BAV99_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 8 — 18 November 2010 6 of 14
NXP Semiconductors
BAV99 series
High-speed switching diodes
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
(1) I
R
=1mA
Input signal: reverse pulse rise time t
r
= 0.6 ns; reverse voltage pulse duration t
p
= 100 ns; duty cycle δ =0.05
Oscilloscope: rise time t
r
=0.35ns
Fig 5. Reverse recovery time test circuit and waveforms
Input signal: forward pulse rise time t
r
= 20 ns; forward current pulse duration t
p
≥ 100 ns; duty cycle δ≤0.005
Fig 6. Forward recovery voltage test circuit and waveforms
t
rr
(1)
+ I
F
t
output signal
t
r
t
p
t
10 %
90 %
V
R
input signal
V = V
R
+
I
F
×
R
S
R
S
= 50 Ω
I
F
D.U.T.
R
i
= 50 Ω
SAMPLING
OSCILLOSCOPE
mga881
t
r
t
t
p
10 %
90 %
I
input signal
R
S
= 50 Ω
I
R
i
= 50 Ω
OSCILLOSCOPE
1 kΩ 450 Ω
D.U.T.
mga88
V
FR
t
output signal
V
