45 A

t

rr

156 ns

R

thJC

0.36 C/W

I

F

= 100A, V

GE

= 0V, T

J

= 150C,

-di

F

/dt = 700A/sV

R

= 400V

Inductive load, T

J

= 25°C

I

C

= 50A, V

GE

= 15V

V

CE

= 400V, R

G

= 3

Note 2

TO-264 Outline

Terminals: 1 = Gate

2,4 = Collector

3 = Emitter

Terminals: 1 - Gate

2 - Collector

3 - Emitter

PLUS247

TM

Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.83 5.21 .190 .205

A

1

2.29 2.54 .090 .100

A

2

1.91 2.16 .075 .085

b 1.14 1.40 .045 .055

b

1

1.91 2.13 .075 .084

b

2

2.92 3.12 .115 .123

C 0.61 0.80 .024 .031

D 20.80 21.34 .819 .840

E 15.75 16.13 .620 .635

e 5.45 BSC .215 BSC

L 19.81 20.32 .780 .800

L1 3.81 4.32 .150 .170

Q 5.59 6.20 .220 0.244

R 4.32 4.83 .170 .190

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

IXYK100N65B3D1

IXYX100N65B3D1

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

20

40

60

80

100

120

140

0 0.5 1 1.5 2 2.5 3

V

CE

- Volts

I

C

(A)

V

GE

= 15V

13V

12V

11V

10V

9V

7V

8V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

50

100

150

200

250

300

024681012141618

V

CE

- Volts

I

C

(A)

V

GE

= 15V

13V

10V

11V

8V

9V

7V

12V

Fig. 3. Output Characteristics @ T

J

= 150ºC

0

20

40

60

80

100

120

140

0 0.5 1 1.5 2 2.5 3 3.5

V

CE

- Volts

I

C

(A)

V

GE

= 15V

13V

12V

11V

10V

8V

9V

7V

6V

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 70A

I

C

= 35A

I

C

= 140A

Fig. 5. Collector-to-Emitter Voltage vs.

Gate-to-Emitter Voltage

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

7 8 9 101112131415

V

GE

(V)

V

CE

(V)

I

C

= 140A

T

J

= 25ºC

70A

35A

Fig. 6. Input Admittance

0

20

40

60

80

100

120

140

160

45678910

V

GE

(V)

I

C

(A)

T

J

= 150ºC

25ºC

- 40ºC

IXYK100N65B3D1

IXYK100N65B3D1

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