MMG3015NT1
1
RF Device Data
Freescale Semiconductor, Inc.
MMG3015NT1
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
Broadband High Linearity Amplifier
The MMG3015NT1 is a general purpose amplifier that is internally input
and output matched. It is designed for a broad range of Class A, small --
signal, high linearity, general purpos e applications. It is suitable for
applications with frequenc ies from 0 to 6000 MHz such as cellular, PCS,
BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small--signal RF.
Features
Frequency: 0--6000 MHz
P1dB: 20.5 dBm @ 900 MHz
Small--Signal Gain: 15.5 dB @ 900 MHz
Third Order Output Intercept Point: 36 dBm @ 900 MHz
Single 5 V Supply
Active Bias Control
Internally Matched to 50 Ohms
Cost--effective SOT--89 Surface Mount Plastic Package
In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.
0--6000 MHz, 15.5 dB
20.5 dBm
InGaP HBT GPA
SOT--89
Table 1. Typical Performance
(1)
Characteristic Symbol
900
MHz
2140
MHz
3500
MHz
Unit
Small--Signal Gain
(S21)
G
p
15.5 14.5 12.5 dB
Input Return Loss
(S11)
IRL -- 1 5 -- 1 9 -- 1 9 dB
Output Return Loss
(S22)
ORL -- 1 3 -- 9 -- 7 dB
Power Output @1dB
Compression
P1dB 20.5 20.5 18.5 dBm
Third Order Output
Intercept Point
OIP3 36 33.5 30.5 dBm
1. V
CC
=5Vdc,T
A
=25C, 50 ohm system.
Table 2. Maximum Ratings
Rating Symbol Value Unit
Supply Voltage V
CC
7 V
Supply Current I
CC
300 mA
RF Input Power P
in
12 dBm
Storage Temperature Range T
stg
--65 to +150 C
Junction Temperature T
J
175 C
Table 3. Thermal Characteristics
Characteristic Symbol Value
(2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 95C, 5 Vdc, 95 mA, no RF applied
R
JC
41.5 C/W
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MMG3015NT1
Rev. 4, 9/2014
Freescale Semiconductor
Technical Data
Freescale Semiconductor, Inc., 2007--2008, 2012, 2014.
ll rights reserved.
