DS30658 Rev. 7 - 2
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LMN200B02
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T, JUNCTION TEMPERATURE ( C)
Fig. 15
j
°
Static Drain-Source On-State Resistance
vs. Junction Temperature
R , STATIC DRAIN-SOURCE
ON-STATE RESISTANCE ( )
DS(on)
Ω
I , REVERSE DRAIN CURRENT (A)
S
0.5
11.5
2
2.5
I , REVERSE DRAIN CURRENT (A)
S
g , FORWARD TRANSCONDUCTANCE (mS)
FS
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Application Details
PNP Transistor (DDTB142JU) and N-MOSFET
(DSNM6047) with gate pull-down resistor integrated
as one in LMN200B02 can be used as a discrete
entity for general purpose applications or as an
integrated circuit to function as a Load Switch. When
it is used as the latter as shown in Fig 19, various
input voltage sources can be used as long as it does
not exceed the maximum ratings of the device.
These devices are designed to deliver continuous
output load current up to a maximum of 200 mA. The
MOSFET Switch draws no current, hence loading of
control circuit is prevented. Care must be taken for
higher levels of dissipation while designing for higher
load conditions. These devices provide high power
and also consume less space. The product mainly
helps in optimizing power usage, thereby conserving
battery life in a controlled load system like portable
battery powered applications. (Please see Fig. 20
for one example of a typical application circuit used
in conjunction with voltage regulator as a part of a
power management system)
Typical Application Circuit
Ordering Information (Note 5)
Device
Packaging Shipping
LMN200B02-7 SOT-363 3000/Tape & Reel
Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Date Code Key
Year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015
Code T U V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
PM2 = Product Type Marking Code,
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
Fig. 19 Circuit Diagram
Fig. 20
Vin
Control
D
E
S
B
G
C
Q1 PNP
Q2 NMOS
R2 470
R1
10K
R3
37K
LOAD
DDTB142JU
DSNM6047
Vout
5v Supply
Vout
Gnd
Vin
Control
U2
Voltage Regulator
IN OUT
Control Logic
Circuit (PIC,
Comparator
etc)
U1
Vin
OUT1
GND
Diodes Inc.
U3
LNM200B02
1
3
2
4
5
6
E_Q1
D_Q2
G_Q2
S_Q2
B_Q1
C_Q1
Load Switch
Point of
Load
PM2
YM
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LMN200B02
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Mechanical Details
Suggested Pad Layout
SOT-363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Typ
F 0.40 0.45
H 1.80 2.20
J 0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.22
α
0° 8°
All Dimensions in mm
Dimensions Value (in mm)
Z 2.5
G 1.3
X 0.42
Y 0.6
C1 1.9
C2 0.65
A
M
J
L
D
B C
H
K
F
X
Z
Y
C1
C2
C2
G

LMN200B02-7

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - Pre-Biased ARRAY TRANSISTOR SOT-363
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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