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AOTF266L

P1-P3P4-P6P7-P7
AOT266L/AOB266L/AOTF266L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
40
0
2
4
6
8
10
0 10 20 30 40 50 60 70
V
GS
(Volts)
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
1000
2000
3000
4000
5000
6000
7000
8000
0 10 20 30 40 50 60
Capacitance (pF)
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
iss
100
200
300
400
500
600
0.001 0.01 0.1 1 10
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
for AOT266L and AOB266L (Note F)
10
Normalized Transient
Thermal Resistance
C
oss
C
rss
V
DS
=30V
I
D
=20A
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=175°C
T
C
=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100 1000
I
D
(Amps)
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area for AOT266L and AOB266L (Note F)
10
µ
s
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)
=175°C
T
C
=25°C
100µs
40
0.01
0.1
1
1E-05 0.0001 0.001 0.01 0.1 1 10
Z
θ
θ
θ
θJC
Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOT266L and AOB266L (Note F)
Single Pulse
T
on
T
P
D
R
θJC
=0.56°C/W
Rev.4.0: September 2013 www.aosmd.com Page 4 of 7
AOT266L/AOB266L/AOTF266L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
40
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100 1000
I
D
(Amps)
V
DS
(Volts)
Figure 12: Maximum Forward Biased Safe
Operating Area for AOTF266L (Note F)
10
µ
s
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)
=175°C
T
C
=25°C
100
µ
s
0
100
200
300
400
500
600
0.001 0.01 0.1 1 10 100 1000
Power (W)
Pulse Width (s)
Figure 13: Single Pulse Power Rating Junction-to-Case
for AOTF266L (Note F)
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000
Z
θ
θ
θ
θJC
Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF266L (Note F)
Single Pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=175°C
T
C
=25°C
R
θJC
=3.3°C/W
Rev.4.0: September 2013 www.aosmd.com Page 5 of 7
AOT266L/AOB266L/AOTF266L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
40
10
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0
50
100
150
200
250
300
0 25 50 75 100 125 150 175
Power Dissipation (W)
T
CASE
(°
°°
°C)
Figure 16: Power De-rating (Note F)
0
30
60
90
120
150
0 25 50 75 100 125 150 175
Current rating I
D
(A)
T
CASE
(°
°°
°C)
Figure 17: Current De-rating (Note F)
1
10
100
1000
0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 18: Single Pulse Power Rating Junction-to-
Ambient (Note H)
T
A
=25°C
10
100
1000
1 10 100 1000
I
AR
(A) Peak Avalanche Current
Time in avalanche, t
A
(µ
µµ
µs)
Figure 15: Single Pulse Avalanche capability
(Note C)
T
A
=25°C
T
A
=150°C
T
A
=100°C
T
A
=125°C
40
0.001
0.01
0.1
1
0.01 0.1 1 10 100 1000
Z
θ
θ
θ
θJA
Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 19: Normalized Maximum Transient Thermal Impedance (Note H)
Single Pulse
T
on
T
P
D
R
θJA
=60°C/W
Rev.4.0: September 2013 www.aosmd.com Page 6 of 7
P1-P3P4-P6P7-P7

AOTF266L

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Description:
MOSFET N-CH 60V 18A TO220F
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New from this manufacturer.
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