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SIUD402ED-T1-GE3

P1-P3P4-P6P7-P8
SiUD402ED
www.vishay.com
Vishay Siliconix
S15-1129-Rev. A, 18-May-15
4
Document Number: 62968
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Gate Charge
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
Threshold Voltage
0
2
4
6
8
0.0 0.2 0.4 0.6 0.8
V
GS
- Gate-to-Source Voltage (V)
Q
g
-Total Gate Charge (nC)
V
DS
= 16 V
V
DS
= 10 V
V
DS
= 5 V
I
D
= 0.2 A
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 25 50 75 100 125 150
R
DS(on)
-On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
V
GS
= 4.5 V, I
D
= 0.2 A
V
GS
= 2.5 V, I
D
= 0.2 A
V
GS
= 1.8 V, 1.5 V,
I
D
= 0.02 A
0
0.4
0.8
1.2
1.6
2.0
012345
R
DS(on)
-On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 125 °C
T
J
= 25 °C
I
D
= 0.2 A
0.01
0.1
1
10
0.00.20.40.60.81.01.2
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
0.2
0.3
0.4
0.5
0.6
- 50 - 25 0 25 50 75 100 125 150
V
GS(th)
(V)
T
J
-Temperature (°C)
I
D
= 250 μA
SiUD402ED
www.vishay.com
Vishay Siliconix
S15-1129-Rev. A, 18-May-15
5
Document Number: 62968
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Safe Operating Area (Junction-to-Ambient)
a
Current Derating
a, b
Single Pulse Power, Junction-to-Ambient
a
Power Derating
a
Note
a. When mounted on 1" x 1" FR4 with full copper.
b. The power dissipation P
D
is based on T
J
(max.) = 150 °C, using junction-to-ambient thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below
the package limit.
0.01
0.1
1
10
0.1 1 10 100
I
D
- Drain Current (A)
V
DS
-Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
IDM LimitedIDM Limited
100 ms, 1 s, 10 s
IDM Limited
R
DS(on)
Limited*
T
A
= 25 °C
BVDSS Limited
10 ms
DC
I
D(on)
Limited
100 μs
1 ms
0.0
0.2
0.4
0.6
0.8
1.0
0 25 50 75 100 125 150
I
D
- Drain Current (A)
T
A
- Ambient Temperature (°C)
Package Limited
0.0
1.0
2.0
3.0
4.0
0.0001 0.001 0.01 0.1 1 10 100 1000
Power (W)
Time (s)
0
0.2
0.4
0.6
0.8
1.0
1.2
0 255075100125150
Power (W)
T
A
- Ambient Temperature (°C)
SiUD402ED
www.vishay.com
Vishay Siliconix
S15-1129-Rev. A, 18-May-15
6
Document Number: 62968
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 board with maximum copper)
Normalized Thermal Transient Impedance, Junction-to-Ambient (on 1" x 1" FR4 board with minimum copper)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62968
.
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base=R
thJA
= 135 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base=R
thJA
= 400 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
P1-P3P4-P6P7-P8

SIUD402ED-T1-GE3

Mfr. #:
Buy SIUD402ED-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 20V Vds 8V Vgs PowerPAK 0806
Lifecycle:
New from this manufacturer.
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