LT6650
3
6650fa
T
C
Output Voltage Temperature ● 30 ppm/°C
Coefficient (Note 10)
∆V
DO
Dropout Voltage (Note 7) Referred to V
IN
= 1.8V, V
OUT
= 1.4V
(R
F
= 100k, R
G
= 39.2k)
∆V
OUT
= –0.1%, I
OUT
= 0µA 75 100 mV
● 150 mV
∆V
OUT
= –0.1%, I
OUT
= –200µA Sourcing 165 250 mV
● 350 mV
∆V
OUT
= –0.1%, I
OUT
= 200µA Sinking (Note 11) –300 –150 mV
● 0mV
I
SC
Short-Circuit Output Current V
OUT
Shorted to GND 5 mA
V
OUT
Shorted to V
IN
9mA
I
IN
Supply Current 5.6 11 µA
● 14 µA
V
IN
= 18V 5.9 12 µA
● 15 µA
I
FB
FB Pin Input Current V
FB
= V
OUT
= 400mV
1.2 10 nA
LT6650CS5, LT6650IS5
● 15 nA
LT6650HS5
● 30 nA
T
ON
Turn-On Time C
LOAD
= 1µF 0.5 ms
e
n
Output Noise (Note 8) 0.1Hz ≤ ƒ
≤ 10Hz 20 µV
P-P
10Hz ≤ ƒ
≤ 1KHz, I
OUT
= –200µA Sourcing 23 µV
RMS
V
HYS
Hysteresis (Note 9) ∆T = 0°C to 70°C ● 0.1 mV
● 250 ppm
∆T = –40°C to 85°C
● 0.24 mV
● 600 ppm
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: The FB pin is protected by an ESD diode to the ground. If the FB
input voltage exceeds –0.3V below ground, the FB input current should be
limited to less than 10mA. If the FB input voltage is greater than 5V, the FB
input current is expected to meet specified performance from Typical
Performance Characteristics but is not tested or QA sampled at this
voltage.
Note 3: If the part is operating at temperatures above 85°C, it is
recommended to enhance the stability margin by using an output
capacitor greater than 10µF or a series RC combination having a 100µs
equivalent time constant. See Application section for details.
Note 4: If the part is stored outside of the specified temperature range, the
output voltage may shift due to hysteresis.
Note 5: ESD (Electrostatic Discharge) sensitive devices. Extensive use of
ESD protection devices are used internal to the LT6650; however, high
electrostatic discharge can damage or degrade the device. Use proper ESD
handling precautions.
ELECTRICAL CHARACTERISTICS
The ● denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C.
V
IN
= 5V, C
IN
= 1µF, FB = OUT, no DC load, C
L
= 1µF,
unless
otherwise noted.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
Note 6: Load regulation is measured on a pulse basis from no load to the
specified load current. Output changes due to die temperature change
must be taken into account separately.
Note 7: Dropout Voltage is (V
IN
– V
OUT
) when V
OUT
falls to 0.1% below its
nominal value at V
IN
= 1.8V.
Note 8: Peak-to-Peak noise is measured with a single pole highpass filter
at 0.1Hz and a 2-pole lowpass filter at 10Hz. The unit is enclosed in a still
air environment to eliminate thermocouple effects on the leads. The test
time is 10 seconds.
Note 9: Hysteresis in the output voltage is created by package stress that
differs depending on whether the IC was previously at a higher or lower
temperature. Output voltage is always measured at 25°C, but the IC is
cycled to 85°C or –40°C before a successive measurement. Hysteresis is
roughly proportional to the square of the temperature change.
Note 10: Temperature coefficient is measured by dividing the change in
output voltage by the specified temperature range.
Note 11: This feature guarantees the shunt mode operation of the device.
