BC846BWT1G Datasheet BC847CWT1G, BC848CWT1G, BC846BWT1G | P1-P3

April, 2015 − Rev. 12

1 Publication Order Number:

BC846AWT1/D

BC846, BC847, BC848

General Purpose

Transistors

NPN Silicon

These transistors are designed for general purpose amplifier

applications. They are housed in the SC−70/SOT−323 which is

designed for low power surface mount applications.

Features

• S and NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector-Emitter Voltage

BC846

BC847

BC848

V

CEO

65

45

30

V

Collector-Base Voltage

BC846

BC847

BC848

V

CBO

80

50

30

V

Emitter-Base Voltage

BC846

BC847

BC848

V

EBO

6.0

5.0

V

Collector Current − Continuous I

C

100 mAdc

Stresses exceeding those listed in the Maximum Ratings table may damage

the device. If any of these limits are exceeded, device functionality should not

be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board,

(Note 1) T

A

= 25°C P

D

200 mW

Thermal Resistance,

Junction−to−Ambient

R

q

JA

620 °C/W

Junction and Storage Temperature T

J

, T

stg

−55 to

+150

°C

1. FR−5 = 1.0 x 0.75 x 0.062 in.

www.onsemi.com

SC−70/SOT−323

CASE 419

STYLE 3

MARKING DIAGRAM

XX = Specific Device Code

M = Month Code

G = Pb−Free Package

(Note: Microdot may be in either location)

XX MG

G

COLLECTOR

3

1

BASE

2

EMITTER

1

2

3

See detailed ordering, marking and shipping information in the

package dimensions section on page 12 of this data sheet.

ORDERING INFORMATION

BC846, BC847, BC848

www.onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage BC846 Series

(I

C

= 10 mA) BC847 Series

BC848 Series

V

(BR)CEO

65

45

30

−

V

Collector−Emitter Breakdown Voltage BC846 Series

(I

C

= 10 mA, V

EB

= 0) BC847 Series

BC848 Series

V

(BR)CES

80

50

30

−

V

Collector−Base Breakdown Voltage BC846 Series

(I

C

= 10 mA) BC847 Series

BC848 Series

V

(BR)CBO

80

50

30

−

V

Emitter−Base Breakdown Voltage BC846 Series

(I

E

= 1.0 mA) BC847 Series

BC848 Series

V

(BR)EBO

6.0

5.0

−

V

Collector Cutoff Current (V

CB

= 30 V)

(V

CB

= 30 V, T

A

= 150°C)

I

CBO

−

15

5.0

nA

mA

ON CHARACTERISTICS

DC Current Gain BC846A, BC847A, BC848A

(I

C

= 10 mA, V

CE

= 5.0 V) BC846B, BC847B, BC848B

BC847C, BC848C

(I

C

= 2.0 mA, V

CE

= 5.0 V) BC846A, BC847A, BC848A

BC846B, BC847B, BC848B

BC847C, BC848C

h

FE

−

110

200

420

90

150

270

180

290

520

−

220

450

800

−

Collector−Emitter Saturation Voltage (I

C

= 10 mA, I

B

= 0.5 mA)

Base−Emitter Saturation Voltage (I

C

= 100 mA, I

B

= 5.0 mA)

V

CE(sat)

−

0.25

0.6

V

Base−Emitter Saturation Voltage (I

C

= 10 mA, I

B

= 0.5 mA)

Base−Emitter Saturation Voltage (I

C

= 100 mA, I

B

= 5.0 mA)

V

BE(sat)

−

0.7

0.9

−

V

Base−Emitter Voltage (I

C

= 2.0 mA, V

CE

= 5.0 V)

Base−Emitter Voltage (I

C

= 10 mA, V

CE

= 5.0 V)

V

BE(on)

580

−

660

−

700

770

mV

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(I

C

= 10 mA, V

CE

= 5.0 Vdc, f = 100 MHz)

f

T

100 − − MHz

Output Capacitance (V

CB

= 10 V, f = 1.0 MHz) C

obo

− − 4.5 pF

Noise Figure (I

C

= 0.2 mA, V

CE

= 5.0 Vdc, R

S

= 2.0 kW, f = 1.0 kHz, BW = 200 Hz)

NF − − 10 dB

BC846, BC847, BC848

www.onsemi.com

3

BC846A, BC847A, BC848A

Figure 1. DC Current Gain vs. Collector

Current

Figure 2. DC Current Gain vs. Collector

Current

I

C

, COLLECTOR CURRENT (A)

I

C

, COLLECTOR CURRENT (A)

0.10.010.001

0

100

200

300

0.10.010.0010.0001

0

0.02

0.18

Figure 3. Collector Emitter Saturation Voltage

vs. Collector Current

Figure 4. Base Emitter Saturation Voltage vs.

Collector Current

I

C

, COLLECTOR CURRENT (A) I

C

, COLLECTOR CURRENT (A)

0.10.010.0010.0001

0.2

0.3

0.5

0.6

0.7

0.8

1.0

0.10.010.0010.0001

0.2

0.3

0.5

0.6

0.8

0.9

1.0

1.2

h

FE

, DC CURRENT GAIN

V

CE(sat)

, COLLECTOR−EMITTER

SATURATION VOLTAGE (V)

V

BE(sat)

, BASE−EMITTER

SATURATION VOLTAGE (V)

V

BE(on)

, BASE−EMITTER VOLTAGE (V)

1

V

CE

= 1 V

150°C

−55°C

25°C

I

C

/I

B

= 20

150°C

−55°C

25°C

0.4

0.9

I

C

/I

B

= 20

150°C

−55°C

25°C

0.4

0.7

1.1

V

CE

= 5 V

150°C

−55°C

25°C

0.04

0.06

0.08

0.10

0.12

0.14

0.16

Figure 5. Base Emitter Voltage vs. Collector

Current

I

C

, COLLECTOR CURRENT (A)

0.10.010.001

0

100

200

300

h

FE

, DC CURRENT GAIN

1

V

CE

= 5 V

150°C

−55°C

25°C

BC846BWT1G

BC846BWT1G

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