Philips Semiconductors
PHM21NQ15T
TrenchMOS™ standard level FET
Product data Rev. 02 — 11 September 2003 2 of 13
9397 750 11844
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
3. Ordering information
4. Limiting values
[1] Duty cycle limited by maximum junction temperature.
[2] Repetitive avalanche failure is not determined simply by thermal effects. Repetitive avalanche transients should only be applied for short
bursts, not every switching cycle.
Table 2: Ordering information
Type number Package
Name Description Version
PHM21NQ15T QLPAK Plastic surface mounted package; no leads; 8 terminals SOT685
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage (DC) 25 °C ≤ T
j
≤ 150 °C - 150 V
V
DGR
drain-gate voltage (DC) 25 °C ≤ T
j
≤ 150 °C; R
GS
=20kΩ - 150 V
V
GS
gate-source voltage (DC) - ±20 V
I
D
drain current (DC) T
mb
=25°C; V
GS
=10V;Figure 2 and 3 - 22.2 A
T
mb
= 100 °C; V
GS
=10V;Figure 2 -14A
I
DM
peak drain current T
mb
=25°C; pulsed; t
p
≤ 10 µs; Figure 3 -60A
P
tot
total power dissipation T
mb
=25°C; Figure 1 - 62.5 W
T
stg
storage temperature −55 +150 °C
T
j
junction temperature −55 +150 °C
Source-drain diode
I
S
source (diode forward) current (DC) T
mb
=25°C - 22.2 A
I
SM
peak source (diode forward) current T
mb
=25°C; pulsed; t
p
≤ 10 µs - 60 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
unclamped inductive load; I
D
=12A;
t
p
= 0.21 ms; V
DD
≤ 150 V; R
GS
=50Ω;
V
GS
= 10 V; starting T
j
=25°C
- 250 mJ
E
DS(AL)R
repetitive drain-source avalanche
energy
unclamped inductive load;
I
D
= 1.2 A; t
p
= 0.021 ms; V
DD
≤ 100 V;
R
GS
=50Ω; V
GS
=10V
[1]
[2]
- 2.5 mJ
