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IRF7335D1TR

P1-P3P4-P6P7-P9P10-P12
IRF7335D1
4 www.irf.com
Fig 11. Typical Source-Drain Diode Forward Voltage
Fig. 7. Typical Reverse Output Characteristics Fig. 8. Typical Reverse Output Characteristics
Fig 12. Typical Source-Drain Diode Forward Voltage
Q1 - Control FET
Q2 - Synchronous FET & Schottky
Typical Characteristics
Fig. 9. Typical Reverse Output Characteristics Fig. 10. Typical Reverse Output Characteristics
0.0 0.4 0.8 1.2 1.6 2.0
V
SD
Source-to-Drain Voltage (V)
0
20
40
60
80
I
D
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 7.5V
4.5V
3.5V
2.5V
2.0V
1.5V
1.0V
BOTTOM 0.0V
20µs PULSE WIDTH
Tj = 25°C
0.0 0.4 0.8 1.2 1.6 2.0
V
SD
Source-to-Drain Voltage (V)
0
20
40
60
80
I
D
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 7.5V
4.5V
3.5V
2.5V
2.0V
1.5V
1.0V
BOTTOM 0.0V
20µs PULSE WIDTH
Tj = 150°C
0.0 0.4 0.8 1.2 1.6
V
SD
, Source-toDrain Voltage (V)
0.1
1.0
10.0
100.0
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 150°C
V
GS
= 0V
0.0 0.4 0.8 1.2 1.6 2.0
V
SD
Source-to-Drain Voltage (V)
0
20
40
60
80
I
D
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 7.5V
4.5V
3.5V
2.5V
2.0V
1.5V
1.0V
BOTTOM 0.0V
20µs PULSE WIDTH
Tj = 25°C
0.0 0.4 0.8 1.2 1.6 2.0
V
SD
Source-to-Drain Voltage (V)
0
20
40
60
80
I
D
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 7.5V
4.5V
3.5V
2.5V
2.0V
1. 5V
1. 0V
BOTTOM 0.0V
20µs PULSE WIDTH
Tj = 150°C
0.0 0.4 0.8 1.2 1.6 2.0
V
SD
, Source-toDrain Voltage (V)
0.1
1.0
10.0
100.0
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 150°C
V
GS
= 0V
IRF7335D1
www.irf.com 5
Fig 13. Typical Capacitance Vs.Drain-to-Source Voltage
Fig 14. Typical Capacitance Vs.Drain-to-Source Voltage
Fig 17. Maximum Safe Operating Area
Fig. 15. Gate-to-Source Voltage vs Typical Gate Charge
Fig. 16. Gate-to-Source Voltage vs Typical Gate Charge
Fig 18. Maximum Safe Operating Area
Typical Characteristics
Q1 - Control FET Q2 - Synchronous FET & Schottky
1 10 100
V
DS
, Drain-to-Source Voltage (V)
0
500
1000
1500
2000
2500
3000
3500
4000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0.1 1.0 10.0 100.0 1000.0
V
DS
, Drain-toSource Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
100µsec
1 10 100
V
DS
, Drain-to-Source Voltage (V)
0
500
1000
1500
2000
2500
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0.1 1.0 10.0 100.0 1000.0
V
DS
, Drain-toSource Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
100µsec
0 5 10 15 20 25 30
Q
G
Total Gate Charge (nC)
0
2
4
6
8
10
12
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 24V
VDS= 15V
I
D
= 8.0A
0 5 10 15 20 25 30
Q
G
Total Gate Charge (nC)
0
2
4
6
8
10
12
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 24V
VDS= 15V
I
D
= 8.0A
IRF7335D1
6 www.irf.com
Fig 23. Typical On-Resistance Vs. Gate Voltage
Fig 21. Typical On-Resistance Vs. Drain Current Fig 22. Typical On-Resistance Vs. Drain Current
Fig 24. Typical On-Resistance Vs. Gate Voltage
Q1 - Control FET
Q2 - Synchronous FET & Schottky
Typical Characteristics
Fig 19. Normalized On-Resistance Vs. Temperature Fig 20. Normalized On-Resistance Vs. Temperature
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
4.5V
10A
0 20406080100
I
D
, Drain Current (A)
0.009
0.010
0.011
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
Ω
)
V
GS
= 4.5V
3.0 3.5 4.0 4.5
V
GS,
Gate -to -Source Voltage (V)
0.005
0.010
0.015
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
Ω
)
I
D
= 10A
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
2.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 10A
V
GS
= 4.5V
0 20 40 60 80
I
D
, Drain Current (A)
0.010
0.015
0.020
0.025
0.030
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
Ω
)
V
GS=
4.5V
2.0 4.0 6.0 8.0 10.0
V
GS,
Gate -to -Source Voltage (V)
0.00
0.01
0.02
0.03
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
Ω
)
I
D
= 10A
P1-P3P4-P6P7-P9P10-P12

IRF7335D1TR

Mfr. #:
Buy IRF7335D1TR
Manufacturer:
Infineon Technologies
Description:
MOSFET 2N-CH 30V 10A 14-SOIC
Lifecycle:
New from this manufacturer.
Delivery:
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