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LMN200B02-7

P1-P3P4-P6P7-P9P10-P10
DS30658 Rev. 7 - 2
1 of 9
www.diodes.com
LMN200B02
© Diodes Incorporated
LMN200B02
200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET
WITH GATE PULL DOWN RESISTOR
General Description
LMN200B02 is best suited for applications where the load needs to
be turned on and off using control circuits like micro-controllers,
comparators etc. particularly at a point of load. It features a
discrete pass transistor with stable V
CE(SAT)
which does not
depend on the input voltage and can support continuous maximum
current of 200 mA . It also contains a discrete N-MOSFET that can
be used as control. This N-MOSFET also has a built-in pull down
resistor at its gate. The component can be used as a part of a
circuit or as a stand alone discrete device.
Features
• Voltage Controlled Small Signal Switch
• N-MOSFET with Gate Pull-Down Resistor
• Surface Mount Package
• Ideally Suited for Automated Assembly Processes
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 8
• Ordering Information: See Page 8
• Weight: 0.006 grams (approximate)
Sub-Component P/N Reference Device Type R1 (NOM) R2 (NOM) R3 (NOM) Figure
DDTB142JU_DIE Q1 PNP Transistor 10K 470
⎯
2
DSNM6047_DIE (with Gate Pull-Down
Resistor)
Q2 N-MOSFET
⎯ ⎯
37K 2
Maximum Ratings, Total Device @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 3)
P
D
200 mW
Power Derating Factor above 125°C
P
der
1.6 mW/°C
Output Current
I
out
200 mA
Thermal Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Operating and Storage Temperature Range
T
J
,T
STG
-55 to +150 °C
Thermal Resistance, Junction to Ambient Air (Equivalent to
One Heated Junction of PNP Transistor) (Note 3)
R
θ
JA
625 °C/W
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Fig. 1: SOT-363
S
D
G
C
E
B
Q2
NMOS
R3
37K
R2
470
Q1
PNP
R1
10K
1
2
3
456
C_Q1
E_Q1 G_Q2 D_Q2
S_Q2
B_Q1
DSNM6047_DIE
DDTB142JU_DIE
Fig. 2 Schematic and Pin Configuration
1
2
3
4
5
6
DS30658 Rev. 7 - 2
2 of 9
www.diodes.com
LMN200B02
© Diodes Incorporated
Maximum Ratings:
Sub-Component Device: Pre-Biased PNP Transistor (Q1) @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
-50 V
Collector-Emitter Voltage
V
CEO
-50 V
Supply Voltage
V
CC
-50 V
Input Voltage
V
in
+5 to -6 V
Output Current
I
C
-200 mA
Sub-Component Device: N-MOSFET With Gate
Pull-Down Resistor (Q2) @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage
V
DSS
60 V
Drain Gate Voltage (R
GS
≤1M Ohm) V
DGR
60 V
Gate-Source Voltage Continuous
Pulsed (tp<50 uS)
V
GSS
+/-20
V
+/-40
Drain Current (Page 1: Note 3) Continuous (V
gs
= 10V)
Pulsed (tp <10 uS, Duty Cycle <1%)
I
D
115
mA
800
Continuous Source Current
I
S
115 mA
DS30658 Rev. 7 - 2
3 of 9
www.diodes.com
LMN200B02
© Diodes Incorporated
Electrical Characteristics: Pre-Biased PNP Transistor (Q1) @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Cut Off Current
I
CBO
⎯ ⎯
-100 nA
V
CB
= -50V, I
E
= 0
Collector-Emitter Cut Off Current
I
CEO
⎯ ⎯
-500 nA
V
CE
= -50V, I
B
= 0
Emitter-Base Cut Off Current
I
EBO
⎯
-0.5 -1 mA
V
EB
= -5V, I
C
= 0
Collector-Base Breakdown Voltage
V
(BR)CBO
-50
⎯ ⎯
V
I
C
= -10 uA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
-50
⎯ ⎯
V
I
C
= -2 mA, I
B
= 0
Input Off Voltage
V
I(OFF)
⎯
-0.55 -0.3 V
V
CE
= -5V, I
C
= -100uA
Output Voltage
V
OH
-4.9
⎯ ⎯
V
V
CC
= -5V, V
B
= -0.05V,
R
L
= 1K
Ouput Current (leakage current same as I
CEO
) I
O(OFF)
⎯ ⎯
-500 nA
V
CC
= -50V, V
I
= 0V
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯ ⎯
-0.15 V
I
C
= -10 mA, I
B
= -0.5 mA
⎯ ⎯
-0.2 V
I
C
= -50mA, I
B
= -5mA
⎯ ⎯
-0.2 V
I
C
= -20mA, I
B
= -1mA
⎯ ⎯
-0.25 V
I
C
= -100mA, I
B
= -10mA
⎯ ⎯
-0.25 V
I
C
= -200mA, I
B
= -10mA
⎯ ⎯
-0.3 V
I
C
= -200mA, I
B
= -20mA
Equivalent On-Resistance*
R
CE(SAT)
⎯ ⎯
1.5
Ω
I
C
= -200mA, I
B
= -10mA
DC Current Gain
h
FE
60 150
⎯ ⎯
V
CE
= -5V, I
C
= -20 mA
60 215
⎯ ⎯ V
CE
= -5V, I
C
= -50 mA
60 245
⎯ ⎯ V
CE
= -5V, I
C
= -100 mA
60 250
⎯ ⎯
V
CE
= -5V, I
C
= -200 mA
Input On Voltage
V
I(ON)
-2.45 -0.7
⎯
V
V
O
= -0.3V, I
C
= -2 mA
Output Voltage (equivalent to V
CE(SAT)
or
V
O(ON)
) V
OL
⎯
-0.065 -0.15 V
V
CC
= -5V, V
B
= -2.5V,
I
o
/I
I
= -50mA /-2.5mA
Input Current
I
i
⎯
-9 -28 mA
V
I
= -5V
Base-Emitter Turn-on Voltage
V
BE(ON)
⎯
-1.13 -1.3 V
V
CE
= -5V, I
C
= 200mA
Base-Emitter Saturation Voltage
V
BE(SAT)
⎯
-3.2 -3.6
V
I
C
= -50mA, I
B
= -5mA
⎯
-4.6 -5.5
I
C
= -80mA, I
B
= -8mA
Input Resistor (Base), +/- 30% R2
⎯
0.47
⎯
KΩ
⎯
Pull-up Resistor (Base to Vcc supply), +/- 30% R1
⎯
10
⎯
KΩ
⎯
Resistor Ratio (Input Resistor/Pull-up
resistor) +/- 20%
R1/R2
⎯
21
⎯ ⎯ ⎯
SMALL SIGNAL CHARACTERISTICS
Transition Frequency (Gain Bandwidth Product)
f
T
⎯
200
⎯
MHz
V
CE
= -10V, I
E
= -5mA,
f = 100MHz
Collector Capacitance, (C
cbo
-Output Capacitance)
C
C
⎯
20
⎯
pF
V
CB
= -10V, I
E
= 0A,
f = 1MHz
* Pulse Test: Pulse width, tp<300 μS, Duty Cycle, d<=0.02
P1-P3P4-P6P7-P9P10-P10

LMN200B02-7

Mfr. #:
Buy LMN200B02-7
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - Pre-Biased ARRAY TRANSISTOR SOT-363
Lifecycle:
New from this manufacturer.
Delivery:
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