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BC846BWT1G

P1-P3P4-P6P7-P9P10-P12P13-P13
BC846, BC847, BC848
www.onsemi.com
4
BC846A, BC847A, BC848A
Figure 6. Collector Saturation Region
I
B
, BASE CURRENT (mA)
Figure 7. Base−Emitter Temperature Coefficient
I
C
, COLLECTOR CURRENT (mA)
1.6
1.2
2.0
2.8
2.4
1.2
1.6
2.0
0.02 1.0
10
0
20
0.1
0.4
0.8
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
VB
, TEMPERATURE COEFFICIENT (mV/ C)°θ
0.2 1.0
10 100
-55°C to +125°CT
A
= 25°C
I
C
= 50 mA I
C
= 100 mA
I
C
= 200 mA
I
C
=
20 mA
I
C
=
10 mA
1.0
Figure 8. Capacitances
V
R
, REVERSE VOLTAGE (VOLTS)
10
Figure 9. Current−Gain − Bandwidth Product
I
C
, COLLECTOR CURRENT (mAdc)
0.4 0.6 1.0 10 20
1.0
2.0 6.0
40
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
0.7 1.0 10 202.0
50
307.05.03.00.5
V
CE
= 10 V
T
A
= 25°C
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
T
0.8 4.0 8.0
T
A
= 25°C
C
ob
C
ib
BC846, BC847, BC848
www.onsemi.com
5
BC846B
Figure 10. DC Current Gain vs. Collector
Current
Figure 11. DC Current Gain vs. Collector
Current
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
300
400
600
0.10.010.0010.0001
0
0.15
0.30
Figure 12. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 13. Base Emitter Saturation Voltage vs.
Collector Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
1.1
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
h
FE
, DC CURRENT GAIN
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
1
V
CE
= 1 V
150°C
−55°C
25°C
I
C
/I
B
= 20
150°C
−55°C
25°C
0.4
0.9
I
C
/I
B
= 20
150°C
−55°C
25°C
0.4
0.7
1.1
V
CE
= 5 V
150°C
−55°C
25°C
500
0.25
0.20
0.05
0.10
Figure 14. Base Emitter Voltage vs. Collector
Current
I
C
, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
300
400
600
h
FE
, DC CURRENT GAIN
1
V
CE
= 5 V
150°C
−55°C
25°C
500
BC846, BC847, BC848
www.onsemi.com
6
BC846B
Figure 15. Collector Saturation Region
I
B
, BASE CURRENT (mA)
Figure 16. Base−Emitter Temperature Coefficient
I
C
, COLLECTOR CURRENT (mA)
1.0
1.2
1.6
2.0
0.02 1.0
10
0
20
0.1
0.4
0.8
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
VB
, TEMPERATURE COEFFICIENT (mV/ C)°θ
0.2 2.0
10 200
1.0
T
A
= 25°C
200 mA
50 mA
I
C
=
10 mA
0.05 0.2 0.5 2.0 5.0
100 mA
20 mA
1.4
1.8
2.2
2.6
3.0
0.5 5.0 20
50 100
-55°C to 125°C
q
VB
for V
BE
Figure 17. Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
40
Figure 18. Current−Gain − Bandwidth Product
I
C
, COLLECTOR CURRENT (mA)
0.1 0.2 1.0 50
2.0
2.0 10
100
100
200
500
50
20
20
10
6.0
4.0
1.0 10 50
100
5.0
V
CE
= 5 V
T
A
= 25°C
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT
T
0.5 5.0 20
T
A
= 25°C
C
ob
C
ib
P1-P3P4-P6P7-P9P10-P12P13-P13

BC846BWT1G

Mfr. #:
Buy BC846BWT1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 100mA 80V NPN
Lifecycle:
New from this manufacturer.
Delivery:
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