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NGTB40N120FL2WG

P1-P3P4-P6P7-P9P10-P10
NGTB40N120FL2WG
www.onsemi.com
7
TYPICAL CHARACTERISTICS
Figure 24. IGBT Transient Thermal Impedance
ON−PULSE WIDTH (s)
10.10.010.00011E−06
1
SQUARE−WAVE PEAK R(t) (°C/W)
1E−05
50% Duty Cycle
20%
10%
5%
2%
Single Pulse
R
q
JC
= 0.28
Junction
C
1
C
2
R
1
R
2
Duty Factor = t
1
/t
2
Peak T
J
= P
DM
x Z
q
JC
+ T
C
Case
C
n
R
n
0.1
0.01
0.001
0.0001
0.001
R
i
(°C/W) C
i
(J/°C)
0.048747 0.006487
0.043252
0.051703
0.107932
0.025253
0.023120
0.061163
0.092651
1.252250
Figure 25. Diode Transient Thermal Impedance
ON−PULSE WIDTH (s)
SQUARE−WAVE PEAK R(t) (°C/W)
50% Duty Cycle
20%
10%
5%
2%
Single Pulse
0.001
0.01
0.1
1
R
q
JC
= 0.50
Junction
Case
C
1
C
2
R
1
R
2
R
n
Duty Factor = t
1
/t
2
Peak T
J
= P
DM
x Z
q
JC
+ T
C
C
n
10.10.010.00011E−06 1E−05 0.001
R
i
(°C/W) C
i
(J/°C)
0.007703 0.000130
0.010613
0.010097
0.032329
0.046791
0.044179
0.083870
0.044938
0.217376
0.000942
0.003132
0.003093
0.006758
0.022635
0.119232
0.703706
0.460033
NGTB40N120FL2WG
www.onsemi.com
8
Figure 26. Test Circuit for Switching Characteristics
Figure 27. Definition of Turn On Waveform
NGTB40N120FL2WG
www.onsemi.com
9
Figure 28. Definition of Turn Off Waveform
P1-P3P4-P6P7-P9P10-P10

NGTB40N120FL2WG

Mfr. #:
Buy NGTB40N120FL2WG
Manufacturer:
ON Semiconductor
Description:
IGBT Transistors 1200V/40A FAST IGBT FSII
Lifecycle:
New from this manufacturer.
Delivery:
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