PDF: 09005aef80e5e752/Source: 09005aef80e5e626 Micron Technology, Inc., reserves the right to change products or specifications without notice.
HTF18C64_128_256x72.fm - Rev. E 3/07 EN
13 ©2003 Micron Technology, Inc. All rights reserved.
512MB, 1GB, 2GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMM
Register and PLL Specifications
Notes: 1. PLL timing and switching specifications are critical for proper operation of the DDR2 DIMM.
This is a subset of parameters for the specific PLL used. Detailed PLL information is available
in JEDEC standard JESD82.
Table 15: PLL Specifications
CU877 device or equivalent JESD82-8.01
Parameter Symbol Pins Condition Min Max Units
DC high-level input voltage
V
IH RESET# LVCMOS 0.65 × VDD –V
DC low-level input voltage
V
IL RESET# LVCMOS 0.35 × VDD V
Input voltage (limits)
V
IN RESET#, CK, CK# –0.3 VDDQ + 0.3 V
DC high-level input voltage
V
IH CK, CK# Differential input 0.65 × VDD –V
DC low-level input voltage
V
IL CK, CK# Differential input 0.35 × VDD mV
Input differential-pair cross
voltage
V
IX CK, CK# Differential input (VDDQ/2) -
0.15
(VDDQ/2) +
0.15
V
Input differential voltage
V
ID(DC) CK, CK# Differential input 0.3 VDDQ + 0.4 V
Input differential voltage
V
ID(AC) CK, CK# Differential input 0.6 VDDQ + 0.4 V
Input current
I
I RESET# VI = VDDQ or VSSQ –10 10 µA
CK, CK# VI = VDDQ or VSSQ –250 250 µA
Output disabled current
I
ODL RESET# = VSSQ; VI = VIH(AC) or
VIL(DC)
100 µA
Static supply current
I
DDLD CK = CK# = LOW 500 µA
Dynamic supply
I
DD n/a CK, CK# = 270 MHz, all
outputs open
(not connected to PCB)
–300mA
Input capacitance
C
IN Each input VI = VDDQ or VSSQ23pF
Table 16: PLL Clock Driver Timing Requirements and Switching Characteristics
Parameter Symbol Min Max Units
Stabilization time
t
L–15µs
Input clock slew rate
t
LS
I
1.0 4 V/ns
SSC modulation frequency
30 33 kHz
SSC clock input frequency deviation
0.0 –0.50 %
PLL loop bandwidth (–3dB from unity gain)
2.0 MHz
PDF: 09005aef80e5e752/Source: 09005aef80e5e626 Micron Technology, Inc., reserves the right to change products or specifications without notice.
HTF18C64_128_256x72.fm - Rev. E 3/07 EN
14 ©2003 Micron Technology, Inc. All rights reserved.
512MB, 1GB, 2GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMM
Serial Presence-Detect
Serial Presence-Detect
Notes: 1. To avoid spurious start and stop conditions, a minimum delay is placed between SCL = 1 and
the falling or rising edge of SDA.
2. This parameter is sampled.
3. For a restart condition, or following a WRITE cycle.
4. The SPD EEPROM WRITE cycle time (
t
WRC) is the time from a valid stop condition of a write
sequence to the end of the EEPROM internal ERASE/PROGRAM cycle. During the WRITE
cycle, the EEPROM bus interface circuit is disabled, SDA remains HIGH due to pull-up resis-
tance, and the EEPROM does not respond to its slave address.
