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IXYK100N65B3D1

P1-P3P4-P6P7-P7
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYK100N65B3D1
IXYX100N65B3D1
Fig. 7. Transconductance
0
10
20
30
40
50
60
70
80
90
0 20406080100120140160
I
C
(A)
g
f s
(S)
T
J
= - 40ºC
25ºC
150ºC
Fig. 10. Reverse-Bias Safe Operating Area
0
40
80
120
160
200
100 200 300 400 500 600 700
V
CE
(V)
I
C
(A)
T
J
= 150ºC
R
G
= 3
dv / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 20 40 60 80 100 120 140 160 180
Q
G
(nC)
V
GE
(V)
V
CE
= 325V
I
C
= 70A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
(V)
Capacitance (pF
)
f
= 1 MH
z
C
ies
C
oes
C
res
Fig. 12. Maximum Transient Thermal Impedance (IGBT)
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width (s)
Z
(th)JC
- ºC / W
Fig. 11. Forward-Bias Safe Operating Area
0.1
1
10
100
1000
1 10 100 1000
V
DS
(V)
I
D
(A)
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
DC
V
CE(sat)
Limi
t
100µs
10ms
© 2014 IXYS CORPORATION, All Rights Reserved
IXYK100N65B3D1
IXYX100N65B3D1
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
0
1
2
3
4
5
6
7
3 6 9 1215182124273033
R
G
()
E
off
(mJ)
0
2
4
6
8
10
12
14
E
on
(mJ)
E
off
E
on
- - - -
T
J
= 150ºC , V
GE
= 15V
V
CE
= 400V
I
C
= 50A
I
C
= 100A
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
80
100
120
140
160
180
200
220
240
3 6 9 1215182124273033
R
G
()
t
f i
(ns)
0
100
200
300
400
500
600
700
800
t
d(off)
(ns)
t
f i
t
d(off)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 400V
I
C
= 100A
I
C
= 50A
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
0
1
2
3
4
5
6
7
50 55 60 65 70 75 80 85 90 95 100
I
C
(A)
E
off
(mJ)
0
1
2
3
4
5
6
7
E
on
(mJ)
E
off
E
on
- - - -
R
G
= 3
,
V
GE
= 15V
V
CE
= 400V
T
J
= 150ºC
T
J
= 25ºC
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
0
1
2
3
4
5
6
7
25 50 75 100 125 150
T
J
(ºC)
E
off
(mJ)
0
1
2
3
4
5
6
7
E
on
(mJ)
E
off
E
on
- - - -
R
G
= 3
,
V
GE
= 15V
V
CE
= 400V
I
C
= 50A
I
C
= 100A
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
40
60
80
100
120
140
160
180
200
220
50 55 60 65 70 75 80 85 90 95 100
I
C
(A)
t
f i
(ns)
120
130
140
150
160
170
180
190
200
210
t
d(off)
(ns)
t
f i
t
d(off)
- - - -
R
G
= 3
, V
GE
= 15V
V
CE
= 400V
T
J
= 150ºC
T
J
= 25ºC
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
20
40
60
80
100
120
140
160
180
200
220
25 50 75 100 125 150
T
J
(ºC)
t
f i
(ns)
120
130
140
150
160
170
180
190
200
210
220
t
d(off)
(ns)
t
f i
t
d(off)
- - - -
R
G
= 3
, V
GE
= 15V
V
CE
= 400V
I
C
= 100A
I
C
= 50A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYK100N65B3D1
IXYX100N65B3D1
Fig. 20. Inductive Turn-on Switching Times vs.
Collector Current
20
40
60
80
100
120
140
50 55 60 65 70 75 80 85 90 95 100
I
C
(A)
t
r i
(ns)
26
28
30
32
34
36
38
t
d(on)
(ns)
t
r i
t
d(on)
- - - -
R
G
= 3
, V
GE
= 15V
V
CE
= 400V
T
J
= 25ºC
T
J
= 150ºC
Fig. 21. Inductive Turn-on Switching Times vs.
Junction Temperature
0
20
40
60
80
100
120
140
160
25 50 75 100 125 150
T
J
(ºC)
t
r i
(ns)
24
26
28
30
32
34
36
38
40
t
d(on)
(ns)
t
r i
t
d(on)
- - - -
R
G
= 3
, V
GE
= 15V
V
CE
= 400V
I
C
= 100A
I
C
= 50A
Fig. 19. Inductive Turn-on Switching Times vs.
Gate Resistance
0
40
80
120
160
200
240
3 6 9 1215182124273033
R
G
()
t
r i
(ns)
0
30
60
90
120
150
180
t
d(on)
(ns)
t
r i
t
d(on)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 400V
I
C
= 50A
I
C
= 100A
Fig. 22. Maximum Peak Load Current vs. Frequency
0
10
20
30
40
50
60
70
80
90
100
10 100 1,000
f
max
(kH)
I
C
(A)
T
J
= 150ºC
T
C
= 75ºC
V
CE
= 400V
V
GE
= 15V
R
G
= 3
D = 0.5
Square Wave
Triangular Wave
P1-P3P4-P6P7-P7

IXYK100N65B3D1

Mfr. #:
Buy IXYK100N65B3D1
Manufacturer:
Littelfuse
Description:
IGBT Transistors DISC IGBT XPT-GENX3
Lifecycle:
New from this manufacturer.
Delivery:
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