October 2009 Doc ID 5505 Rev 10 1/13
13
BAT54
Small signal Schottky diodes
Features
Low conduction and reverse losses
Negligible switching losses
Low forward and reverse recovery times
Extremely fast switching
Surface mount device
Low capacitance diode
Description
The BAT54 series uses 40 V Schottky barrier
diodes packaged in SOD- 23, SOD-323,
SOD-523, SOT-23, SOT-323, or SOT-666.
Table 1. Device summary
Symbol Value
I
F
300 mA
V
RRM
40 V
C
(typ) 7 pF
T
j
(max) 150 °C
SOD-323
SOD-123
SOD-523
SOT-23
SOT-666
BAT54JFILM
(Single)
BAT54JFILM-H
BAT54ZFILM
(Single)
BAT54KFILM
(Single)
BAT54FILM
(Single)
BAT54SFILM
(Series)
BAT54CFILM
(Common cathode)
BAT54WFILM
(Single)
BAT54CWFILM
(Common cathode)
BAT54AWFILM
(Common anode)
BAT54SWFILM
(Series)
BAT54-07P6FILM
(2 parallel diodes)
BAT54-09P6FILM
(2 opposite diodes)
BAT54AFILM
(Common anode)
SOT-323
Configurations in top view
www.st.com
Characteristics BAT54
2/13 Doc ID 5505 Rev 10
1 Characteristics
Table 2. Absolute ratings (limiting values at Tj = 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 40 V
I
F
Continuous forward current 300 mA
I
FSM
Surge non repetitive forward current t
p
= 10 ms Sinusoidal 1 A
T
stg
Storage temperature range -65 to +150 °C
T
j
Operating junction temperature range -40 to +150 °C
T
L
Maximum soldering temperature 260 °C
Table 3. Thermal parameters
Symbol Parameter Value Unit
R
th(j-a)
Junction to ambient
(1)
1. Epoxy printed circuit board with recommended pad layout
SOT-23, SOD-123 500
°C/W
SOT-323, SOD-323, 550
SOD-523, SOT-666 600
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
1. Pulse test: t
p
= 5 ms, δ < 2 %
Reverse leakage current
T
j
= 25 °C
V
R
= 30 V
1
µA
T
j
= 100 °C 100
V
F
(2)
2. Pulse test: t
p
= 380 µs, δ < 2 %
Forward voltage drop T
j
= 25 °C
I
F
= 0.1 mA 240
mV
I
F
= 1 mA 320
I
F
= 10 mA 400
I
F
= 30 mA 500
I
F
= 100 mA 900
Table 5. Dynamic characteristics
Symbol Parameter
Test conditions
Min. Typ. Max. Unit
C
Diode
capacitance
V
R
= 1 V, F = 1 MHz 7 10 pF
t
rr
Reverse
recovery time
I
F
= 10 mA, I
R
= 10 mA, T
j
= 25 °C
I
rr
= 1 mA, R
L
= 100 Ω
5ns
BAT54 Characteristics
Doc ID 5505 Rev 10 3/13
Figure 1. Average forward power dissipation
versus average forward current
Figure 2. Average forward current versus
ambient temperature (δ = 1)
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35
P(W)
δ=0.05
δ=0.2
δ=0.1
δ=0.5
δ=1
T
δ
=tp/T
tp
I
F(AV)
(A)
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0 25 50 75 100 125 150
I
F(AV)
(A)
T
δ
=tp/T
tp
T
amb
(°C)
Figure 3. Reverse leakage current versus
reverse applied voltage
(typical values)
Figure 4. Reverse leakage current versus
junction temperature
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
0 5 10 15 20 25 30
I
R
(µA)
T
j
=100°C
T
j
=25°C
T
j
=50°C
V
R
(V)
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
0 25 50 75 100 125 150
I
R
[T
j
]/I
R
[T
j
=25°C]
V
R
=3V
T
j
(°C)
Figure 5. Junction capacitance versus
reverse applied voltage
(typical values)
Figure 6. Forward voltage drop versus
forward current (typical values)
1
10
1 10 100
C(pF)
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
V
R
(V)
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
I
FM
(A)
T
j
=50°CT
j
=50°C
T
j
=25°CT
j
=25°C
T
j
=-40 °CT
j
=-40 °C
T
j
=100°CT
j
=100°C
V
FM
(V)

BAT54-09P6FILM

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
DIODE ARRAY SCHOTTKY 40V SOT666
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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