ZXMN3A14F
Document Number DS33536 Rev. 2 - 2
4 of 8
www.diodes.com
April 2012
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ZXMN3A14F
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
30
⎯ ⎯
V
I
D
= 250μA, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
⎯ ⎯
1
μA
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯ ⎯
±100 nA
V
GS
= ±12V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS
th
1.0
⎯
2.2 V
I
D
= 250μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 8)
R
DS (ON)
⎯
48 65
mΩ
V
GS
= 10V, I
D
= 3.2A
69 95
V
GS
= 4.5V, I
D
= 2.6A
Forward Transconductance (Notes 8 and 10)
g
fs
⎯
7.1
⎯
S
V
DS
= 15V, I
D
= 3.2A
Diode Forward Voltage (Note 8)
V
SD
⎯
0.85 0.95 V
T
J
= 25°C, I
S
= 2.5A, V
GS
= 0V
Reverse Recovery Time (Note 10)
t
r
⎯
13
⎯
ns
T
J
= 25°C, I
F
= 1.6A,
di/dt = 100A/μs
Reverse Recovery Charge (Note 10)
Q
r
⎯
7
⎯
nC
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
C
iss
⎯
448
⎯
pF
V
DS
= 15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯
82
⎯
Reverse Transfer Capacitance
C
rss
⎯
49
⎯
Turn-On Delay Time (Note 9)
t
D
on
⎯
2.4
⎯
ns
V
DD
= 15V, I
D
= 1A,
R
G
≅ 6.0Ω, V
GS
= 10V
Turn-On Rise Time (Note 9)
t
⎯
2.5
⎯
Turn-Off Delay Time (Note 9)
t
D
off
⎯
13.1
⎯
Turn-Off Fall Time (Note 9)
t
f
⎯
5.3
⎯
Total Gate Charge (Note 9)
Q
⎯
8.6
⎯
nC
V
DS
=15V, V
GS
= 10V,
I
D
= 3.2A
Gate-Source Charge (Note 9)
Q
s
⎯
1.4
⎯
Gate-Drain Charge (Note 9)
Q
d
⎯
1.8
⎯
Notes: 8. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.
9. Switching characteristics are independent of operating junction temperature.
10. For design aid only, not subject to production testing.
