VS-ST733C08LFL1

VS-ST733CL Series
www.vishay.com
Vishay Semiconductors
Revision: 26-Aug-14
1
Document Number: 94378
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Inverter Grade Thyristors
(Hockey PUK Version), 940 A
FEATURES
Metal case with ceramic insulator
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
International standard case TO-200AC (B-PUK)
High surge current capability
Low thermal impedance
High speed performance
Designed and qualified for industrial level
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
•Inverters
Choppers
Induction heating
All types of force-commutated converters
ELECTRICAL SPECIFICATIONS
PRODUCT SUMMARY
Package TO-200AC (B-PUK)
Diode variation Single SCR
I
T(AV)
940 A
V
DRM
/V
RRM
400 V, 800 V
V
TM
1.63 V
I
TSM
at 50 Hz 20 000 A
I
TSM
at 60 Hz 20 950 A
I
GT
200 mA
T
C
/T
hs
55 °C
TO-200AC (B-PUK)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
940 A
T
hs
55 °C
I
T(RMS)
1900 A
T
hs
25 °C
I
TSM
50 Hz 20 000
A
60 Hz 20 950
I
2
t
50 Hz 2000
kA
2
s
60 Hz 1820
V
DRM
/V
RRM
400 to 800 V
t
q
Range 10 to 20 μs
T
J
-40 to +125 °C
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
V
DRM
/V
RRM
, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
VOLTAGE
V
I
DRM
/I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
VS-ST733C..L
04 400 500
75
08 800 900
VS-ST733CL Series
www.vishay.com
Vishay Semiconductors
Revision: 26-Aug-14
2
Document Number: 94378
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CURRENT CARRYING CAPABILITY
FREQUENCY UNITS
50 Hz 2200 1900 3580 3100 6800 5920
A
400 Hz 2050 1660 3600 3130 3750 3240
1000 Hz 1370 1070 2900 2450 2120 1780
2500 Hz 500 370 1220 980 960 770
Recovery voltage V
R
50 50 50
V
Voltage before turn-on V
D
V
DRM
V
DRM
V
DRM
Rise of on-state current dI/dt 50 - - A/μs
Heatsink temperature 40554055405C
Equivalent values for RC circuit 10/0.47 10/0.47 10/0.47 Ω/μF
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state
current at heatsink temperature
I
T(AV)
180° conduction, half sine wave
double side (single side) cooled
940 (350) A
55 (85) °C
Maximum RMS on-state current I
T(RMS)
DC at 25 °C heatsink temperature double side cooled 1900
A
Maximum peak, one half cycle,
non-repetitive surge current
I
TSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
20 000
t = 8.3 ms 20 950
t = 10 ms
100 % V
RRM
reapplied
16 800
t = 8.3 ms 17 600
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
2000
kA
2
s
t = 8.3 ms 1820
t = 10 ms
100 % V
RRM
reapplied
1410
t = 8.3 ms 1290
Maximum I
2
t for fusing I
2
t t = 0.1 ms to 10 ms, no voltage reapplied 20 000 kA
2
s
Maximum peak on-state voltage V
TM
I
TM
= 1700 A, T
J
= T
J
maximum,
t
p
= 10 ms sine wave pulse
1.63
V
Low level value of threshold voltage V
T(TO)1
(16.7 % x π x I
T(AV)
< I < π x I
T(AV)
), T
J
= T
J
maximum 1.09
High level value of threshold voltage V
T(TO)2
(I > π x I
T(AV)
), T
J
= T
J
maximum 1.20
Low level value of forward slope resistance r
t1
(16.7 % x π x I
T(AV)
< I < π x I
T(AV)
), T
J
= T
J
maximum 0.32
mΩ
High level value of forward slope
resistance
r
t2
(I > π x I
T(AV)
), T
J
= T
J
maximum 0.29
Maximum holding current I
H
T
J
= 25 °C, I
T
> 30 A 600
mA
Typical latching current I
L
T
J
= 25 °C, V
A
= 12 V, R
a
= 6 Ω, I
G
= 1 A 1000
180° el
I
TM
180° el
I
TM
100 µs
I
TM
VS-ST733CL Series
www.vishay.com
Vishay Semiconductors
Revision: 26-Aug-14
3
Document Number: 94378
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of rise
of turned-on current
dI/dt
T
J
= T
J
maximum, V
DRM
= Rated V
DRM
, I
TM
= 2 x dI/dt
Gate pulse: 20 V 20 Ω, 10 μs 0.5 μs rise time
1000 A/μs
Typical delay time t
d
T
J
= 25 °C, V
DM
= Rated V
DRM
, I
TM
= 50 A DC, t
p
= 1 μs
Resistive load, gate pulse: 10 V, 5 Ω source
1.5
μs
Maximum turn-off time
minimum
t
q
T
J
= T
J
maximum, I
TM
= 550 A, commutating dI/dt = 40 A/μs,
V
R
= 50 V, t
p
= 500 μs, dV/dt: see table in device code
10
maximum 20
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of off-state voltage dV/dt
T
J
= T
J
maximum, linear to 80 % V
DRM
,
higher value available on request
500 V/μs
Maximum peak reverse and off-state leakage current
I
RRM
,
I
DRM
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied 75 mA
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
GM
T
J
= T
J
maximum, f = 50 Hz, d% = 50
60
W
Maximum average gate power P
G(AV)
10
Maximum peak positive gate current I
GM
T
J
= T
J
maximum, t
p
5 ms
10 A
Maximum peak positive gate voltage +V
GM
20
V
Maximum peak negative gate voltage -V
GM
5
Maximum DC gate current required to trigger I
GT
T
J
= 25 °C, V
A
= 12 V, R
a
= 6 Ω
200 mA
Maximum DC gate voltage required to trigger V
GT
3V
Maximum DC gate current not to trigger I
GD
T
J
= T
J
maximum, rated V
DRM
applied
20 mA
Maximum DC gate voltage not to trigger V
GD
0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction temperature range T
J
-40 to +125
°C
Maximum storage temperature range T
Stg
-40 to +150
Maximum thermal resistance, junction to heatsink R
thJ-hs
DC operation single side cooled 0.073
K/W
DC operation double side cooled 0.031
Maximum thermal resistance, case to heatsink R
thC-hs
DC operation single side cooled 0.011
DC operation double side cooled 0.005
Mounting force, ± 10 %
14 700
(1500)
N
(kg)
Approximate weight 255 g
Case style See dimensions - link at the end of datasheet TO-200AC (B-PUK)

VS-ST733C08LFL1

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
SCR Modules 940 Amp 800 Volt 1900 Amp IT(RMS)
Lifecycle:
New from this manufacturer.
Delivery:
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