Expand menu
Hello, Sign in
My Account
0
Cart
Home
Products
Sensors
Semiconductors
Passive Components
Connectors
Power
Electromechanical
Optoelectronics
Circuit Protection
Integrated Circuits - ICs
Main Products
Manufacturers
Blog
Services
About OMO
About Us
Contact Us
Check Stock
SST12LP15-QVCE
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
©
2011
Silicon
Storage
Technology,
Inc.
DS75030A
10/11
10
2.4
GHz
High-Power,
High-Gain
Power
Amplifier
SST12LP15
Not
Recommended
for
New
Designs
A
Microchip T
echnology Company
Figure
8:
I
CC
vs.
P
OUT
Figure
9:
Detectors
vs.
P
OUT
Tota
l C
urre
nt
Cons
um
ption
0
50
100
150
200
250
300
350
400
51
0
1
5
2
0
2
5
3
0
P
OUT
(dBm)
I
CC
(mA)
1277
IccVSPout.0.0
De
t & De
t
_
ref
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0
5
10
15
20
25
30
P
OUT
(dBm)
Det (V)
1277
DetVSPout.0.0
©
2011
Silicon
Storage
Technology,
Inc.
DS75030A
10/11
11
2.4
GHz
High-Power,
High-Gain
Power
Amplifier
SST12LP15
Not
Recommended
for
New
Designs
A
Microchip T
echnology Company
Typical
Performance
Characteristics
Test
Conditions:
V
CC
=
3.3V,
T
A
=
25°C,
F
=
2.45
GHz,
54
Mbps
802.11g
OFDM
signal
Figure
10:
802.11g
Spectrum
at
23/24
dBm,
DC
current
240/290
mA
P
OUT
=2
3d
B
m
P
OUT
=2
4d
B
m
Mask
1277
Spectrum.0.0
Adde
d E
V
M
0
2
4
6
8
10
12
14
5
1
01
52
02
5
P
OUT
(dBm)
EVM (
%)
30
1277
AddEVM.0.0
©
2011
Silicon
Storage
Technology,
Inc.
DS75030A
10/11
12
2.4
GHz
High-Power,
High-Gain
Power
Amplifier
SST12LP15
Not
Recommended
for
New
Designs
A
Microchip T
echnology Company
Typical
Performance
Characteristics
Test
Conditions:
V
CC
=
3.3V,
T
A
=25°C,
1
Mbps
802.11B
CCK
signal
Figure
11:
802.11B
Signal
Output
Mask
at
25
dBm,
DC
current
340
mA
1277
SigOutMsk.0.0
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
SST12LP15-QVCE
Mfr. #:
Buy SST12LP15-QVCE
Manufacturer:
Microchip Technology
Description:
RF Amplifier WLAN 11b/g PA High Power
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
Paypal
Visa
MoneyGram
Western
Union
Products related to this Datasheet
SST12LP15-QVCE