SIUD402ED-T1-GE3 Datasheet SIUD402ED-T1-GE3 | P1-P3

SiUD402ED

www.vishay.com

Vishay Siliconix

S15-1129-Rev. A, 18-May-15

1

Document Number: 62968

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

N-Channel 20 V (D-S) MOSFET

Marking Code: C

Ordering Information:

SiUD402ED-T1-GE3 (Lead (Pb)-free and halogen-free)

FEATURES

• TrenchFET

®

power MOSFET

• Ultra small 0.8 mm x 0.6 mm outline

• Ultra thin 0.4 mm max. height

• 100 % R

g

tested

• Typical ESD protection 2000 V (HBM)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

•Load switch

• High speed switching

•DC/DC converters

• For smart phones, tablet PCs and

mobile computing

• Small signal switching

Notes

a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.

b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.

c. Refer to IPC/JEDEC

®

(J-STD-020), no manual or hand soldering.

d. Maximum under steady state conditions is 135 °C/W.

e. Maximum under steady state conditions is 400 °C/W.

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(Ω) Max. I

D

(A)

a

Q

g

(Typ.)

20

0.73 at V

GS

= 4.5 V 1

0.5 nC

0.87 at V

GS

= 2.5 V 0.92

1.10 at V

GS

= 1.8 V 0.82

1.80 at V

GS

= 1.5 V 0.64

PowerPAK

®

0806 Single

Top View Bottom View

1

G

2

S

D

3

1

0.8 mm

0.6 mm

1

6mm

0.8 mm

0.4 mm

N-Channel MOSFET

S

D

G

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C, unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage V

DS

20

V

Gate-Source Voltage V

GS

± 8

Continuous Drain Current (T

J

= 150 °C)

T

A

= 25 °C

I

D

1

a

A

T

A

= 70 °C 0.8

a

T

A

= 25 °C 0.35

b

T

A

= 70 °C 0.28

b

Pulsed Drain Current (t = 100 μs) I

DM

1.4

Continuous Source-Drain Diode Current

T

A

= 25 °C

I

S

1

a

T

A

= 25 °C 0.37

b

Maximum Power Dissipation

T

A

= 25 °C

P

D

1.25

a

W

T

A

= 70 °C 0.8

a

T

A

= 25 °C 0.37

b

T

A

= 70 °C 0.24

b

Operating Junction and Storage Temperature Range T

J

, T

stg

-55 to +150

°C

Soldering Recommendations (Peak Temperature)

c

260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a, d

t ≤ 5 s R

thJA

80 100

°C/W

Maximum Junction-to-Ambient

b, e

265 335

SiUD402ED

www.vishay.com

Vishay Siliconix

S15-1129-Rev. A, 18-May-15

2

Document Number: 62968

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

c. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage V

DS

V

GS

= 0 V, I

D

= 250 μA 20 - - V

V

DS

Temperature Coefficient ΔV

DS

/T

J

I

D

= 250 μA

-18-

mV/°C

V

GS(th)

Temperature Coefficient ΔV

GS(th)

/T

J

--1.9-

Gate-Source Threshold Voltage V

GS(th)

V

DS

= V

GS

, I

D

= 250 μA 0.4 - 0.9 V

Gate-Source Leakage I

GSS

V

DS

= 0 V, V

GS

= ± 4.5 V - - ± 0.5

μA

V

DS

= 0 V, V

GS

= ± 8 V - - ± 10

Zero Gate Voltage Drain Current I

DSS

V

DS

= 20 V, V

GS

= 0 V - - 1

V

DS

= 20 V, V

GS

= 0 V, T

J

= 55 °C - - 10

On-State Drain Current

a

I

D(on)

