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2 - 7
20100831d
MWI 50-12T7T
IXYS reserves the right to change limits, test conditions and dimensions.
Output Inverter T1 - T6
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
CES
collector emitter voltage
T
VJ
= 25°C 1200 V
V
GES
V
GEM
max. DC gate voltage
max. transient collector gate voltage
continuous
transient
±20
±30
V
V
I
C25
I
C80
collector current
T
C
= 25°C
T
C
= 80°C
80
50
A
A
P
tot
total power dissipation
T
C
= 25°C 270 W
V
CE(sat)
collector emitter saturation voltage
I
C
= 50 A; V
GE
= 15 V T
VJ
= 25°C
on chip level T
VJ
= 125°C
1.7
2.0
2.15 V
V
V
GE(th)
gate emitter threshold voltage
I
C
= 2 mA; V
GE
= V
CE
T
VJ
= 25°C 5 5.8 6.5 V
I
CES
collector emitter leakage current
V
CE
= V
CES
; V
GE
= 0 V T
VJ
= 25°C
T
VJ
= 125°C 2
2 mA
mA
I
GES
gate emitter leakage current
V
GE
= ±20 V 400 nA
C
ies
input capacitance
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz 3500 pF
Q
G(on)
total gate charge
V
CE
= 600 V; V
GE
= ±15 V; I
C
= 50 A 470 nC
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load T
VJ
= 125°C
V
CE
= 600 V; I
C
= 50 A
V
GE
= ±15 V; R
G
= 18 W
L
S
= 70 nH
90
50
520
90
5
6.5
ns
ns
ns
ns
mJ
mJ
RBSOA
reverse bias safe operating area
V
GE
= ±15 V; R
G
= 18 W T
VJ
= 125°C
V
CEK
= 1150 V
100 A
SCSOA
t
SC
I
SC
short circuit safe operating area
short circuit duration
short circuit current
V
CE
= 900 V; V
GE
= ±15 V; T
VJ
= 125°C
R
G
= 18 W; non-repetitive 200
10 µs
A
R
thJC
thermal resistance junction to case
(per IGBT) 0.46 K/W
Output Inverter D1 - D6
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
RRM
max. repetitve reverse voltage
T
VJ
= 25°C 1200 V
I
F25
I
F80
forward current
T
C
= 25°C
T
C
= 80°C
85
57
A
A
V
F
forward voltage
I
F
= 60 A; V
GE
= 0 V T
VJ
= 25°C
T
VJ
= 125°C
1.95
1.95
2.2 V
V
Q
rr
I
RM
t
rr
E
rec
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
V
R
= 600 V
di
F
/dt = -1200 A/µs T
VJ
= 125°C
I
F
= 60 A; V
GE
= 0 V
8
60
350
2.5
µC
A
ns
mJ
R
thJC
thermal resistance junction to case
(per diode) 0.6 K/W
T
C
= 25°C unless otherwise stated
