1. General description
The BGS8324 is, also known as the WLAN3001H, a fully integrated Low-Noise Amplifier
(LNA) and SP3T switch for Bluetooth path and transmit path. For WLAN applications in
the 2.4 GHz to 2.5 GHz ISM band. The BGS8324 is manufactured using NXPs high
performance QUBiC eighth generation SiGe:C technology. The BGS8324 couples
best-in-class noise figure, linearity and low insertion loss CMOS switches with the process
stability and ruggedness that are the hallmarks of SiGe technology. The BGS8324 has a
2.0 mm 2.0 mm footprint HX2QFN12 package and a thickness of 300 m.
2. Features and benefits
Intended for IEEE 802.11b/g/n WLAN application
Covers full ISM low band 2400 MHz to 2500 MHz
Noise figure = 2 dB
Gain 16 dB
High input 1 dB compression point P
i(1dB)
of 6 dBm
High in band IP3
i
of 7 dBm
Supply voltage 2.7 V to 5.25 V
Stand-by mode current consumption at 8 A for 3.3 V supply voltage
Optimized performance at a low supply current of 8.3 mA
Integrated concurrent 5 GHz notch filter
5 modes of operation (standby, high gain receive, bypass receive, transmit and
Bluetooth modes)
Integrated matching for input and output
Requires only one supply decoupling capacitor
ElectroStatic Discharge
(ESD) protection on all pins (HBM > 2 kV)
Small 12-pin leadless package 2 mm 2 mm 0.3 mm; 0.5 mm pitch
3. Applications
IEEE 802.11b/g/n WiFi, WLAN
Smartphones, tablets, netbooks and other portable computing devices
Access points, routers, gateways
Wireless video
General-purpose Industrial, Scientific and Medical
(ISM) applications
BGS8324
WLAN LNA + Switch
Rev. 4 — 18 January 2017 Product data sheet
+
;
4
)
1
BGS8324 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2017. All rights reserved.
Product data sheet Rev. 4 — 18 January 2017 2 of 12
NXP Semiconductors
BGS8324
WLAN LNA + Switch
4. Quick reference data
[1] See Table 9 for the appropriate control signal settings.
5. Ordering information
6. Marking
Table 1. Quick reference data
V
CC
= 3.3 V; T
amb
= 25
C; 50
load, unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
RF performance at ANT-RX path in high-gain receive mode
[1]
I
CC
supply current high-gain receive mode
[1]
- 8.3 12.0 mA
G
tr
transducer power gain 13.7 16 18 dB
NF noise figure -2- dB
P
i(1dB)
input power at 1 dB gain compression in-band - 6- dBm
RL
in
input return loss - 12 - dB
RL
out
output return loss - 12 - dB
RF performance at ANT-RX path in bypass receive mode
[1]
I
CC
supply current bypass receive mode
[1]
-815A
G
tr
transducer power gain 9 6 4dB
RF performance at ANT-TX path in transmit mode
[1]
ins
insertion loss -0.8- dB
RF performance at ANT-BT path in Bluetooth mode
[1]
ins
insertion loss -0.95- dB
Table 2. Ordering information
Type number Package
Name Description Version
BGS8324 HX2QFN12 plastic, thermal enhanced super thin quad flat package; no leads; 12
terminals; body 2.0 x 2.0 x 0.3 mm
SOT1261-1
Type number Marking code
BGS8324 24
YWW: Year & Week code
BGS8324 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2017. All rights reserved.
Product data sheet Rev. 4 — 18 January 2017 3 of 12
NXP Semiconductors
BGS8324
WLAN LNA + Switch
7. Functional diagram
8. Pinning information
8.1 Pinning
8.2 Pin description
Fig 1. Functional diagram
DDD
9
7;
$17
7;
*1'
/1$
9
5;
9
%7
%7
9
&&
*1'
*1'
5;
/1$B(1
Fig 2. Pin configuration
DDD
7UDQVSDUHQWWRSYLHZ
%*6
WHUPLQDO
LQGH[DUHD
9
7;
7;

  
*1'
*1'
%7
9
&&
*1'
5;
/1$B(1
$17
9
5;
9
%7
Table 3. Pin description
Symbol Pin Description
V
TX
1 transmit mode control
TX 2 transmit input
GND 3, 4, 9, exposed die pad ground
RX 5 receive output

BGS8324Z

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
RF Amplifier BGS8324/HX2QFN12///REEL 7 Q2 NDP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet