RJK03M3DPA Preliminary
R07DS0767EJ0200 Rev.2.00 Page 2 of 6
Feb 12, 2013
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
(BR)DSS
30 — — V I
D
= 10 mA, V
GS
= 0
Gate to source leak current I
GSS
— — ± 0.5 A V
GS
= ±20 V, V
DS
= 0
Zero gate voltage drain current I
DSS
— — 1 A V
DS
= 24 V, V
GS
= 0
Gate to source cutoff voltage V
GS(off)
1.2 — 2.5 V V
DS
= 10 V,
I
D
= 1 mA
R
DS(on)
— 3.2 3.9 m I
D
= 20 A, V
GS
= 10 V
Note4
Static drain to source on state
resistance
R
DS(on)
— 3.9 5.1 m I
D
= 20 A, V
GS
= 4.5 V
Note4
Forward transfer admittance |y
fs
| — 90 — S I
D
= 20 A, V
DS
= 5 V
Note4
Input capacitance Ciss — 2150 3010 pF
Output capacitance Coss — 335 — pF
Reverse transfer capacitance Crss — 190 — pF
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
Gate Resistance Rg — 1.85 3.7
Total gate charge Qg — 15.7 — nC
Gate to source charge Qgs — 6.6 — nC
Gate to drain charge Qgd — 4.5 — nC
V
DD
= 10 V
V
GS
= 4.5 V
I
D
= 40 A
Turn-on delay time t
d(on)
— 4.1 — ns
Rise time t
r
— 3.0 — ns
Turn-off delay time t
d(off)
— 39.3 — ns
Fall time t
f
— 12.0 — ns
V
GS
= 10 V, I
D
= 20 A
V
DD
10 V
R
L
= 0.5
Rg = 4.7
Body–drain diode forward voltage V
DF
— 0.84 1.09 V I
F
= 40 A, V
GS
= 0
Note4
Body–drain diode reverse recovery
time
t
rr
— 8.0 — ns
I
F
=40 A, V
GS
= 0
di
F
/ dt = 500 A/ s
Notes: 4. Pulse test
