VS-ST733CL Series
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Vishay Semiconductors
Revision: 26-Aug-14
7
Document Number: 94378
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Fig. 15 - Frequency Characteristics
Fig. 16 - Maximum On-State Energy Power Loss Characteristics
Fig. 17 - Gate Characteristics
1E2
1E3
1E4
1E5
1E1 1E2 1E3 1E4
Pulse Basewidth (μs)
Peak On-state Current (A)
50 Hz
400
2500
100
1000
1500
200
5000
500
2000
3000
ST733C..L Series
Trapezoidal pulse
T = 40°C
di/dt = 50A/μs
C
t
p
Snubber circuit
R
S
= 10 Ω
C
S
= 0.47 μF
V
D
= 80 % V
DRM
50 Hz
400
2500
100
1000
1500
200
3000
500
2000
1E2
1E3
1E4
1E5
1E1 1E2 1E3 1E4
Pulse Basewidth (μs)
Peak On-state Current (A)
ST733C..L Series
Trapezoidal pulse
T = 55 °C
di/dt = 50A/μs
t
p
Snubber circuit
R
S
= 10 Ω
C
S
= 0.47 μF
V
D
= 80 % V
DRM
Pulse Basewidth (μs)
Peak On-state Current (A)
1E1
1E2
1E3
1E4
1E5
1E1 1E2 1E3 1E4
20 joules per pulse
2
1
0.5
10
5
3
ST733C..L Series
Sinusoidal pulse
0.4
0.3
t
p
Pulse Basewidth (μs)
Peak On-state Current (A)
1E1
1E2
1E3
1E4
1E5
1E1 1E2 1E3 1E4
20 joules per pulse
2
1
0.5
10
5
0.4
0.3
ST733C..L Series
Rectangular pulse
di/dt = 50 A/μs
t
p
3
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
(1) (2) (3)
Instantaneous Gate Current (A)
Frequency Limited by PG (AV)Device: ST733C..L Series
(4)
Instantaneous Gate Voltage (V)
T
J
= 25 °C
T
J
= 40 °C
T
J
= 125 °C
(1) PGM = 10 W, t
p
= 20 ms
(2) PGM = 20 W, t
p
= 10 ms
(3) PGM = 40 W, t
p
= 5 ms
(4) PGM = 60 W, t
p
= 3.3 ms
a) Recommended load line for
rated di/dt : 20 V, 10 Ω; t
r
<= 1 μs
Rectangular gate pulse
b) Recommended load line for
<= 30 % rated di/dt : 10 V, 10 Ω
t
r
<= 1 μs
