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RJK03M3DPA-00#J5A
P1-P3
P4-P6
P7-P7
RJK03M3DPA
Preliminary
R07DS0767EJ0200 Rev.2.00
Page 4 of 6
Feb 12, 2013
Case T
emperature
T
c (
°
C)
Static Drain to Source On State Resistance
vs. T
emperature
10
8
6
4
2
–25
0
25
50
75
100
125
150
0
I
D
= 5
A, 10
A, 20
A
V
GS
= 4.5 V
10 V
Pulse T
est
5
A, 10
A, 20
A
Channel T
emperature
T
ch (
°
C)
Avalanche Energy E
AS
(mJ)
Maximum
Avalanche Energy vs.
Channel T
emperature Derating
50
40
30
20
10
25
50
75
100
125
150
0
Source to Drain V
oltage V
SD
(V)
Reverse Drain Current I
DR
(A)
Reverse Drain Current vs.
Source to Drain V
oltage
50
40
30
20
10
0
0.4
0.8
1.2
1.6
2.0
Pulse T
est
5 V
V
GS
= 0, –5 V
10 V
Capacitance C (pF)
Drain to Source V
oltage V
DS
(V)
T
ypical Capacitance vs.
Drain to Source V
oltage
01
0
30
20
10000
3000
1000
300
100
30
10
V
GS
= 0
f = 1 MHz
Crss
Coss
Ciss
Gate Charge Qg (nc)
Drain to Source V
oltage V
DS
(V)
Gate to Source V
oltage V
GS
(V)
Dynamic Input Characteristics
50
40
30
20
10
0
20
16
12
8
4
10
20
30
40
50
0
0
I
D
= 40
A
V
GS
V
DS
V
DD
= 25 V
10 V
V
DD
= 25 V
10 V
RJK03M3DPA
Preliminary
R07DS0767EJ0200 Rev.2.00
Page 5 of 6
Feb 12, 2013
D. U. T
Rg
I
AP
Monitor
V
DS
Monitor
V
DD
Vin
15 V
0
I
D
V
DS
I
AP
V
(BR)DSS
L
V
DD
E
AS
= L
•
I
AP
2
•
2
1
V
DSS
V
DSS
– V
DD
Vin Monitor
D.U.T
.
Vin
10V
R
L
V
DS
= 10 V
t
r
t
d(on)
Vin
90%
90%
10%
10%
Vo
u
t
t
d(off)
Vo
u
t
Monitor
90%
10%
t
f
Rg
3
1
0.3
0.1
0.03
0.01
1 m
10 m
100 m
1
10
D = 1
0.5
0.2
0.1
0.05
0.02
1shot pulse
Pulse Width PW (S)
Normalized T
ransient Thermal Impedance vs. Pulse Width
DM
P
PW
T
D =
PW
T
Avalanche
T
est Circuit
Avalanche W
aveform
Switching T
ime T
est Circuit
Switching T
ime Waveform
0.01
RJK03M3DPA
Preliminary
R07DS0767EJ0200 Rev.2.00
Page 6 of 6
Feb 12, 2013
Package Dimensions
4.
23
T
yp
5
.
9
0
.
21
T
yp
0
.
85Max
6
.
1
1
.
27
T
yp
+
0
.
1
-
0
.
2
+
0
.
1
-
0
.
3
1
.
27
T
yp
0
.
05Max
0M
i
n
0
.
5
4
5
T
yp
Stand
-
off
5
.
1
±
0
.
2
4.
90
±
0
.
1
0
.
5
±
0
.
15
3
.
6
±
0
.
20
.
5
±
0
.
15
0
.4
2
±
0
.
08
3
.
92
±
0
.
22
⎯
PW
S
N
0008
D
E-
A
W
PA
K
(
3
F
)V
0
.
075
g
MASS
[T
y
p
.
]
R
ENE
S
A
S
C
od
e
J
EIT
A
Packa
g
e
Cod
e
Prev
i
ous
C
od
e
(Sn
p
l
at
i
ng)
N
ot
i
ce
:T
he
reverse
pattern
of
d
i
e
-
pad
support
l
ead
descr
i
bed
above
ex
i
sts
.
Un
i
t
:
mm
Packa
g
e
N
am
e
W
PA
K
(
3
F
)
Ordering Information
Orderable Part Number
Quan
tity Shipping
Container
RJK03M3DPA-00-J5A 3000
pcs
Taping
Note: The symbol of 2nd "-" is occasional
ly presented as "#".
P1-P3
P4-P6
P7-P7
RJK03M3DPA-00#J5A
Mfr. #:
Buy RJK03M3DPA-00#J5A
Manufacturer:
Renesas Electronics
Description:
MOSFET BEAM2 Series FET, 30V, WPAK, 2.0mOhm
Lifecycle:
New from this manufacturer.
Delivery:
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RJK03M3DPA-00#J5A