4
RF Device Data
Freescale Semiconductor, Inc.
MMG3015NT1
50 OHM TYPICAL CHARACTERISTICS
33
38
4.8
V
CC
, COLLECTOR VOLTAGE (V)
Figure 8. Third Order Output Intercept Point
versus Collector Voltage
37
36
35
34
OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
4.9 5 5.25.1
f = 900 MHz
1 MHz Tone Spacing
100-- 4 0 -- 2 0 0 2 0 4 0 6 0 8 0
33
38
T, TEMPERATURE (_C)
Figure 9. Third Order Output Intercept Point
versus Case Temperature
36
35
34
OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
Figure 10. Third Order Intermodulation Distortion
versus Output Power
P
out
, OUTPUT POWER (dBm)
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
51015
-- 7 0
-- 2 0
-- 5 0
-- 6 0
-- 4 0
150
10
3
10
5
120
Figure 11. MTTF versus Junction Temperature
10
4
125 130 135 140 145
T
J
, JUNCTION TEMPERATURE (C)
NOTE: The MTTF is calculated with V
CC
=5Vdc,I
CC
=95mA
MTTF (YEARS)
4
0
8
0
f, FREQUENCY (GHz)
Figure 12. Noise Figure versus Frequency
6
4
2
123
NF, NOISE FIGURE (dB)
-- 7 0
-- 2 0
4
P
out
, OUTPUT POWER (dBm)
Figure 13. Single--Carrier W--CDMA Adjacent
Channel Power Ratio versus Output Power
-- 3 0
-- 4 0
-- 5 0
-- 6 0
1614128
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
20
37
10
V
CC
=5Vdc
f = 900 MHz
1 MHz Tone Spacing
20
-- 3 0
6218
V
CC
= 5 Vdc, f = 2140 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 8.5 dB @
0.01% Probability(CCDF)
V
CC
=5Vdc
V
CC
=5Vdc
f = 900 MHz
1 MHz Tone Spacing
