© 2014 IXYS CORPORATION, All Rights Reserved
IXYS REF: IXY_100N65B3(7D-Y42) 10-14-14
IXYK100N65B3D1
IXYX100N65B3D1
Fig. 23. Diode Forward Characteristics
0
20
40
60
80
100
120
140
160
180
200
00.511.522.53
V
F
(V)
I
F
(A)
T
J
= 150ºC
T
J
= 25ºC
Fig. 24. Reverse Recovery Charge vs. -di
F
/dt
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
200 300 400 500 600 700 800 900 1000
-di
F
/ dt (A/µs)
Q
RR
(µC)
50A
75A
I
F
= 100A
T
J
= 150ºC
V
R
= 400V
Fig. 25. Reverse Recovery Current vs. -di
F
/dt
15
20
25
30
35
40
45
50
200 300 400 500 600 700 800 900 1000
di
F
/dt (A/µs)
I
RR
(A)
I
F
= 100A
50A
75A
T
J
= 150ºC
V
R
= 400V
Fig. 26. Reverse Recovery Time vs. -di
F
/dt
130
140
150
160
170
180
190
200
210
200 300 400 500 600 700 800 900 1000
-di
F
/dt (A/µs)
t
RR
(ns)
I
F
= 100A
75A
50A
T
J
= 150ºC
V
R
= 400V
Fig. 28. Maximum Transient Thermal Impedance (Diode)
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Z
(th)JC
(ºC / W)
Fig. 27. Dynamic Parameters Q
RR,
I
RR
vs.
Junction Temperature
0
0.2
0.4
0.6
0.8
1
1.2
0 20 40 60 80 100 120 140 160
T
J
(ºC)
K
F
K
F
I
RR
K
F
Q
RR
V
R
= 400V
I
F
= 100A
-dI
F
/dt = 700A/µs
