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MWI50-12T7T

P1-P3P4-P6P7-P7
© 2010 IXYS All rights reserved
4 - 7
20100831d
MWI 50-12T7T
IXYS reserves the right to change limits, test conditions and dimensions.
Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code
Standard MWI 50-12T7T MWI50-12T7T Box 6 501972
Circuit Diagram
Outline Drawing Dimensions in mm (1 mm = 0.0394“)
X
0
baseplate typ. 100 µm convex
over 75 mm before mounting
20.5
±0.1
17
±0.5
7
-0.5
Ø 2.1; l=6
0.2±
0.2±
±0.1
±0.2
±0.3
Y
B
Ø 2.5
Ø 2.1
Detail Z
+0.3
Ø 6
6
1.5
Z
Detail X
0.05
±
0.02±
0.8
1.2
Detail Y
0.05±
±1°
15°
0.8
45
38.4
32
11
Ø5.5
72.7
75.7
82.3
93
107.5
3.5
-0.5
42.69
38.88
54.12
50.31
61.74
65.55
76.98
73.17
19.83
16.02
31.26
27.45
0
20.95
11.43
7.62
7.62
11.43
20.95
76.98
61.74
21 653 4 87 9 10 1211
86.1
73.17
57.93
38.88
42.69
23.64
19.83
24 212223
19
20
1718
n0.4
j
A B
A
15
14
13
27
28
16
25
26
23, 24
21, 22
19, 20
9
10
11
12
5
6
7
8
1
2
3
4
25, 26
27, 28
NTC
17
18
15, 16
13, 14
Product Marking
© 2010 IXYS All rights reserved
5 - 7
20100831d
MWI 50-12T7T
IXYS reserves the right to change limits, test conditions and dimensions.
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
0
20
40
60
80
100
0 20 40 60 80 100
0
2
4
6
8
10
12
14
I
C
[A]
V
CE
[V]
I
C
[A]
E
[mJ]
V
GE
= 15 V
4 5 6 7 8 9 10 11 12
0
20
40
60
80
100
0 1 2 3 4 5
0
20
40
60
80
100
T
VJ
= 125°C
T
VJ
= 125°C
T
VJ
= 25°C
9 V
11 V
V
CE
= 20 V
T
VJ
= 125°C
T
VJ
= 25°C
10 20 30 40 50 60 70
0
2
4
6
8
10
12
R
G
[Ω]
E
off
E
on
E
rec
I
C
[A]
V
GE
[V]
V
CE
[V]
I
C
[A]
V
GE
= 13 V
15 V
17 V
19 V
E
[mJ]
Fig. 1 Typ. outpurt characteristics
0 100 200 300 400 500 600
-15
-10
-5
0
5
10
15
20
Q
g
[nC]
V
GE
[V]
Fig. 2 Typ. outpurt characteristics
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. turn-on gate charge
Fig. 5 Typical switching losses
versus collector current impedance
Fig. 6 Typical switching losses
versus gate resistancae
I
C
= 50 A
V
CE
= 600 V
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 18 Ω
T
VJ
= 125°C
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 50 A
T
VJ
= 125°C
E
off
E
on
E
rec
Inverter T1 - T6
© 2010 IXYS All rights reserved
6 - 7
20100831d
MWI 50-12T7T
IXYS reserves the right to change limits, test conditions and dimensions.
600 700 800 900 1000 1100 1200 1300
2
4
6
8
10
12
14
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
20
40
60
80
100
120
Q
rr
[µC]
I
F
[A]
V
F
[V] di
F
/dt [A/µs]
T
VJ
= 125°C
V
R
= 600 V
30 A
60 A
120 A
F
ig. 7 Typ. Forward current versus V
F
Fig. 8 Typ. reverse recovery charge Q
rr
vs. di/dt
600 700 800 900 1000 1100 1200 1300
0
10
20
30
40
50
60
70
80
90
I
RR
[A]
di
F
/dt [A/µs]
T
VJ
= 125°C
V
R
= 600 V
120 A
30 A
60 A
Fig. 9 Typ. peak reverse current I
RM
vs. di/dt
600 700 800 900 1000 1100 1200 1300
0
100
200
300
400
500
600
700
t
rr
[ns]
di
F
/dt [A/µs]
120 A
30 A
60 A
T
VJ
= 125°C
V
R
= 600 V
Fig. 10 Typ. recovery time t
rr
versus di/dt
Fig. 11 Typ. recovery energy E
rec
versus di/dt
600 700 800 900 1000 1100 1200 1300
0.0
0.8
1.6
2.4
3.2
4.0
E
rec
[mJ]
di
F
/dt [A/µs]
T
VJ
= 125°C
V
R
= 600 V
120 A
30 A
60 A
0 10 20 30 40 50 60 70 80 90 100 110
0
2
4
6
8
10
12
Q
rr
[µC]
I
F
[A]
Fig. 12 Typ.reverse recovery charge Q
rr
versus I
F
T
VJ
= 125°C
T
VJ
= 25°C
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 18 Ω
T
VJ
= 125°C
Inverter T1 - T6
P1-P3P4-P6P7-P7

MWI50-12T7T

Mfr. #:
Buy MWI50-12T7T
Manufacturer:
Littelfuse
Description:
Discrete Semiconductor Modules 50 Amps 1200V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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