OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

NGTB40N120FL2WG

P1-P3P4-P6P7-P9P10-P10
NGTB40N120FL2WG
www.onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 7. Typical Capacitance
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
908050403020100
100000
C, CAPACITANCE (pF)
100
C
ies
C
oes
C
res
7060
T
J
= 25°C
10000
1000
100
10
1
Figure 8. Diode Forward Characteristics
V
F
, FORWARD VOLTAGE (V)
3.02.52.01.51.00.50
70
I
F
, FORWARD CURRENT (A)
T
J
= 25°C
T
J
= 150°C
60
50
40
30
20
10
0
3.5 4.0
Figure 9. Typical Gate Charge
Q
G
, GATE CHARGE (nC)
150100500
0
2
4
6
8
12
14
16
V
GE
, GATE−EMITTER VOLTAGE (V)
200
10
V
CE
= 600 V
V
CE
= 600 V
V
GE
= 15 V
I
C
= 40 A
250 300 350
Figure 10. Switching Loss vs. Temperature
T
J
, JUNCTION TEMPERATURE (°C)
140120100806040200
5
SWITCHING LOSS (mJ)
160
V
CE
= 600 V
V
GE
= 15 V
I
C
= 40 A
Rg = 10 W
E
off
E
on
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
Figure 11. Switching Time vs. Temperature
T
J
, JUNCTION TEMPERATURE (°C)
140120100806040200
100
1000
SWITCHING TIME (ns)
160
V
CE
= 600 V
V
GE
= 15 V
I
C
= 40 A
Rg = 10 W
t
r
t
d(on)
t
f
t
d(off)
10
Figure 12. Switching Loss vs. I
C
I
C
, COLLECTOR CURRENT (A)
453525155
12
SWITCHING LOSS (mJ)
V
CE
= 600 V
V
GE
= 15 V
T
J
= 150°C
Rg = 10 W
E
off
E
on
10
8
6
4
2
0
55 65 75 85
NGTB40N120FL2WG
www.onsemi.com
5
TYPICAL CHARACTERISTICS
Figure 13. Switching Time vs. I
C
I
C
, COLLECTOR CURRENT (A)
100
1000
SWITCHING TIME (ns)
V
CE
= 600 V
V
GE
= 15 V
T
J
= 150°C
Rg = 10 W
t
r
t
d(on)
t
f
t
d(off)
45352515555657585
10
Figure 14. Switching Loss vs. Rg
Rg, GATE RESISTOR (W)
453525155
SWITCHING LOSS (mJ)
14
V
CE
= 600 V
V
GE
= 15 V
T
J
= 150°C
I
C
= 40 A
E
off
55 65 75 85
E
on
12
10
8
6
4
2
0
Figure 15. Switching Time vs. Rg
Rg, GATE RESISTOR (W)
453525155
SWITCHING TIME (ns)
10000
55 65 75 85
1000
t
r
t
d(on)
t
f
t
d(off)
V
CE
= 600 V
V
GE
= 15 V
T
J
= 150°C
I
C
= 40 A
100
10
Figure 16. Switching Loss vs. V
CE
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
550500450400350
SWITCHING LOSS (mJ)
7
650 700 750 800600
E
off
V
GE
= 15 V
T
J
= 150°C
I
C
= 40 A
Rg = 10 W
6
5
4
3
2
1
0
E
on
Figure 17. Switching Time vs. V
CE
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
550500450400350 650 700 750 800600
SWITCHING TIME (ns)
1000
100
V
GE
= 15 V
T
J
= 150°C
I
C
= 40 A
Rg = 10 W
t
r
t
d(on)
t
f
t
d(off)
10
Figure 18. Safe Operating Area
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
1000100101
0.01
0.1
1
10
100
1000
50 ms
100 ms
1 ms
dc operation
Single Nonrepetitive
Pulse T
C
= 25°C
Curves must be derated
linearly with increase
in temperature
10000
NGTB40N120FL2WG
www.onsemi.com
6
TYPICAL CHARACTERISTICS
Figure 19. Reverse Bias Safe Operating Area
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
1
10
100
1000
V
GE
= 15 V, T
C
= 125°C
1000100101 10000
Figure 20. t
rr
vs. di
F
/dt (V
R
= 400 V)
di
F
/dt, DIODE CURRENT SLOPE (A/m)
13001100900700500300100
50
150
250
350
450
550
650
t
rr
, REVERSE RECOVERY TIME (ns)
T
J
= 25°C, I
F
= 40 A
T
J
= 175°C, I
F
= 40 A
Figure 21. Q
rr
vs. di
F
/dt (V
R
= 400 V)
di
F
/dt, DIODE CURRENT SLOPE (A/m)
13001100900700500300100
0
1
2
3
4
5
6
Q
rr
, REVERSE RECOVERY CHARGE (mC)
T
J
= 25°C, I
F
= 40 A
T
J
= 175°C, I
F
= 40 A
Figure 22. I
rm
vs. di
F
/dt (V
R
= 400 V)
di
F
/dt, DIODE CURRENT SLOPE (A/m)
13001100900700500300100
0
10
20
30
40
50
60
70
I
rm
, REVERSE RECOVERY CURRENT (A)
T
J
= 25°C, I
F
= 40 A
T
J
= 175°C, I
F
= 40 A
250
0.01
FREQUENCY (kHz)
Ipk (A)
0.1 1 10 100 1000
Figure 23. Collector Current vs. Switching
Frequency
T
C
= 110°C
T
C
= 80°C
V
CE
= 600 V, R
G
= 10 W, V
GE
= 0/15 V
T
C
= 80°C
200
150
100
50
0
P1-P3P4-P6P7-P9P10-P10

NGTB40N120FL2WG

Mfr. #:
Buy NGTB40N120FL2WG
Manufacturer:
ON Semiconductor
Description:
IGBT Transistors 1200V/40A FAST IGBT FSII
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet