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ASMT-QABD-AEF0E

P1-P3P4-P6P7-P9P10-P11
4
Figure 2. Relative Intensity Vs. Wavelength Figure 3. Forward Current Vs. Forward Voltage.
Figure 4. Relative Intensity Vs. Forward Current Figure 5. Relative Intensity Vs. Temperature
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
380 430 480 530 580 630 680 730 780
WAVELENGTH - nm
RELATIVE INTENSITY
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50 -25 0 25 50 75 100
JUNCTION TEMPERATURE - °C
RELATIVE LUMINOUS INTENSITY
(NORMALIZED AT 25°C)
0
20
40
60
80
100
120
140
160
0 20 40 60 80 100 120 140
TEMPERATURE (°C)
CURRENT - mA
0
20
40
60
80
100
120
140
160
0 20 40 60 80 100 120 140
TEMPERATURE (°C)
CURRENT - mA
AlInGaP Amber
AlInGaP Red
AlInGaP Red
AlInGaP Amber
Rθ
JA
= 110°C/W
Rθ
JA
= 130°C/W
Rθ
JA
= 100°C/W
Rθ
JP
= 60°C/W
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0 50 100 150 200 250 300
DC FORWARD CURRENT - mA
RELATIVE LUMINOUS FLUX
(NORMALIZED AT 150 mA)
0
50
100
150
200
250
300
01234
FORWARD VOLTAGE - V
FORWARD CURRENT - mA
AlInGaP Red
AlInGaP Amber
Figure 6a. Maximum Forward Current Vs. Ambient Temperature.
Derated based on T
JMAX
= 125°C, R
J-A
=130°C/W, 110°C/W & 100°C/W.
Figure 6b. Maximum Forward Current Vs. Solder Point Temperature.
Derated based on T
JMAX
= 125°C, R
J-P
=60°C/W.
5
0.00
0.10
0.20
0.30
0.40
1.00E-05 1.00E-03 1.00E-01 1.00E+01
t
p
- Time - (S)
CURRENT - A
590.0
595.0
600.0
605.0
610.0
615.0
620.0
625.0
0 50 100 150 200 250 300
FORWARD CURRENT - mA
DOMINANT WAVELENGTH - nm
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
-50 -25 0 25 50 75 100
T
J
- JUNCTION TEMPERATURE - °C
FORWARD VOLTAGE SHIFT - V
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
-90 -60 -30 0 30 60 90
ANGULAR DISPLACEMENT - DEGREES
NORMALIZED INTENSITY
AlInGaP Red
AlInGaP Amber
AlInGaP Amber
AlInGaP Red
D =
t
p
T
t
p
I
F
T
0.00
0.10
0.20
0.30
0.40
1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00 1.00E+01 1.00E+02
tp - Time - (S)
CURRENT - A
D =
0.05
0.10
0.25
0.50
1
D =
t
p
T
t
p
I
F
T
Figure 7a. Maximum Pulse Current vs. Ambient Temperature.
Derated based on T
A
= 25°C, R
J-A
=110°C/W.
Figure 7b. Maximum Pulse Current vs. Ambient Temperature.
Derated based on T
A
= 85°C, R
J-A
=110°C/W.
Figure 8. Dominant Wavelength Vs. Forward Current - AlInGaP Devices. Figure 9. Forward Voltage Shift Vs. Temperature.
Figure 10. Radiation Pattern
6
(Acc. to J-STD-020C)
217°C
200°C
60 - 120 SEC.
6°C/SEC. MAX.
3°C/SEC. MAX.
3°C/SEC. MAX.
150°C
255 - 260°C
100 SEC. MAX.
10 - 30 SEC.
TIME
TEMPERATURE
Figure 11. Recommended Pb-free Re ow Soldering Pro le
Note: For detail information on re ow soldering of Avago surface mount
LEDs, do refer to Avago Application Note AN 1060 Surface Mounting
SMT LED Indicator Components.
Figure 12. Recommended Soldering Pad Pattern
ANODE
MARKING
0.4
0.3
MINIMUM 55 mm
2
OF ANODE PAD
FOR IMPROVED HEAT DISSIPATION
2.4
0.6
0.9 X 6
4.6
1.1
1.3 x 6
ANODE
MARKING
A
C
C C
A A
A A
SOLDER MASK
ANODE
CATHODE
CC
AA
P1-P3P4-P6P7-P9P10-P11

ASMT-QABD-AEF0E

Mfr. #:
Buy ASMT-QABD-AEF0E
Manufacturer:
Broadcom / Avago
Description:
High Power LEDs - Single Color Amber, 593nm 16.5lm, 150mA
Lifecycle:
New from this manufacturer.
Delivery:
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