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AFT23H201-24SR6

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
4
RF Device Data
Freescale Semiconductor, Inc.
AFT23H201--24SR6
Figure 2. A FT23H201--24SR6 Test Circuit Component Layout
AFT23H201--24S
C2
C1
C4
C3
C5
C6
C8
C13
C9
C10
C11
C12
C14
C15
C17
C16
R2
R3
R1
Z1
D77178
C7
C18
Rev. 0
V
DDA
V
GGA
V
GGB
V
DDB
CUT OUT AREA
C
P
Z1
Table 6. AFT23H201--24SR6 Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C2, C3, C5, C10, C13, C15 6.2 pF Chip Capacitors ATC100B6R2CT500XT ATC
C4,C6,C9,C11,C14,C16 10 F Chip Capacitors C5750X7S2A106M230KB TDK
C7, C8 0.3 pF Chip Capacitors ATC100B0R3CT500XT ATC
C12 5.1 pF Chip Capacitor ATC100B5R1CT500XT ATC
C17, C18 470 F, 63 V Electrolytic Capacitors MCGPR63V477M1326 Multicomp
R1 50 , 4 W Chip Resistor CW12010T0050GBK ATC
R2, R3 2.7 , 1/4 W Chip Resistors CRCW12062R7FKEA Vishay
Z1 2300–2700 MHz Band, 90, 2 dB Hybrid Coupler X3C25P1-02S Anaren
PCB Rogers RO4350B, 0.020,
r
=3.66 D77178 MTL
AFT23H201--24SR6
5
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 2300–2400 MHz
2290
ACPR
f, FREQUENCY (MHz)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ P
out
= 45 Watts Avg.
15.4
16.4
16.3
16.2
–33
47.5
47
46.5
46
–28
–29
–30
–31
D
, DRAIN
EFFICIENCY (%)
D
G
ps
, POWER GAIN (dB)
16.1
16
15.9
15.8
15.7
15.6
15.5
2305 2320 2335 2350 2365 2380 2395 2410
45.5
–32
ACPR (dBc)
PARC
PARC (dB)
–1.95
–1.75
–1.8
–1.85
–2
G
ps
–1.9
V
DD
=28Vdc,P
out
=45W(Avg.),I
DQA
= 500 mA, V
GSB
=0.8Vdc
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
TWO--TONE SP ACING (MHz)
10
–60
–20
–30
–50
0 100
IMD, INTERMODULATION DISTORTION (dBc)
–40
IM5--U
IM5--L
IM7--L
IM7--U
IM3--L
200
IM3--U
V
DD
=28Vdc,P
out
= 18.8 W (PEP), I
DQA
= 500 mA
V
GSB
= 0.8 Vdc, T wo--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2350 MHz
–10
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
P
out
, OUTPUT POWER (WATTS)
–1
–3
25
0
–2
–4
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
5
45 65 105
0
60
50
40
30
20
10
D
DRAIN EFFICIENCY (%)
–1 dB = 33 W
85
D
ACPR
PARC
ACPR (dBc)
–45
–15
–20
–25
–35
–30
–40
20
G
ps
, POWER GAIN (dB)
19
18
17
16
15
14
G
ps
–3 dB = 65 W
–2 dB = 48 W
–5
1
V
DD
=28Vdc,I
DQA
= 500 mA, f = 2350 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
6
RF Device Data
Freescale Semiconductor, Inc.
AFT23H201--24SR6
TYPICAL CHARACTERISTICS — 2300–2400 MHz
ACPR
1
G
ps
P
out
, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
–20
–30
8
20
0
60
50
40
30
20
D
, DRAIN EFFICIENCY (%)
D
G
ps
, POWER GAIN (dB)
18
16
10 100 200
10
ACPR (dBc)
14
12
10
–10
–40
–50
–60
Figure 7. B roadband Frequency Response
11
17
f, FREQUENCY (MHz)
V
DD
=28Vdc
P
in
=0dBm
I
DQA
= 500 mA
V
GSB
=0.8Vdc
15
14
13
GAIN (dB)
16
12
2000 2100 2200 2300 2400 2500 2600 2700 2800
Gain
2300 MHz
V
DD
=28Vdc,I
DQA
= 500 mA, V
GSB
=0.8Vdc
Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
2350 MHz
2400 MHz
2300 MHz
2350 MHz
2400 MHz
2300 MHz
0
2350 MHz
2400 MHz
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

AFT23H201-24SR6

Mfr. #:
Buy AFT23H201-24SR6
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors AIRFAST RF POWER LDMOS TRANSISTOR 2300-2400 MHz, 45 W AVG., 28 V
Lifecycle:
New from this manufacturer.
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