IPD70P04P409ATMA1

IPD70P04P4-09
13 Typ. gate charge 14 Gate charge waveforms
V
GS
= f(Q
gate
); I
D
= -73 A pulsed
parameter: V
DD
V
GS
Q
gate
Q
gs
Q
gd
Q
g
V
GS
Q
gate
Q
gs
Q
gd
Q
g
-8V
-32V
0
2
4
6
8
10
12
0 102030405060
Q
gate
[nC]
-V
GS
[V]
Rev. 1.0 page 7 2010-05-26
IPD70P04P4-09
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2010
All Rights Reserved.
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or characteristics. With respect to any examples or hints given herein, any typical values stated
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disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
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For further information on technology, delivery terms and conditions and prices, please contact
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For information on the types in question, please contact the nearest Infineon Technologies Office.
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If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0 page 8 2010-05-26
IPD70P04P4-09
Revision History
Version
1.0
Date
21.05.2010
Changes
Final Data Sheet
Rev. 1.0 page 9 2010-05-26

IPD70P04P409ATMA1

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET P-CHANNEL
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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