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SI8823EDB-T2-E1

P1-P3P4-P6P7-P7
Si8823EDB
www.vishay.com
Vishay Siliconix
S16-1562-Rev. A, 08-Aug-16
4
Document Number: 76852
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Gate Charge
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
10
100
1000
10000
0
2
4
6
8
024681012
Axis Title
1st line
2nd line
2nd line
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
2nd line
V
DS
= 10 V
V
DS
= 16 V
V
DS
= 5 V
I
D
= 1 A
10
100
1000
10000
0.1
1
10
0 0.2 0.4 0.6 0.8 1.0 1.2
Axis Title
1st line
2nd line
2nd line
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
2nd line
T
J
= 150 °C
T
J
= 25 °C
10
100
1000
10000
0.30
0.40
0.50
0.60
0.70
0.80
0.90
-50-25 0 255075100125150
Axis Title
1st line
2nd line
2nd line
V
GS(th)
(V)
T
J
- Temperature (°C)
2nd line
I
D
= 250 µA
10
100
1000
10000
0.8
0.9
1.0
1.1
1.2
1.3
1.4
-50 -25 0 25 50 75 100 125 150
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
2nd line
V
GS
= 1.5 V, I
D
= 0.5 A
V
GS
= 1.8 V, I
D
= 0.5 A
V
GS
= 2.5 V, I
D
= 1 A
V
GS
= 4.5 V, I
D
= 1 A
10
100
1000
10000
0
0.04
0.08
0.12
0.16
0.20
012345
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
2nd line
T
J
= 25 °C
T
J
= 125 °C
I
D
= 1 A
0
2
4
6
8
10
12
14
Power (W)
Time (s)
10 100 10000.110.0100.10
Si8823EDB
www.vishay.com
Vishay Siliconix
S16-1562-Rev. A, 08-Aug-16
5
Document Number: 76852
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Current Derating
a
Power, Junction-to-Ambient Safe Operating Area, Junction-to-Ambient
Note
a. The power dissipation P
D
is based on T
J
max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
10
100
1000
10000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0255075100125150
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
T
A
- Ambient Temperature (°C)
2nd line
0.0
0.2
0.4
0.6
0.8
25 50 75 100 125 150
T
A
- Ambient Temperature (°C)
Power Dissipation (W)
10
100
1000
10000
0.01
0.1
1
10
100
0.1 1 10 100
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
(1)
V
GS
> minimum V
GS
at which R
DS(on)
is specified
Limited by R
DS(on)
(1)
T
A
= 25 °C
Single pulse
10 s, 1 s, 100 ms
10 ms
1 ms
100 µs
DC
I
D(ON)
limited
BVDSS limited
I
DM
limited
Si8823EDB
www.vishay.com
Vishay Siliconix
S16-1562-Rev. A, 08-Aug-16
6
Document Number: 76852
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient (on 1" x 1" FR4 board with maximum copper)
Normalized Thermal Transient Impedance, Junction-to-Ambient (on 1" x 1" FR4 board with minimum copper)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?76852
.
110.0100.0
10
10000.10.0001 100
0.2
0.1
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
t
1
t
2
Notes:
P
DM
1. Duty cycle, D =
2. Per unit base = R
thJA
= 185 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
4. Surface mounted
Duty cycle = 0.5
Single pulse
0.02
0.05
110.0100.0
10
10000.10.0001 100
0.2
0.1
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Duty cycle=0.5
Single pulse
0.02
0.05
t
1
t
2
Notes:
P
DM
1. Duty cycle, D =
2. Per unit base = R
thJA
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
4. Surface mounted
= 330 °C/W
P1-P3P4-P6P7-P7

SI8823EDB-T2-E1

Mfr. #:
Buy SI8823EDB-T2-E1
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -20V Vds 8V Vgs MICRO FOOT
Lifecycle:
New from this manufacturer.
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