NCP81146MNTBG Datasheet NCP81146MNTBG | P1-P3

October, 2013 − Rev. 0

1 Publication Order Number:

NCP81146/D

NCP81146

VR12.5 Compatible

Synchronous Buck MOSFET

Drivers

The NCP81146 is a high performance dual MOSFET gate driver

optimized to drive the gates of both high−side and low−side power

MOSFETs in a synchronous buck converter. It can drive up to 3 nF

load with a 25 ns propagation delay and 20 ns transition time.

Adaptive anti−cross−conduction and power saving operation

circuit can provide a low switching loss and high efficiency solution

for notebook and desktop systems. Bidirectional EN pin can provide

a fault signal to controller when the gate driver fault detect under

OVP, UVLO occur. Also, an under−voltage lockout function

guarantees the outputs are low when supply voltage is low.

Features

• Faster Rise and Fall Times

• Adaptive Anti−Cross−Conduction Circuit

• Integrated Bootstrap Diode

• Pre OV function

• ZCD Detect

• Floating Top Driver Accommodates Boost Voltages of up to 35 V

• Output Disable Control Turns Off Both MOSFETs

• Under−voltage Lockout

• Power Saving Operation Under Light Load Conditions

• Direct Interface to NCP6151 and Other Compatible PWM

Controllers

• Thermally Enhanced Package

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Typical Applications

• Power Solutions for Desktop Systems

Device Package Shipping

†

ORDERING INFORMATION

NCP81146MNTBG DFN8

(Pb−Free)

3000 / Tape & Reel

http://onsemi.com

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

DFN8

MN SUFFIX

CASE 506AA

MARKING DIAGRAM

A4 = Specific Device Code

M = Date Code

G = Pb−Free Device

A4MG

NCP81146

http://onsemi.com

Figure 1. Pin Diagram

DRVH

GND

DRVL

BST

PWM

VCC

FLAG

(Top View)

BST

PWM

Logic

DRVH

Anti−Cross

Conduction

VCC

DRVL

VCC

Fault

UVLO

Pre−OV

ZCD

Detection

Figure 2. Block Diagram

Table 1. Pin Descriptions

Pin No. Symbol Description

1 BST Floating bootstrap supply pin for high side gate driver. Connect the bootstrap capacitor between this pin

and the SW pin.

2 PWM Control input. The PWM signal has three distinctive states: Low = Low Side FET Enabled, Mid = Diode

Emulation Enabled, High = High Side FET Enabled.

3 EN Logic input. A logic high to enable the part and a logic low to disable the part.

4 VCC Power supply input. Connect a bypass capacitor (0.1 mF) from this pin to ground.

5 DRVL Low side gate drive output. Connect to the gate of low side MOSFET.

6 GND Bias and reference ground. All signals are referenced to this node (QFN Flag).

7 SW Switch node. Connect this pin to the source of the high side MOSFET and drain of the low side MOSFET.

8 DRVH High side gate drive output. Connect to the gate of high side MOSFET.

9 FLAG Thermal flag. There is no electrical connection to the IC. Connect to ground plane.

NCP81146

http://onsemi.com

Figure 3. Application Circuit

VREG_SW1_HG

VCCP

TP3

VREG_SW1_OUT

VREG_SW1_LG

TP6

TP7

TP8

TP4

TP1

TP2

TP5

NTMFS4851N NTMFS4851N

Q9 Q10

NTMFS4821N

NCP81146

BST

PWM

VCC

GND

PAD

DRON

PWM

CSN11

CSP11

C1 C2 C3 CE9

R164

12V_POWER

R143

0.027uF

0.0

1.02

1uF

R142

0.0

2.2

2700pF

235nH

4.7uF 4.7uF 4.7uF 390uF

JP13_ETCH

JP14_ETCH

Table 2. ABSOLUTE MAXIMUM RATINGS

Pin Symbol Pin Name V

MAX

MIN

VCC Main Supply Voltage Input 15 V −0.3 V

BST Bootstrap Supply Voltage 35 V wrt/ GND

40 V ≤ 50 ns wrt/ GND

15 V wrt/ SW

−0.3 V wrt/SW

SW Switching Node

(Bootstrap Supply Return)

35 V

40 V ≤ 50 ns

−5 V

−10 V (200 ns)

DRVH High Side Driver Output BST+0.3 V −0.3 V wrt/SW

−2 V (<200 ns) wrt/SW

DRVL Low Side Driver Output VCC+0.3 V −0.3 V DC

−5 V (<200 ns)

PWM DRVH and DRVL Control Input 6.5 V −0.3 V

EN Enable Pin 6.5 V −0.3 V

GND Ground 0 V 0 V

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

Table 3. THERMAL INFORMATION (All signals referenced to AGND unless noted otherwise)

Symbol Parameter Value Unit

Thermal Characteristic (Note 1) 74 °C/W

Operating Junction Temperature Range (Note 2) −40 to +150 °C

Operating Ambient Temperature Range −40 to +125 °C

STG

Maximum Storage Temperature Range −55 to +150 °C

MSL Moisture Sensitivity Level 1

* The maximum package power dissipation must be observed.

1. I in

Cu, 1 oz thickness.

2. Operation at −40°C to −10°C guaranteed by design, not production tested.

P1-P3 P4-P6 P7-P8

NCP81146MNTBG

Mfr. #:

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Manufacturer:

ON Semiconductor

Description:

Gate Drivers MOSFET DRIVER

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