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BGS8324Z

P1-P3P4-P6P7-P9P10-P12
BGS8324 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2017. All rights reserved.
Product data sheet Rev. 4 — 18 January 2017 4 of 12
NXP Semiconductors
BGS8324
WLAN LNA + Switch
9. Limiting values
[1] According to ANSI/ESDA/JEDEC standard JS-001.
[2] According to JEDEC standard JESD22-C101.
10. Recommended operating conditions
[1] V
IH
is the result of an input voltage on that specific pin between 1.8 V and V
CC
0.2 V and 3.6 V maximum.
LNA_EN 6 LNA enable
V
CC
7 supply voltage
BT 8 Bluetooth input / output
V
BT
10 Bluetooth mode control
V
RX
11 receive mode control
ANT 12 antenna input / output
Table 3. Pin description …continued
Symbol Pin Description
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage 0.3 6 V
I
CC
supply current worst case up to P1dB - 16 mA
V
I(VBT)
input voltage on pin VBT see Figure 1 0.3 4V
V
I(VRX)
input voltage on pin VRX see Figure 1 0.3 4V
V
I(VTX)
input voltage on pin VTX see Figure 1 0.3 4V
V
I(LNA_EN)
input voltage on pin LNA_EN 0.3 4V
P
i(ANT)
input power-on pin ANT high-gain receive mode - 7 dBm
bypass receive mode - 19 dBm
P
i(TX)
input power-on pin TX CW; transmit mode - 33 dBm
P
i(BT)
input power-on pin BT CW; Bluetooth mode - 22 dBm
T
amb
ambient temperature 40 85 C
T
j
junction temperature 40 150 C
T
stg
storage temperature 40 140 C
V
ESD
electrostatic discharge voltage human body model
[1]
- 2000 V
charged device model
[2]
- 500 V
Table 5. Recommended operating conditions
Symbol Parameter Conditions Min Typ Max Unit
f frequency 2400 - 2500 MHz
V
CC
supply voltage 2.7 3.3 5.25 V
V
IH
HIGH-level input voltage
[1]
1.8- 3.6V
V
IL
LOW-level input voltage 0 - +0.4 V
BGS8324 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2017. All rights reserved.
Product data sheet Rev. 4 — 18 January 2017 5 of 12
NXP Semiconductors
BGS8324
WLAN LNA + Switch
11. Thermal characteristics
12. Characteristics
[1] See Table 9 for the appropriate control signal settings.
[2] From any of three operating modes to another and from 10 % or 90 % of control signal edge to 90 % output level.
Table 6. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-a)
thermal resistance from junction to ambient 250 K/W
Table 7. DC Characteristics
V
CC
= 3.3 V; T
amb
= 25
C; 50
load, unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CC
supply current high-gain receive mode
[1]
-8.312mA
bypass receive mode
[1]
-815A
transmit mode
[1]
- 200 300 A
Bluetooth mode
[1]
-815A
standby mode
[1]
-815A
I
ctrl(LNA_EN)
control current on pin LNA_EN - 20 30 A
t
on
turn-on time
[2]
- - 500 ns
t
off
turn-off time
[2]
- - 500 ns
Table 8. RF Characteristics
V
CC
= 3.3 V; T
amb
= 25 °C; 50
load, unless otherwise specified. All measurements done on application board (decoupling
capacitor 100 nF placed near to V
CC
pin 7) with SMA connectors as reference plane.
Symbol Parameter Conditions Min Typ Max Unit
RF performance at ANT-RX path in high-gain receive mode
[1]
G
tr
transducer power gain 13.7 16 18 dB
G
p(flat)
power gain flatness peak-to-peak over any 40 MHz band - - 0.5 dB
NF noise figure -2.0-dB
P
i(1dB)
input power at 1 dB gain compression in-band - 6- dBm
IP3
i
input third-order intercept point 20 MHz tone spacing; P
i
= 20 dBm - 7 - dBm
RL
in
input return loss - 12 - dB
RL
out
output return loss - 12 - dB
RF performance at ANT-RX path in bypass receive mode
[1]
G
tr
transducer power gain 9 6 4dB
G
p(flat)
power gain flatness peak-to-peak over any 40 MHz band - - 0.5 dB
P
i(1dB)
input power at 1 dB gain compression in-band - 11.5 - dBm
IP3
i
input third-order intercept point 20 MHz tone spacing; P
i
= 3 dBm - 22.5 - dBm
RL
in
input return loss 9dB
RL
out
output return loss 14 dB
BGS8324 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2017. All rights reserved.
Product data sheet Rev. 4 — 18 January 2017 6 of 12
NXP Semiconductors
BGS8324
WLAN LNA + Switch
[1] See Table 9 for the appropriate control signal settings.
RF performance at ANT-TX path in transmit mode
[1]
ins
insertion loss - 0.8 - dB
G
p(flat)
power gain flatness peak-to-peak over any 40 MHz band - - 0.2 dB
ISL isolation measured between pin RX and pin TX 30 - - dB
P
i(1dB)
input power at 1 dB gain compression in-band - 32 - dBm
RL
in
input return loss 15 dB
RL
out
output return loss 15 dB
RF performance at ANT-BT path in Bluetooth mode
[1]
ins
insertion loss - 0.95 - dB
G
p(flat)
power gain flatness peak-to-peak over any 40 MHz band - - 0.2 dB
P
i(1dB)
input power at 1 dB gain compression in-band - 20 - dBm
RL
in
input return loss 16 dB
RL
out
output return loss 15 dB
RF performance at ANT-BT path + ANT-RX path in concurrent mode
[1]
ins
insertion loss ANT-BT path - 5 - dB
G
tr
transducer power gain ANT-RX path - 12.5 - dB
Table 8. RF Characteristics …continued
V
CC
= 3.3 V; T
amb
= 25 °C; 50
load, unless otherwise specified. All measurements done on application board (decoupling
capacitor 100 nF placed near to V
CC
pin 7) with SMA connectors as reference plane.
Symbol Parameter Conditions Min Typ Max Unit
Table 9. Control signal truth table
Other modes than the ones given in this table are not allowed.
Control signal setting Mode of operation Mode name
V
BT
V
RX
V
TX
LNA_EN SP3T switch LNA
pin 10 pin 11 pin 1 pin 6 ANT-RX ANT-TX ANT-BT
HIGH HIGH LOW HIGH ON OFF ON ON concurrent mode
LOW HIGH LOW HIGH ON OFF OFF ON high-gain receive mode
LOW HIGH LOW LOW ON OFF OFF OFF bypass receive mode
LOW LOW HIGH LOW OFF ON OFF OFF transmit mode
HIGH LOW LOW LOW OFF OFF ON OFF Bluetooth mode
LOW LOW LOW LOW OFF OFF OFF OFF standby mode
P1-P3P4-P6P7-P9P10-P12

BGS8324Z

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Manufacturer:
NXP Semiconductors
Description:
RF Amplifier BGS8324/HX2QFN12///REEL 7 Q2 NDP
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