Table 17: Serial Presence-Detect EEPROM DC Operating Conditions
All voltages referenced to VSS; VDDSPD = +1.7V to +3.6V
Parameter/Condition Symbol Min Max Units
Supply voltage
V
DDSPD 1.7 3.6 V
Input high voltage: Logic 1; All inputs
V
IH VDDSPD × 0.7 VDDSPD + 0.5 V
Input low voltage: Logic 0; All inputs
V
IL –0.6 VDDSPD × 0.3 V
Output low voltage: I
OUT = 3mA
V
OL –0.4V
Input leakage current: V
IN = GND to VDD
ILI 0.10 3 µA
Output leakage current: V
OUT = GND to VDD
ILO 0.05 3 µA
Standby current
I
SB 1.6 4 µA
Power supply current, READ: SCL clock frequency = 100 kHz
I
CC
R
0.4 1 mA
Power supply current, WRITE: SCL clock frequency = 100 kHz
I
CC
W
23mA
Table 18: Serial Presence-Detect EEPROM AC Operating Conditions
All voltages referenced to VSS; VDDSPD = +1.7V to +3.6V
Parameter/Condition Symbol Min Max Units Notes
SCL LOW to SDA data-out valid
t
AA 0.2 0.9 µs 1
Time the bus must be free before a new transition can start
t
BUF 1.3 µs
Data-out hold time
t
DH 200 ns
SDA and SCL fall time
t
F 300 ns 2
Data-in hold time
t
HD:DAT 0 µs
Start condition hold time
t
HD:STA 0.6 µs
Clock HIGH period
t
HIGH 0.6 µs
Noise suppression time constant at SCL, SDA inputs
t
I–50ns
Clock LOW period
t
LOW 1.3 µs
SDA and SCL rise time
t
R–0.3µs2
SCL clock frequency
f
SCL 400 kHz
Data-in setup time
t
SU:DAT 100 ns
Start condition setup time
t
SU:STA 0.6 µs 3
Stop condition setup time
t
SU:STO 0.6 µs
WRITE cycle time
t
WRC 10 ms 4
PDF: 09005aef80e5e752/Source: 09005aef80e5e626 Micron Technology, Inc., reserves the right to change products or specifications without notice.
HTF18C64_128_256x72.fm - Rev. E 3/07 EN
15 ©2003 Micron Technology, Inc. All rights reserved.
512MB, 1GB, 2GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMM
Serial Presence-Detect
Table 19: Serial Presence-Detect Matrix
Byte Description Entry (Version)
512MB
1
1GB 2GB
0
Number of SPD bytes used by Micron
128 80 80 80
1
Total number of bytes in SPD device
256 08 08 08
2
Fundamental memory type
DDR2 SDRAM 08 08 08
3
Number of row addresses on SDRAM
13, 14 0D 0E 0E
4
Number of column addresses on SDRAM
10 0B 0B 0B
5
DIMM height and module ranks
30mm, single rank
60 60 60
6
Module data width
72 48 48 48
7
Reserved
00000 00
8
Module voltage interface levels
SSTL 1.8V 05 05 05
9
SDRAM cycle time,
t
CK
(CL = MAX value, see byte 18)
-80E
-800
-667
-53E
-40E
3D
50
25
25
30
3D
50
25
25
30
3D
50
10
SDRAM access from clock,
t
AC
(CL = MAX value, see byte 18)
-80E/-800
-667
-53E
-40E
50
60
40
45
50
60
40
45
50
60
11
Module configuration type
ECC
ECC and parity
02
06
02
06
02
06
12
Refresh rate/type
7.81µs/SELF 82 82 82
13
SDRAM device width (primary SDRAM)
40404 04
14
Error-checking SDRAM data width
40404 04
15
Reserved
00000 00
16
Burst lengths supported
4, 8 0C 0C 0C
17
Number of banks on SDRAM device
4 or 8 04 04 08
18
CAS latencies supported
-80E (5, 4)
-800 (6, 5, 4)
-667 (5, 4, 3)
-53E/-40E (4, 3)
18
30
70
38
18
30
70
38
18
19
Module thickness
01 01 01
20
DDR2 DIMM type
Registered
DIMM
01 01 01
21
SDRAM module attributes
1 PLL, 2 Reg 05 05 05
22
SDRAM device attributes: weak driver
(01), or weak driver and 50Ω ODT (03)
-80E/-800/-667
-53E/-40E
01
03
01
03
01
23
SDRAM cycle time,
t
CK, MAX CL - 1
-80E/-667
-800
-53E/-40E
50
3D
30
50
3D
30
50
24
SDRAM access from CK,
t
AC, MAX CL - 1
-80E/-800
-667
-53E
-40E
50
60
40
45
50
60
40
45
50
60
25
SDRAM cycle time,
t
CK, MAX CL - 2
-80E/-800
-667
-53E/-40E
00
3D/00
50
00
3D/00
50
00
26
SDRAM access from CK,
t
AC, MAX CL - 2
-80E/-800
-667
-53E/-40E
00
40/00
45
00
40/00
45
00

MT18HTF6472Y-53EB2

Mfr. #:
Manufacturer:
Micron
Description:
MODULE DDR2 SDRAM 512MB 240RDIMM
Lifecycle:
New from this manufacturer.
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