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IPD70P04P409ATMA1

P1-P3P4-P6P7-P9
IPD70P04P4-09
OptiMOS
®
-P2 Power-Transistor
Features
• P-channel - Normal Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
T
C
=25°C,
V
GS
=-10V
-73 A
T
C
=100°C,
V
GS
=-10V
1)
-52
Pulsed drain current
1)
I
D,pulse
T
C
=25°C
-292
Avalanche energy, single pulse
1)
E
AS
I
D
=-36A
24 mJ
Avalanche current, single pulse
I
AS
- -73 A
Gate source voltage
V
GS
- ±20 V
Power dissipation
P
tot
T
C
=25 °C
75 W
Operating and storage temperature
T
j
, T
stg
- -55 ... +175 °C
IEC climatic category; DIN IEC 68-1 - - 55/175/56
Value
V
DS
-40 V
R
DS(on)
8.9
mΩ
I
D
-73 A
Product Summary
PG-TO252-3-313
Type Package Marking
IPD70P04P4-09 PG-TO252-3-313 4P0409
Rev. 1.0 page 1 2010-05-26
IPD70P04P4-09
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
1)
Thermal resistance, junction - case
R
thJC
- - - 2 K/W
SMD version, device on PCB
R
thJA
minimal footprint - - 62
6 cm
2
cooling area
2)
--40
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0V, I
D
= -1mA
-40 - - V
Gate threshold voltage
-V
GS(th)
V
DS
=V
GS
, I
D
=-120µA
2.0 3.0 4.0
Zero gate voltage drain current
I
DSS
V
DS
=-32V, V
GS
=0V,
T
j
=25°C
- -0.04 -1 µA
V
DS
=-32V, V
GS
=0V,
T
j
=125°C
2)
- -20 -200
Gate-source leakage current
I
GSS
V
GS
=-20V, V
DS
=0V
- - -100 nA
Drain-source on-state resistance
R
DS(on)
V
GS
=-10V, I
D
=-70A
- 6.4 8.9
mΩ
Values
Rev. 1.0 page 2 2010-05-26
IPD70P04P4-09
Parameter Symbol Conditions Unit
min. typ. max.
D
y
namic characteristics
1)
Input capacitance
C
iss
- 3700 4810 pF
Output capacitance
C
oss
- 1400 1820
Reverse transfer capacitance
C
rss
-4080
Turn-on delay time
t
d(on)
-19-ns
Rise time
t
r
-12-
Turn-off delay time
t
d(off)
-24-
Fall time
t
f
-31-
Gate Char
g
e Characteristics
1)
Gate to source charge
Q
gs
-2026nC
Gate to drain charge
Q
gd
-1020
Gate charge total
Q
g
-5470
Gate plateau voltage
V
plateau
- -5.4 - V
Reverse Diode
Diode continous forward current
1)
I
S
- - -73 A
Diode pulse current
1)
I
S,pulse
- - -292
Diode forward voltage
V
SD
V
GS
=0V, I
F
=-70A,
T
j
=25°C
- -1 -1.3 V
Reverse recovery time
1)
t
rr
-50-ns
Reverse recovery charge
1)
Q
rr
-50-nC
T
C
=25°C
Values
V
GS
=0V, V
DS
=-25V,
f =1MHz
V
DD
=-20V,
V
GS
=-10V, I
D
=-73A,
R
G
=3.5Ω
V
DD
=-32V, I
D
=-70A,
V
GS
=0 to -10V
V
R
=-20V, I
F
=-50A,
di
F
/dt =-100A/µs
1)
Defined by design. Not subject to production test.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0 page 3 2010-05-26
P1-P3P4-P6P7-P9

IPD70P04P409ATMA1

Mfr. #:
Buy IPD70P04P409ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET P-CHANNEL
Lifecycle:
New from this manufacturer.
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