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SI8823EDB-T2-E1

P1-P3P4-P6P7-P7
Si8823EDB
www.vishay.com
Vishay Siliconix
S16-1562-Rev. A, 08-Aug-16
1
Document Number: 76852
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P-Channel 20 V (D-S) MOSFET
FEATURES
• TrenchFET
®
Gen III p-channel power MOSFET
• Compact 0.8 mm x 0.8 mm outline area
• Low 0.4 mm max. profile
•R
DS(on)
rating at V
GS
= -1.5 V
• Typical ESD protection: 1900 V HBM
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
•Load switch
• Power management in battery-
operated, mobile, and wearable
devices
Notes
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
c. Refer to IPC / JEDEC
®
(J-STD-020), no manual or hand soldering.
d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump.
e. Based on T
A
= 25 °C.
f. Maximum under steady state conditions is 185 °C/W.
g. Maximum under steady state conditions is 330 °C/W.
PRODUCT SUMMARY
V
DS
(V) -20
R
DS(on)
max. () at V
GS
= -4.5 V 0.095
R
DS(on)
max. () at V
GS
= -2.5 V 0.120
R
DS(on)
max. () at V
GS
= -1.8 V 0.200
R
DS(on)
max. () at V
GS
= -1.5 V 0.335
Q
g
typ. (nC) 6.6
I
D
(A) -2.7
a
Configuration Single
MICRO FOOT
®
0.8 x 0.8
Backside View
1
0.8 mm
0.8 mm
xxx
xx
Bump Side View
1
G
4
D
S
3
S
2
1
G
4
S
3
2
S
G
D
P-Channel MOSFET
ORDERING INFORMATION
Package MICRO FOOT
Lead (Pb)-free and halogen-free Si8823EDB-T2-E1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage V
DS
-20
V
Gate-source voltage V
GS
± 8
Continuous drain current (T
J
= 150 °C)
T
A
= 25 °C
I
D
-2.7
a
A
T
A
= 70 °C -2.1
a
T
A
= 25 °C -1.9
b
T
A
= 70 °C -1.5
b
Pulsed drain current (t = 100 μs) I
DM
-15
Continuous source-drain diode current
T
A
= 25 °C
I
S
-0.7
a
T
A
= 70 °C -0.4
b
Maximum power dissipation
T
A
= 25 °C
P
D
0.9
a
W
T
A
= 70 °C 0.6
a
T
A
= 25 °C 0.5
b
T
A
= 70 °C 0.3
b
Operating junction and storage temperature range T
J
, T
stg
-55 to +150
°C
Package reflow conditions
c
VPR
260
IR / convection
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient
a, f
t 5 s R
thJA
105 135
°C/W
Maximum junction-to-ambient
b, g
200 260
Si8823EDB
www.vishay.com
Vishay Siliconix
S16-1562-Rev. A, 08-Aug-16
2
Document Number: 76852
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V
DS
V
GS
= 0 V, I
D
= -250 μA -20 - - V
V
DS
temperature coefficient V
DS
/T
J
I
D
= -250 μA
- -12.5 -
mV/°C
V
GS(th)
temperature coefficient V
GS(th)
/T
J
-2.3-
Gate-source threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= -250 μA -0.4 - -0.8 V
Gate-source leakage I
GSS
V
DS
= 0 V, V
GS
= ± 4.5 V - - ± 0.5
μA
V
DS
= 0 V, V
GS
= ± 8 V - - ± 5
Zero gate voltage drain current I
DSS
V
DS
= -20 V, V
GS
= 0 V - - -1
V
DS
= -20 V, V
GS
= 0 V, T
J
= 55 °C - - -10
On-state drain current
a
I
D(on)
V
DS
-5 V, V
GS
= -4.5 V -5 - - A
Drain-source on-state resistance
a
R
DS(on)
V
GS
= -4.5 V, I
D
