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ZXMN3A14FTA

P1-P3P4-P6P7-P8
ZXMN3A14F
Document Number DS33536 Rev. 2 - 2
1 of 8
www.diodes.com
April 2012
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Product Line o
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Diodes Incorporated
ZXMN3A14F
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BV
DSS
Max R
DS(on)
Max I
D
T
A
= 25°C
(Note 4)
30V
65mΩ @ V
GS
= 10V
3.2A
95mΩ @ V
GS
= 4.5V
2.6A
Description and Applications
This MOSFET utilizes a unique structure that combines the benefits
of low on-resistance with fast switching speed, making it ideal for
high-efficiency power management applications.
• DC - DC converters
• Power management functions
• Disconnect switches
• Motor control
Features and Benefits
• Low on-resistance
• Fast switching speed
• Low gate charge
• Low threshold
• Totally Lead-Free & Fully RoHS compliant (Note 1)
• Halogen and Antimony Free. “Green” Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT23
• Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Copper leadframe
Solderable per MIL-STD-202, Method 208
• Weight: 0.008 grams (approximate)
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXMN3A14FTA
314 7 8 3000 Units
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
3. For more packaging details, go to our website at http://www.diodes.com.
Marking Information
Top View
Equivalent Circuit
314 = Product Type Marking Code
Top View
Pin Out
D
S
G
SOT23
314
ZXMN3A14F
Document Number DS33536 Rev. 2 - 2
2 of 8
www.diodes.com
April 2012
© Diodes Incorporated
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Product Line o
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Diodes Incorporated
ZXMN3A14F
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GS
±20 V
Continuous Drain Current
V
GS
= 10V
(Note 5)
T
A
= 70°C (Note 5)
(Note 4)
I
D
3.9
3.2
3.2
A
Pulsed Drain Current (Note 6)
I
DM
18 A
Continuous Source Current (Body Diode) (Note 5)
I
S
2.3 A
Pulsed Source Current (Body Diode) (Note 6)
I
SM
18 A
Thermal Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 4)
Linear Derating Factor
P
D
1
8
W
mW/°C
Power Dissipation (Note 5)
Linear Derating Factor
P
D
1.5
12
W
mW/°C
Thermal Resistance, Junction to Ambient (Note 4)
R
θJA
125 °C/W
Thermal Resistance, Junction to Ambient (Note 5)
R
θJA
83 °C/W
Thermal Resistance, Junction to Leads (Note 7)
R
θJL
70.44 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Notes: 4. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
5. For a device surface mounted on FR4 PCB measured at t ≤5 secs.
6. Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300μs - pulse current limited by maximum junction temperature.
7. Thermal resistance from junction to solder-point (at the end of the drain lead).
ZXMN3A14F
Document Number DS33536 Rev. 2 - 2
3 of 8
www.diodes.com
April 2012
© Diodes Incorporated
A
Product Line o
f
Diodes Incorporated
ZXMN3A14F
Thermal Characteristics
100m 1 10
10m
100m
1
10
Single Pulse
T
amb
=25°C
R
DS(on)
Limited
100µs
1ms
10ms
100ms
1s
DC
Safe Operating Area
I
D
Drain Current (A)
V
DS
Drain-Source Voltage (V)
0 20 40 60 80 100 120 140 160
0.0
0.2
0.4
0.6
0.8
1.0
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
0
50
100
T
amb
=25°C
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
100µ 1m 10m 100m 1 10 100 1k
1
10
100
Single Pulse
T
amb
=25°C
Pulse Power Dissipation
Pulse Width (s)
Maximum Power (W)
P1-P3P4-P6P7-P8

ZXMN3A14FTA

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Description:
IGBT Transistors MOSFET N Channel
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