AOT266L/AOB266L/AOTF266L
Symbol Min Typ Max Units
BV
DSS
60 V
V
DS
=60V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage
2.2 2.7 3.2 V
2.9 3.5
T
J
=125°C 4.9 5.9
g
FS
80 S
V
SD
0.65 1 V
I
S
140 A
C
iss
5650 pF
C
oss
720 pF
C
rss
20 pF
R
g
0.4 0.9 1.4 Ω
Q
g
(10V) 65 90 nC
Q
gs
20 nC
Q
gd
7 nC
t
D(on)
21 ns
t
r
20 ns
mΩ
TO220/TO220F
3.2 4
V
GS
=6V, I
D
=20A
Turn-On DelayTime
DYNAMIC PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
SWITCHING PARAMETERS
Forward Transconductance
Turn-On Rise Time
V
GS
=10V, V
DS
=30V, R
L
=1.5Ω,
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=20A
Diode Forward Voltage
Maximum Body-Diode Continuous Current
G
Input Capacitance
Output Capacitance
V
GS
=10V, V
DS
=30V, I
D
=20A
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=30V, f=1MHz
I
DSS
µA
Zero Gate Voltage Drain Current
mΩ
TO220/TO220F
V
GS
=10V, I
D
=20A
Gate-Body leakage current
V
DS
=V
GS，
I
D
=250µA
V
DS
=0V, V
GS
=±20V
R
DS(ON)
Static Drain-Source On-Resistance
2.6 3.2
V
GS
=10V, I
D
=20A
mΩ
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Drain-Source Breakdown Voltage
I
D
=250µA, V
GS
=0V
mΩ
TO263
TO263
V
GS
=6V, I
D
=20A
3 3.8
t
D(off)
36 ns
t
f
6 ns
t
rr
27 ns
Q
rr
145
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
I
F
=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time
I
F
=20A, dI/dt=500A/µs
Turn-Off DelayTime
R
GEN
=3
Turn-Off Fall Time
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°
C. Ratings are based on low frequency and duty cycles to keep initial
T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsin
maximum junction temperature of T
J(MAX)
=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
Rev.4.0: September 2013 www.aosmd.com Page 2 of 7
