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PHM21NQ15T,518
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
Philips Semiconductors
PHM21NQ15T
T
renchMOS™ standard level FET
Product data
Rev
. 02 — 11 September 2003
7 of 13
9397 750 11844
© Koninklijk
e Philips Electronics N.V
. 2003. All r
ights reserved.
I
D
= 1 mA; V
DS
=V
GS
T
j
=2
5
°
C
Fig 9.
Gate-source threshold v
oltage as a function of
junction temperature.
Fig 10.
Sub-threshold drain current as a function of
gate-source v
oltage.
V
GS
= 0 V
; f = 1 MHz
Fig 11.
Input, output and rever
se transfer capacitances as a function of drain-source v
oltage; typical values.
03aa32
0
1
2
3
4
5
-60
0
60
120
180
T
j
(
°
C)
V
GS
(th
)
(V
)
max
mi
n
typ
03aa35
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
02
46
V
GS
(V
)
I
D
(A
)
max
typ
mi
n
03al11
10
10
2
10
3
10
4
10
-1
1
10
10
2
V
DS
(V
)
C
(pF
)
C
iss
C
oss
C
rss
Philips Semiconductors
PHM21NQ15T
T
renchMOS™ standard level FET
Product data
Rev
. 02 — 11 September 2003
8 of 13
9397 750 11844
© Koninklijk
e Philips Electronics N.V
. 2003. All r
ights reserved.
T
j
=2
5
°
C and 150
°
C; V
GS
=0V
I
D
= 20 A; V
DD
= 30 V
, 75 V
, 120 V
Fig 12.
Source (diode f
orward) current as a function of
source-drain (diode f
orward) v
oltage; typical
values.
Fig 13.
Gate-source v
oltage as a function of gate
charge; typical v
alues.
03al10
0
20
40
60
00
.
511
.
5
V
SD
(V
)
I
S
(A
)
T
j
= 25
°
C
150
°
C
V
GS
= 0 V
03al12
0
2
4
6
8
10
0
1
02
0
3
04
0
Q
G
(nC)
V
GS
(V
)
I
D
= 20 A
T
j
= 25
°
C
V
DD
= 30 V
75 V
120 V
Philips Semiconductors
PHM21NQ15T
T
renchMOS™ standard level FET
Product data
Rev
. 02 — 11 September 2003
9 of 13
9397 750 11844
© Koninklijk
e Philips Electronics N.V
. 2003. All r
ights reserved.
7.
P
ac
kage outline
Fig 14.
SO
T685-1 (QLP
AK).
1.27
1
A
1
E
h
b
UNIT
y
e
0.2
c
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
mm
5.15
4.85
D
h
3.95
3.65
y
1
6.15
5.85
3.65
3.35
e
1
3.81
0.5
0.3
0.05
0.00
0.05
0.1
DIMENSIONS (mm are the original dimensions)
SOT685-1
- - -
0.75
0.50
L
0.1
v
0.05
w
0
2.5
5 mm
scale
SOT685-1
HVSON8: plastic thermal enhanced very thin small outline package; no leads;
8 terminals; body 6 x 5 x 0.85 mm
A
(1)
max.
A
A
1
c
detail X
y
y
1
C
e
L
E
h
e
h
D
h
exposed tie bar (4
×
)
e
1
b
14
8
5
X
D
E
C
B
A
terminal 1
index area
terminal 1
index area
02-08-12
02-11-27
A
C
C
B
v
M
w
M
e
h
0.35
E
(1)
D
(1)
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
PHM21NQ15T,518
Mfr. #:
Buy PHM21NQ15T,518
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 150V 22.2A 8HVSON
Lifecycle:
New from this manufacturer.
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