IRL530NSTRL

P1-P3 P4-P6 P7-P9 P10-P11

IRL530NS/L

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

0

3

6

9

12

15

0 1020304050

Q , Total Gate Char

g

e

(

nC

)

G

V , Gate-to-Source Voltage (V)

GS

V = 80V

V = 50V

V = 20V

DS

DS

DS

A

FOR TEST CIRCUIT

SEE FIGURE 13

I = 9.0A

D

1

10

100

0.4 0.6 0.8 1.0 1.2 1.4

T = 25°C

J

V = 0V

GS

V , Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

SD

SD

A

T = 175°C

J

1

10

100

1000

1 10 100 1000

V , Drain-to-Source Volta

g

e

(

V

)

DS

I , Drain Current (A)

OPERATION IN THIS AREA LIMITED

BY R

D

DS(on)

10µs

100µs

1ms

10ms

A

T = 25°C

T = 175°C

Sin

g

le Pulse

C

J

0

200

400

600

800

1000

1200

1400

1 10 100

C, Capacitance (pF)

DS

V , Drain-to-Source Volta

g

e

(

V

)

A

V = 0V, f = 1MHz

C = C + C , C SHORTED

C = C

C = C + C

GS

iss gs gd ds

rss gd

oss ds gd

C

iss

C

oss

C

rss

IRL530NS/L

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

J DM thJC C

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

1

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10a. Switching Time Test Circuit

V

DS

90%

10%

V

GS

t

d(on)

t

r

t

d(off)

t

f

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

V

DS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

R

D

V

GS

R

G

D.U.T.

5.0V

+

-

V

DD

25 50 75 100 125 150 175

0

5

10

15

20

T , Case Temperature ( C)

I , Drain Current (A)

°

C

D

IRL530NS/L

Fig 12a. Unclamped Inductive Test Circuit

Fig 12b. Unclamped Inductive Waveforms

V

DS

L

D.U.T.

V

DD

I

AS

t

p

0.01Ω

R

G

+

-

t

p

V

DS

I

AS

V

DD

V

(BR)DSS

5.0 V

Q

G

Q

GS

Q

GD

V

G

Charge

Fig 13a. Basic Gate Charge Waveform

D.U.T.

V

DS

I

D

I

G

3mA

V

GS

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 13b. Gate Charge Test Circuit

5.0 V

0

50

100

150

200

250

300

350

25 50 75 100 125 150 175

J

E , Single Pulse Avalanche Energy (mJ)

AS

A

Startin

g

T , Junction Temperature

(

°C

)

V = 25V

I

TOP 3.7A

6.4A

BOTTOM 9.0A

DD

D

P1-P3 P4-P6 P7-P9 P10-P11

IRL530NSTRL

Mfr. #:

Buy IRL530NSTRL

Manufacturer:

Infineon Technologies

Description:

MOSFET N-CH 100V 17A D2PAK

Lifecycle:

New from this manufacturer.

Delivery:

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