©2011 Silicon Storage Technology, Inc. DS75030A 10/11
10
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP15
Not Recommended for New Designs
A
Microchip Technology Company
Figure 8: I
CC
vs. P
OUT
Figure 9: Detectors vs. P
OUT
Total Current Consumption
0
50
100
150
200
250
300
350
400
51015202530
P
OUT
(dBm)
I
CC
(mA)
1277 IccVSPout.0.0
Det & Det_ref
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0 5 10 15 20 25 30
P
OUT
(dBm)
Det (V)
1277 DetVSPout.0.0
©2011 Silicon Storage Technology, Inc. DS75030A 10/11
11
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP15
Not Recommended for New Designs
A
Microchip Technology Company
Typical Performance Characteristics
Test Conditions: V
CC
= 3.3V, T
A
= 25°C, F = 2.45 GHz, 54 Mbps 802.11g OFDM signal
Figure 10: 802.11g Spectrum at 23/24 dBm, DC current 240/290 mA
P
OUT
=23dBm
P
OUT
=24dBm
Mask
1277 Spectrum.0.0
Added EVM
0
2
4
6
8
10
12
14
5 10152025
P
OUT
(dBm)
EVM (%)
30
1277 AddEVM.0.0
©2011 Silicon Storage Technology, Inc. DS75030A 10/11
12
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP15
Not Recommended for New Designs
A
Microchip Technology Company
Typical Performance Characteristics
Test Conditions: V
CC
= 3.3V, T
A
=25°C, 1 Mbps 802.11B CCK signal
Figure 11: 802.11B Signal Output Mask at 25 dBm, DC current 340 mA
1277 SigOutMsk.0.0

SST12LP15-QVCE

Mfr. #:
Manufacturer:
Microchip Technology
Description:
RF Amplifier WLAN 11b/g PA High Power
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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