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AFT23H201-24SR6

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
AFT23H201--24SR6
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 45 W asymmetrical Doherty RF power LDMOS transistor is designed for
cellular base station applications covering the frequency range of 2300 to
2400 MHz.
2300 MHz
Typical Doherty Single--Carrier W--CDMA Performance: V
DD
=28Vdc,
I
DQA
= 500 mA, V
GSB
=0.8Vdc,P
out
= 45 W Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
G
ps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
2300 MHz 15.6 46.2 8.1 –28.9
2350 MHz 15.9 46.5 8.1 –30.4
2400 MHz 16.1 45.3 8.0 –33.9
Features
Advanced High Performance In--Package Doherty
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
Document Number: AFT23H201--24S
Rev. 0, 7/2016
Freescale Semiconductor
Technical Data
2300–2400 MHz, 45 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTOR
AFT23H201--24SR6
ACP--1230S--4L2L
Figure 1. Pin Connections
(Top View)
RF
outA
/V
DSA
RF
outB
/V
DSB
RF
inA
/V
GSA
RF
inB
/V
GSB
VBW
A
(1)
VBW
B
(1)
6
3
15
24
Carrier
Peaking
1. Device cannot operate with V
DD
current
supplied through pin 3 and pin 6.
Freescale Semiconductor, Inc., 2016. All rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
AFT23H201--24SR6
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage V
DSS
–0.5, +65 Vdc
Gate--Source Voltage V
GS
–6.0, +10 Vdc
Operating Voltage V
DD
32, +0 Vdc
Storage Temperature Range T
stg
–65 to +150 C
Case Operating Temperature Range T
C
–40 to +150 C
Operating Junction Temperature Range
(1,2)
T
J
–40 to +225 C
Table 2. Thermal Characteristics
Characteristic Symbol Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 75C, 45 W Avg., W--CDMA, 28 Vdc, I
DQA
= 500 mA, V
GSB
=0.8Vdc,
2350 MHz
R
JC
0.27 C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2
Machine Model (per EIA/JESD22--A115) B
Charge Device Model (per JESD22--C101) III
Table 4. Electrical Characteristics (T
A
=25C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Off Characteristics
(4)
Zero Gate Voltage Drain Leakage Current
(V
DS
=65Vdc,V
GS
=0Vdc)
I
DSS
— — 10 Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
=32Vdc,V
GS
=0Vdc)
I
DSS
— — 1 Adc
Gate--Source Leakage Current
(V
GS
=5Vdc,V
DS
=0Vdc)
I
GSS
— — 1 Adc
On Characteristics -- Side A, Carrier
Gate Threshold Voltage
(V
DS
=10Vdc,I
D
= 140 Adc)
V
GS(th)
0.8 1.2 1.6 Vdc
Gate Quiescent Voltage
(V
DD
=28Vdc,I
D
= 500 mAdc, Measured in Functional Test)
V
GSA(Q)
1.4 1.8 2.2 Vdc
Drain--Source On--Voltage
(V
GS
=10Vdc,I
D
=1.4Adc)
V
DS(on)
0.1 0.14 0.4 Vdc
On Characteristics -- Side B, Peaking
Gate Threshold Voltage
(V
DS
=10Vdc,I
D
= 200 Adc)
V
GS(th)
0.8 1.2 1.6 Vdc
Drain--Source On--Voltage
(V
GS
=10Vdc,I
D
=2Adc)
V
DS(on)
0.1 0.14 0.4 Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com/RF/calculators
.
3. Refer to AN1955 , Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF
and search for AN1955.
4. Each side of device measured separately.
(continued)
AFT23H201--24SR6
3
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics
(T
A
=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Functional Tests
(1,2)
(In Freescale Doherty Test Fixture, 50 ohm system) V
DD
=28Vdc,I
DQA
= 500 mA, V
GSB
=0.8Vdc,P
out
=45WAvg.,
f = 2300 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in
3.84 MHz Channel Bandwidth @ 5MHzOffset.
Power Gain
G
ps
14.6 15.6 17.6 dB
Drain Efficiency
D
44.0 46.2 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 7.6 8.1 — dB
Adjacent Channel Power Ratio ACPR — –28.9 –26.5 dBc
Load Mismatch
(2)
(In Freescale Doherty Test Fixture, 50 ohm system) I
DQA
= 500 mA, V
GSB
= 0.8 Vdc, f = 2350 MHz, 12 sec(on),
10% Duty Cycle
VSWR 10:1 at 32 Vdc, 350 W Pulsed CW Output Power
(3 dB Input Overdrive from 200 W Pulsed CW Rated Power)
No Device Degradation
Typical Performance (In Freescale Doherty Test Fixture, 50 ohm system) V
DD
=28Vdc,I
DQA
= 500 mA, V
GSB
=0.8Vdc,
2300–2400 MHz Bandwidth
P
out
@ 1 dB Compression Point, CW P1dB — 210 — W
P
out
@ 3 dB Compression Point
(3)
P3dB — 290 — W
AM/PM
(Maximum value measured at the P3dB compression point across
the 2300–2400 MHz frequency range)
— –10.4 —
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBW
res
— 110 — MHz
Gain Flatness in 100 MHz Bandwidth @ P
out
=45WAvg. G
F
— 0.5 — dB
Gain Variation over Temperature
(–30Cto+85C)
G — 0.006 — dB/C
Output Power Variation over Temperature
(–30Cto+85C)
P1dB — 0.003 — dB/C
Table 5. Ordering Information
Device Tape and Reel Information Package
AFT23H201--24SR6 R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel ACP--1230S--4L2L
1. Part internally matched both on input and output.
2. Measurements made with device in an asymmetrical Doherty configuration.
3. P3dB = P
avg
+ 7.0 dB where P
avg
is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

AFT23H201-24SR6

Mfr. #:
Buy AFT23H201-24SR6
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors AIRFAST RF POWER LDMOS TRANSISTOR 2300-2400 MHz, 45 W AVG., 28 V
Lifecycle:
New from this manufacturer.
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