NCP81146MNTBG

NCP81146
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4
Table 4. ELECTRICAL CHARACTERISTICS (Unless otherwise stated: 40°C < T
A
< +125°C; 4.5 V < V
CC
< 13.2 V,
4.5 V < BSTSWN < 13.2 V, 4.5 V < BST < 30 V, 0 V < SWN < 21 V)
Parameter Test Conditions Min. Typ. Max. Units
SUPPLY VOLTAGE
VCC Operation Voltage
4.5 13.2 V
Power ON Reset Threshold 2.75 3.2 V
UNDERVOLTAGE LOCKOUT
VCC Start Threshold 3.8 4.35 4.5 V
VCC UVLO Hysteresis 150 200 250 mV
Output Overvoltage Trip Threshold at
Startup
Power Startup time, VCC > POR 2.1 2.25 2.4 V
SUPPLY CURRENT
Normal Mode Icc + Ibst, EN = 5 V, PWM = OSC, Fsw = 100 KHz,
Cload = 3 nF for DRVH, 3 nF for DRVL
10 mA
Standby Current Icc + Ibst, EN = GND 0.5 1.4 mA
Standby Current I
CC
+ I
BST
, EN = HIGH, PWM = LOW,
No loading on DRVH & DRVL
2.0 mA
Standby Current I
CC
+ I
BST
, EN = HIGH, PWM = HIGH,
No loading on DRVH & DRVL
2.0 mA
BOOTSTRAP DIODE
Forward Voltage V
CC
= 12 V, forward bias current = 2 mA 0.1 0.4 0.6 V
PWM INPUT
PWM Input High 3.4 V
PWM MidState 1.3 2.7 V
PWM Input Low 0.7 V
ZCD Blanking Timer 250 ns
HIGH SIDE DRIVER (VCC = 12 V)
Output Impedance, Sourcing Current VBST VSW = 12 V 1.9 3.0 W
Output Impedance, Sinking Current VBST VSW = 12 V 1.0 1.7 W
DRVH Rise Time trDRVH V
VCC
= 12 V, 3 nF load, VBSTVSW = 12 V 16 30 ns
DRVH Fall Time tfDRVH V
VCC
= 12 V, 3 nF load, VBSTVSW = 12 V 11 25 ns
DRVH TurnOff Propagation Delay
tpdl
DRVH
C
LOAD
= 3 nF 8.0 30 ns
DRVH TurnOn Propagation Delay
tpdh
DRVH
C
LOAD
= 3 nF 30 ns
SW Pull Down Resistance SW to PGND 45 kW
DRVH Pull Down Resistance DRVH to SW, BSTSW = 0 V 45 kW
HIGH SIDE DRIVER (VCC = 5 V)
Output Impedance, Sourcing Current VBST VSW = 5 V 2.5 W
Output Impedance, Sinking Current VBST VSW = 5 V 1.6 W
DRVH Rise Time tr
DRVH
V
VCC
= 5 V, 3 nF load, VBST VSW = 5 V 30 ns
DRVH Fall Time tf
DRVH
V
VCC
= 5 V, 3 nF load, VBST VSW = 5 V 27 ns
DRVH TurnOff Propagation Delay
tpdl
DRVH
C
LOAD
= 3 nF 20 ns
DRVH TurnOn Propagation Delay
tpdh
DRVH
C
LOAD
= 3 nF 27 ns
SW Pull Down Resistance SW to PGND 45 kW
NCP81146
http://onsemi.com
5
Table 4. ELECTRICAL CHARACTERISTICS (Unless otherwise stated: 40°C < T
A
< +125°C; 4.5 V < V
CC
< 13.2 V,
4.5 V < BSTSWN < 13.2 V, 4.5 V < BST < 30 V, 0 V < SWN < 21 V)
Parameter UnitsMax.Typ.Min.Test Conditions
HIGH SIDE DRIVER (VCC = 5 V)
DRVH Pull Down Resistance DRVH to SW, BSTSW = 0 V 45 kW
LOW SIDE DRIVER (VCC = 12 V)
Output Impedance, Sourcing Current 2.0 3.0 W
Output Impedance, Sinking Current 0.7 1.5 W
DRVL Rise Time tr
DRVL
C
LOAD
= 3 nF 16 35 ns
DRVL Fall Time tf
DRVL
C
LOAD
= 3 nF 11 20 ns
DRVL TurnOff Propagation Delay
tpdl
DRVL
C
LOAD
= 3 nF 35 ns
DRVL TurnOn Propagation Delay
tpdh
DRVL
C
LOAD
= 3 nF 8.0 30 ns
DRVL Pull Down Resistance DRVL to PGND, VCC = PGND 45 kW
LOW SIDE DRIVER (VCC = 5 V)
Output Impedance, Sourcing Current 2.5 W
Output Impedance, Sinking Current 1.0 W
DRVL Rise Time tr
DRVL
C
LOAD
= 3 nF 30 ns
DRVL Fall Time tf
DRVL
C
LOAD
= 3 nF 22 ns
DRVL TurnOff Propagation Delay
tpdl
DRVL
C
LOAD
= 3 nF 27 ns
DRVL TurnOn Propagation Delay
tpdh
DRVL
C
LOAD
= 3 nF 12 ns
DRVL Pull Down Resistance DRVL to PGND, VCC = PGND 45 kW
EN INPUT
Input Voltage High 2.0 V
Input Voltage Low 1.0 V
Hysteresis 500 mV
Normal Mode Bias Current 1 1 mA
Enable Pin Sink Current 4 30 mA
Propagation Delay Time 20 40 ns
SW Node
SW Node Leakage Current 20 mA
Zero Cross Detection Threshold Voltage SW to 20 mV, ramp slowly until BG goes off
(Start in DCM mode) (Note 3)
6 mV
Table 5. DECODER TRUTH TABLE
PWM INPUT ZCD DRVL DRVH
PWM High ZCD Reset Low High
PWM Mid Positive current through the inductor High Low
PWM Mid Zero current through the inductor Low Low
PWM Low ZCD Reset High Low
3. Guaranteed by design; not production tested.
NCP81146
http://onsemi.com
6
Figure 4.
Figure 5. Timing Diagram
PWM
DRVHSW
DRVL
IL
1V
1V

NCP81146MNTBG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Gate Drivers MOSFET DRIVER
Lifecycle:
New from this manufacturer.
Delivery:
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