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IRG4PC40FDPBF

P1-P3P4-P6P7-P9P10-P10
IRG4PC40FDPbF
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Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
0
10
20
30
40
50
25 50 75 100 125 15
0
Maximum DC Collector Current (A)
T , Case Temperature (°C)
C
V = 15V
GE
1.0
1.5
2.0
2.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
CE
V , Collector-to-Emitter Voltage (V)
V = 15V
80µs PULSE WIDTH
GE
T , Junction Temperature (°C)
J
I = 54A
I = 27A
I = 14A
C
C
C
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Rectangular Pulse Duration (sec)
1
thJC
D = 0.50
0.01
0.02
0.05
0.10
0.20
SINGLE PULSE
(THERMAL RESPONSE)
Thermal Response (Z )
P
t
2
1
t
DM
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1
2
J
DM
thJC
C
IRG4PC40FDPbF
www.irf.com 5
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
Total Switchig Losses (mJ)
Total Switchig Losses (mJ)
0.1
1
10
100
-60 -40 -20 0 20 40 60 80 100 120 140 160
R = 10
Ω
V = 15V
V = 480V
A
G
GE
CC
T , Junction Temperature (°C)
J
I = 14A
I = 54A
I = 27A
C
C
C
0
4
8
12
16
20
0 20406080100120
GE
V , Gate-to-Emitter Voltage (V)
g
Q , Total Gate Charge (nC)
A
V = 400V
 I = 27A
CE
C
0
1000
2000
3000
4000
1 10 100
CE
V , Collector-to-Emitter Voltage (V)
A
C
ies
C
res
C
oes
V
GE
= 0V f = 1 MHz
Cies = Cge + Cgc + Cce SHORTED
Cres = Cce
Coes = Cce + Cgc
C , Capacitance ( pF)
3.0
3.1
3.2
3.3
0 102030405060
A
R , Gate Resistance (
Ω
)
G
V = 480V
V = 15V
T = 25°C
I = 27A
CC
GE
J
C
IRG4PC40FDPbF
6 www.irf.com
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
Total Switchig Losses (mJ)
0
2
4
6
8
10
12
0 102030405060
C
I , Collector-to-Emitter Current (A)
A
R = 10
Ω
T = 150°C
V = 480V
V = 15V
G
J
CC
GE
1
10
100
0.8 1.2 1.6 2.0 2.4
FM
F
Instantaneous Forward Current - I (A)
Forward Voltage Drop - V (V)
T = 150°C
T = 125°C
T = 25°C
J
J
J
1
10
100
1000
1 10 100 100
0
C
CE
GE
V , Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
SAFE OPERATING AREA
V = 20V
T = 125°C
GE
J
P1-P3P4-P6P7-P9P10-P10

IRG4PC40FDPBF

Mfr. #:
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Manufacturer:
Infineon Technologies
Description:
IGBT Transistors 600V Fast 1-8kHz
Lifecycle:
New from this manufacturer.
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