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IRF7335D1TR

P1-P3P4-P6P7-P9P10-P12
IRF7335D1
www.irf.com 7
Fig 25. Maximum Drain Current Vs.CaseTemperature
Fig. 28. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 27a&b. Basic Gate Charge Test Circuit
and Waveform
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
V
GS
Q
G
Q
GS
Q
GD
V
G
Charge
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
DS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
V
GS
+
-
V
DD
Fig 26a. Switching Time Test Circuit
Fig 26b. Switching Time Waveforms
25 50 75 100 125 150
T
J
, Junction Temperature (°C)
0
2
4
6
8
10
12
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100
t
1
, Rectangular Pulse Duration (sec)
0.01
0.1
1
10
100
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
A
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
IRF7335D1
8 www.irf.com
Schottky Diode Characteristics
Fig. 30 - Typical Values of
Reverse Current Vs. Reverse Voltage
Fig. 29 - Maximum Forward Voltage Drop
Characteristics
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Forward Voltage Drop - V
F
( V )
0.1
1
10
100
I
n
s
t
a
n
t
a
n
e
o
u
s
F
o
r
w
a
r
d
C
u
r
r
e
n
t
-
I
F
(
A
)
T
J
= 150°C
T
J
= 125°C
T
J
= 25°C
0 5 10 15 20 25 30
Reverse Voltage - V
R
(V)
0.1
1
10
100
1000
10000
100000
R
e
v
e
r
s
e
C
u
r
r
e
n
t
-
I
R
(
µ
A
)
125°C
100°C
Tj = 150°C
75°C
50°C
25°C
IRF7335D1
www.irf.com 9
Fig. 31 Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET
®
Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple ≤ 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P. W .
Period
* V
GS
= 5V for Logic Level Devices
*
+
+
+
-
-
-
R
G
V
DD
• dv/dt controlled by R
G
• Driver same type as D.U.T.
• I
SD
controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Fig. 32 Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2 Qgd Qgodr
P1-P3P4-P6P7-P9P10-P12

IRF7335D1TR

Mfr. #:
Buy IRF7335D1TR
Manufacturer:
Infineon Technologies
Description:
MOSFET 2N-CH 30V 10A 14-SOIC
Lifecycle:
New from this manufacturer.
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