= -1 A - 0.077 0.095
V
GS
= -2.5 V, I
D
= -1 A - 0.100 0.120
V
GS
= -1.8 V, I
D
= -0.5 A - 0.137 0.185
V
GS
= -1.5 V, I
D
= -0.5 A - 0.200 0.335
Forward transconductance
a
g
fs
V
DS
= -5 V, I
D
= -1 A - 6 - S
Dynamic
b
Input capacitance C
iss
V
DS
= -10 V, V
GS
= 0 V, f = 1 MHz
- 580 -
pFOutput capacitance C
oss
- 165 -
Reverse transfer capacitance C
rss
-75-
Total gate charge Q
g
V
DS
= -10 V, V
GS
= -8 V, I
D
= -1 A - 11 17
nC
V
DS
= -10 V, V
GS
= -4.5 V, I
D
= -1 A - 6.6 10
Gate-source charge Q
gs
V
DS
= -10 V, V
GS
= -4.5 V, I
D
= -1 A
-1-
Gate-drain charge Q
gd
-1.5-
Gate resistance R
g
f = 1 MHz - 20 -
Turn-on delay time t
d(on)
V
DD
= -10 V, R
L
= 10 , I
D
-1 A,
V
GEN
= -4.5 V, R
g
= 1
-1630
ns
Rise time t
r
-3060
Turn-off delay time t
d(off)
- 60 120
Fall time t
f
-4080
Turn-on delay time t
d(on)
V
DD
= -10 V, R
L
= 10 , I
D
-1 A,
V
GEN
= -8 V, R
g
= 1
-715
Rise time t
r
-2040
Turn-off delay time t
d(off)
- 75 150
Fall time t
f
-3570
Drain-Source Body Diode Characteristics
Continuous source-drain diode current I
S
T
A
= 25 °C - - -0.7
A
Pulse diode forward current I
SM
---15
Body diode voltage V
SD
I
S
= -1 A, V
GS
= 0 V - -0.8 -1.2 V
Body diode reverse recovery time t
rr
I
F
= -1 A, dI/dt = 100 A/μs, T
J
= 25 °C
-2040ns
Body diode reverse recovery charge Q
rr
- 7 15 nC
Reverse recovery fall time t
a
- 12.5 -
ns
Reverse recovery rise time t
b
-7.5-
Si8823EDB
www.vishay.com
Vishay Siliconix
S16-1562-Rev. A, 08-Aug-16
3
Document Number: 76852
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Gate-Current vs. Gate-Source Voltage
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate-Current vs. Gate-Source Voltage
Transfer Characteristics
Capacitance
10
100
1000
10000
0
3
6
9
12
15
0 0.5 1 1.5 2
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
2nd line
V
GS
= 5 V thru 2.5 V
V
GS
= 1 V
V
GS
= 1.5 V
V
GS
= 2 V
10
100
1000
10000
0
0.1
0.2
0.3
0.4
0.5
03691215
Axis Title
2nd line
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
2nd line
V
GS
= 1.5 V
V
GS
= 4.5 V
V
GS
= 2.5 V
V
GS
= 1.8 V
10
100
1000
10000
10
-10
10
-9
10
-8
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
03691215
Axis Title
1st line
2nd line
2nd line
I
GSS
- Gate Current (A)
V
GS
- Gate-to-Source Voltage (V)
2nd line
T
J
= 150 °C
T
J
= 25 °C
10
100
1000
10000
0
3
6
9
12
15
0 0.5 1 1.5 2 2.5 3
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
2nd line
T
C
= 25 °C
T
C
=-55 °C
T
C
= 125 °C
10
100
1000
10000
0
200
400
600
800
1000
0 4 8 12 16 20
Axis Title
1st line
2nd line
2nd line
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
2nd line
C
rss
C
oss
C
iss
P1-P3P4-P6P7-P7

SI8823EDB-T2-E1

Mfr. #:
Buy SI8823EDB-T2-E1
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -20V Vds 8V Vgs MICRO FOOT
Lifecycle:
New from this manufacturer.
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