V

DS

≥ 5 V, V

GS

= 4.5 V 1 - - A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= 4.5 V, I

D

= 0.2 A - 0.57 0.73

Ω

V

GS

= 2.5 V, I

D

= 0.1 A - 0.67 0.87

V

GS

= 1.8 V, I

D

= 0.02 A - 0.80 1.10

V

GS

= 1.5 V, I

D

= 0.01 A - 0.90 1.80

Forward Transconductance

a

g

fs

V

DS

= 10 V, I

D

= 0.2 A - 1.2 - S

Dynamic

b

Input Capacitance C

iss

V

DS

= 10 V, V

GS

= 0 V, f = 1 MHz

-16-

pFOutput Capacitance C

oss

-7.5-

Reverse Transfer Capacitance C

rss

-3.5-

Total Gate Charge Q

g

V

DS

= 10 V, V

GS

= 8 V, I

D

= 0.2 A - 0.75 1.20

nC

V

DS

= 10 V, V

GS

= 4.5 V, I

D

= 0.2 A

- 0.50 0.75

Gate-Source Charge Q

gs

-0.09-

Gate-Drain Charge Q

gd

-0.09-

Gate Resistance R

g

f = 1 MHz 3 24 50 Ω

Turn-On Delay Time t

d(on)

V

DD

= 10 V, R

L

= 50 Ω

I

D

≅ 0.2 A, V

GEN

= 4.5 V, Rg = 1 Ω

-715

ns

Rise Time t

r

-1020

Turn-Off Delay Time t

d(off)

-2350

Fall Time t

f

-715

Turn-On Delay Time t

d(on)

V

DD

= 10 V, R

L

= 15 Ω

I

D

≅ 0.2 A, V

GEN

= 8 V, R

g

= 1 Ω

-510

Rise Time t

r

-510

Turn-Off Delay Time t

d(off)

-1125

Fall Time t

f

-510

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

S

T

C

= 25 °C - - 1

c

A

Pulse Diode Forward Current I

SM

--1.4

Body Diode Voltage V

SD

I

S

= 0.2 A, V

GS

= 0 V - 0.8 1.2 V

Body Diode Reverse Recovery Time t

rr

I

F

= 0.2 A, dI/dt = 100 A/μs, T

J

= 25 °C

-1125ns

Body Diode Reverse Recovery Charge Q

rr

-3.57nC

Reverse Recovery Fall Time t

a

-5.3-

ns

Reverse Recovery Rise Time t

b

-5.7-

SiUD402ED

www.vishay.com

Vishay Siliconix

S15-1129-Rev. A, 18-May-15

3

Document Number: 62968

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted

Gate Current vs. Gate-Source Voltage

Output Characteristics

On-Resistance vs. Drain Current

Gate Current vs. Gate-Source Voltage

Transfer Characteristics

Capacitance vs. Drain-to-Source Voltage

0

0.2

0.4

0.6

0.8

1.0

1.2

02468101214

I

GSS

- Gate Current (mA)

V

GS

- Gate-Source Voltage (V)

T

J

= 25 °C

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0.0 0.5 1.0 1.5 2.0 2.5 3.0

I

D

- Drain Current (A)

V

DS

-Drain-to-Source Voltage (V)

V

GS

= 2 V

V

GS

= 1 V

V

GS

= 5 V thru 2.5 V

V

GS

= 1.5 V

0

0.4

0.8

1.2

1.6

2.0

0.00.20.40.60.81.01.21.4

R

DS(on)

-On-Resistance (Ω)

I

D

- Drain Current (A)

V

GS

= 1.5 V

V

GS

= 1.8 V

V

GS

= 2.5 V

V

GS

= 4.5 V

10

-2

10

-3

10

-4

10

-5

10

-6

10

-7

10

-8

10

-1

0 2 4 6 8 10 12 14

I

GSS

- Gate Current (A)

V

GS

- Gate-to-Source Voltage (V)

T

J

= 150 °C

T

J

= 25 °C

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.40

0.0 0.3 0.6 0.9 1.2 1.5

I

D

- Drain Current (A)

V

GS

- Gate-to-Source Voltage (V)

T

C

= 25 °C

T

C

= 125 °C

T

C

= - 55 °C

0

5

10

15

20

25

0 4 8 12 16 20

C - Capacitance (pF)

V

DS

-Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

SIUD402ED-T1-GE3

SIUD402ED-T1-GE3

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